Low light sensor onsemi MICROFC-10020-SMT-TR1 silicon photomultiplier with high

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Measurement Type	Light Intensity
Operating Temperature	-40℃~+85℃
Description	DFN-4(1.5x1.8) Photodiodes RoHS
Mfr. Part #	MICROFC-10020-SMT-TR1
Package	DFN-4(1.5x1.8)
Model Number	MICROFC-10020-SMT-TR1

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Product Details
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Product Specification


Measurement Type	Light Intensity	Operating Temperature	-40℃~+85℃
Description	DFN-4(1.5x1.8) Photodiodes RoHS	Mfr. Part #	MICROFC-10020-SMT-TR1
Package	DFN-4(1.5x1.8)	Model Number	MICROFC-10020-SMT-TR1

Product Overview

The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-light sensors designed for high-gain, single-photon sensitivity across the UV-to-visible spectrum. They offer performance comparable to conventional PMTs with the practical advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. These sensors feature an industry-leading low dark-count rate and high Photon Detection Efficiency (PDE). For ultrafast timing applications, the C-Series sensors provide a fast output with a rise time as low as 300 ps and a pulse width of 600 ps. They are available in various sensor sizes (1 mm, 3 mm, and 6 mm) and are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering processes. Recommended for users requiring plug-and-play evaluation with optimum timing performance is the SMA Biasing Board (MicroFC-SMA-XXXXX), while the SMT Pin Adapter (MicroFC-SMTPA-XXXXX) offers a quick evaluation method without specialized soldering.

Product Attributes

Brand: ON Semiconductor
Origin: Semiconductor Components Industries, LLC
Package Type: 4-side tileable surface mount (SMT)
Soldering Compatibility: Lead-free, reflow soldering processes
Certifications: MSL 3 for tape & reel quantities; MSL 4 for tape only qty.

Technical Specifications

Sensor Size	Microcell Size	Parameter	Overvoltage	Min.	Typ.	Max.	Units
1 mm	10 , 20 , 35	Breakdown Voltage (Vbr)		24.2	24.7		V
3 mm	20 , 35 , 50	Breakdown Voltage (Vbr)					V
6 mm	35	Breakdown Voltage (Vbr)					V
1 mm	10 , 20 , 35	Recommended overvoltage Range		1.0		5.0	V
3 mm	20 , 35 , 50	Recommended overvoltage Range					V
6 mm	35	Recommended overvoltage Range					V
1 mm	10 , 20 , 35	Spectral Range		300		950	nm
3 mm	20 , 35 , 50	Spectral Range					nm
6 mm	35	Spectral Range					nm
1 mm	10 , 20 , 35	Peak Wavelength ( p)			420		nm
3 mm	20 , 35 , 50	Peak Wavelength ( p)					nm
6 mm	35	Peak Wavelength ( p)					nm
1 mm	10	PDE at p	Vbr + 2.5 V	14			%
1 mm	20	PDE at p	Vbr + 2.5 V		24		%
1 mm	35	PDE at p	Vbr + 2.5 V		31		%
1 mm	10	PDE at p	Vbr + 5.0 V	18			%
1 mm	20	PDE at p	Vbr + 5.0 V		31		%
1 mm	35	PDE at p	Vbr + 5.0 V		41		%
3 mm	20	PDE at p	Vbr + 2.5 V	24			%
3 mm	35	PDE at p	Vbr + 2.5 V		31		%
3 mm	50	PDE at p	Vbr + 2.5 V		35		%
3 mm	20	PDE at p	Vbr + 5.0 V	31			%
3 mm	35	PDE at p	Vbr + 5.0 V		41		%
3 mm	50	PDE at p	Vbr + 5.0 V		47		%
6 mm	35	PDE at p	Vbr + 2.5 V	31			%
6 mm	35	PDE at p	Vbr + 5.0 V	41			%
1 mm	10	Gain (anode to cathode readout)	Vbr + 2.5 V		2 10⁵
1 mm	20	Gain (anode to cathode readout)	Vbr + 2.5 V		1 10⁶
1 mm	35	Gain (anode to cathode readout)	Vbr + 2.5 V		3 10⁶
3 mm	20	Gain (anode to cathode readout)	Vbr + 2.5 V		1 10⁶
3 mm	35	Gain (anode to cathode readout)	Vbr + 2.5 V		3 10⁶
3 mm	50	Gain (anode to cathode readout)	Vbr + 2.5 V		6 10⁶
6 mm	35	Gain (anode to cathode readout)	Vbr + 2.5 V		3 10⁶
1 mm	10	Dark Current	Vbr + 2.5 V	1		3	nA
1 mm	20	Dark Current	Vbr + 2.5 V	5		16	nA
1 mm	35	Dark Current	Vbr + 2.5 V	15		49	nA
3 mm	20	Dark Current	Vbr + 2.5 V	50		142	nA
3 mm	35	Dark Current	Vbr + 2.5 V	154		443	nA
3 mm	50	Dark Current	Vbr + 2.5 V	319		914	nA
6 mm	35	Dark Current	Vbr + 2.5 V	618		1750	nA
1 mm	10 , 20 , 35	Dark Count Rate	Vbr + 2.5 V	30		96	kHz
3 mm	20 , 35 , 50	Dark Count Rate	Vbr + 2.5 V	300		860	kHz
6 mm	35	Dark Count Rate	Vbr + 2.5 V	1200		3400	kHz
1 mm	10 , 20 , 35	Rise Time Fast Output			0.3		ns
3 mm	20 , 35 , 50	Rise Time Fast Output			0.6		ns
6 mm	35	Rise Time Fast Output			1.0		ns
1 mm	10 , 20 , 35	Signal Pulse Width Fast Output (FWHM)			0.6		ns
3 mm	20 , 35 , 50	Signal Pulse Width Fast Output (FWHM)			1.5		ns
6 mm	35	Signal Pulse Width Fast Output (FWHM)			3.2		ns
1 mm	10	Microcell recharge time constant			5		ns
1 mm	20	Microcell recharge time constant			23		ns
1 mm	35	Microcell recharge time constant			82		ns
3 mm	20	Microcell recharge time constant			23		ns
3 mm	35	Microcell recharge time constant			82		ns
3 mm	50	Microcell recharge time constant			159		ns
6 mm	35	Microcell recharge time constant			95		ns
1 mm	10	Capacitance (anodecathode)	Vbr + 2.5 V		50		pF
1 mm	20	Capacitance (anodecathode)	Vbr + 2.5 V		90		pF
1 mm	35	Capacitance (anodecathode)	Vbr + 2.5 V		100		pF
3 mm	20	Capacitance (anodecathode)	Vbr + 2.5 V		770		pF
3 mm	35	Capacitance (anodecathode)	Vbr + 2.5 V		850		pF
3 mm	50	Capacitance (anodecathode)	Vbr + 2.5 V		920		pF
6 mm	35	Capacitance (anodecathode)	Vbr + 2.5 V		3400		pF
1 mm	10	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		1		pF
1 mm	20	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		1		pF
1 mm	35	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		1		pF
3 mm	20	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		20		pF
3 mm	35	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		12		pF
3 mm	50	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		7		pF
6 mm	35	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		48		pF
1 mm	10 , 20 , 35	Temperature dependence of Vbr			21.5		mV/C
3 mm	20 , 35 , 50	Temperature dependence of Vbr					mV/C
6 mm	35	Temperature dependence of Vbr					mV/C
1 mm	10 , 20 , 35	Temperature dependence of Gain		-0.8			%/C
3 mm	20 , 35 , 50	Temperature dependence of Gain					%/C
6 mm	35	Temperature dependence of Gain					%/C
1 mm	10	Crosstalk	Vbr + 2.5 V	0.6			%
1 mm	20	Crosstalk	Vbr + 2.5 V		3		%
1 mm	35	Crosstalk	Vbr + 2.5 V		7		%
3 mm	20	Crosstalk	Vbr + 2.5 V		3		%
3 mm	35	Crosstalk	Vbr + 2.5 V		7		%
3 mm	50	Crosstalk	Vbr + 2.5 V		10		%
6 mm	35	Crosstalk	Vbr + 2.5 V		7		%
1 mm	10	Afterpulsing	Vbr + 2.5 V	0.2			%
1 mm	20	Afterpulsing	Vbr + 2.5 V		0.2		%
1 mm	35	Afterpulsing	Vbr + 2.5 V		0.2		%
3 mm	20	Afterpulsing	Vbr + 2.5 V		0.2		%
3 mm	35	Afterpulsing	Vbr + 2.5 V		0.2		%
3 mm	50	Afterpulsing	Vbr + 2.5 V		0.6		%
6 mm	35	Afterpulsing	Vbr + 2.5 V		0.2		%
1 mm	10010, 10020, 10035	Active area		1 1 mm²
3 mm	30020, 30035, 30050	Active area		3 3 mm²
6 mm	60035	Active area		6 6 mm²
1 mm	10010: 2880 10020: 1296 10035: 504	No. of microcells
3 mm	30020: 10998 30035: 4774 30050: 2668	No. of microcells
6 mm	60035: 18980	No. of microcells
1 mm	10010: 28% 10020: 48% 10035: 64%	Microcell fill factor
3 mm	30020: 48% 30035: 64% 30050: 72%	Microcell fill factor
6 mm	60035: 64%	Microcell fill factor
1 mm	10010, 10020, 10035	Package dimensions		1.5 1.8 mm²
3 mm	30020, 30035, 30050	Package dimensions		4 4 mm²
6 mm	60035	Package dimensions		7 7 mm²
		Recommended operating temperature range		-40C		+85C
		Maximum storage temperature				+105C
1 mm	10010, 10020, 10035	Maximum current			6		mA
3 mm	30020, 30035, 30050	Maximum current			15		mA
6 mm	60035	Maximum current			20		mA

2411220127_onsemi-MICROFC-10020-SMT-TR1_C905849.pdf

Company Details

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Changsha Purple Horn E-Commerce Co., Ltd.. is a professional company focus on integrated circuit ic business. Purple Horn will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Founded in 2009, Our compa... Changsha Purple Horn E-Commerce Co., Ltd.. is a professional company focus on integrated circuit ic business. Purple Horn will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Founded in 2009, Our compa...

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