Fast Response Silicon Photomultiplier Sensor onsemi MICROFC-10035-SMT-TR with

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Voltage - DC Reverse(Vr)	24.7V
Spectral Range	300nm~950nm
Dark Current	15nA
Operating Temperature	-40℃~+85℃
Description	24.7V 300nm~950nm 15nA SMD Photodiodes RoHS
Mfr. Part #	MICROFC-10035-SMT-TR
Package	SMD
Model Number	MICROFC-10035-SMT-TR

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Product Specification


Voltage - DC Reverse(Vr)	24.7V	Spectral Range	300nm~950nm
Dark Current	15nA	Operating Temperature	-40℃~+85℃
Description	24.7V 300nm~950nm 15nA SMD Photodiodes RoHS	Mfr. Part #	MICROFC-10035-SMT-TR
Package	SMD	Model Number	MICROFC-10035-SMT-TR

Product Overview

The C-Series low-light sensors from onsemi are Silicon Photomultipliers (SiPM) designed for high-gain, single-photon sensitivity. They offer an industry-leading low dark-count rate combined with high Photon Detection Efficiency (PDE). These sensors are ideal for ultrafast timing applications with a fast output rise time of 300 ps and pulse width of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they feature a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. C-Series SiPMs provide performance comparable to conventional PMTs but with the advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost.

Product Attributes

Brand: onsemi
Origin: Silicon
Material: Solid-state
Certifications: Lead-free, reflow soldering process compatible

Technical Specifications

Parameter	Sensor Size	Microcell Size	Min.	Typ.	Max.	Units	Overvoltage
Breakdown Voltage (Vbr)	1 mm	10, 20, 35	24.2	24.7		V
Breakdown Voltage (Vbr)	3 mm	20, 35, 50				V
Breakdown Voltage (Vbr)	6 mm	35				V
Recommended overvoltage Range	1 mm	10, 20, 35	1.0	5.0		V	(Voltage above Vbr)
Recommended overvoltage Range	3 mm	20, 35, 50				V	(Voltage above Vbr)
Recommended overvoltage Range	6 mm	35				V	(Voltage above Vbr)
Spectral Range	1 mm	10, 20, 35	300		950	nm
Spectral Range	3 mm	20, 35, 50				nm
Spectral Range	6 mm	35				nm
Peak Wavelength ( p)	1 mm	10, 20, 35		420		nm
Peak Wavelength ( p)	3 mm	20, 35, 50				nm
Peak Wavelength ( p)	6 mm	35				nm
PDE at p	1 mm	10	14			%	Vbr + 2.5 V
PDE at p	1 mm	20	24			%	Vbr + 2.5 V
PDE at p	1 mm	35	31			%	Vbr + 2.5 V
PDE at p	1 mm	10	18			%	Vbr + 5.0 V
PDE at p	1 mm	20	31			%	Vbr + 5.0 V
PDE at p	1 mm	35	41			%	Vbr + 5.0 V
PDE at p	3 mm	20	24			%	Vbr + 2.5 V
PDE at p	3 mm	35	31			%	Vbr + 2.5 V
PDE at p	3 mm	50	35			%	Vbr + 2.5 V
PDE at p	3 mm	20	31			%	Vbr + 5.0 V
PDE at p	3 mm	35	41			%	Vbr + 5.0 V
PDE at p	3 mm	50	47			%	Vbr + 5.0 V
PDE at p	6 mm	35	31			%	Vbr + 2.5 V
PDE at p	6 mm	35	41			%	Vbr + 5.0 V
Gain (anode to cathode readout)	1 mm	10	2 10⁵				Vbr + 2.5 V
Gain (anode to cathode readout)	1 mm	20	1 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	1 mm	35	3 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	3 mm	20	1 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	3 mm	35	3 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	3 mm	50	6 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	6 mm	35	3 10⁶				Vbr + 2.5 V
Dark Current	1 mm	10	1		3	nA	Vbr + 2.5 V
Dark Current	1 mm	20	5		16	nA	Vbr + 2.5 V
Dark Current	1 mm	35	15		49	nA	Vbr + 2.5 V
Dark Current	3 mm	20	50		142	nA	Vbr + 2.5 V
Dark Current	3 mm	35	154		443	nA	Vbr + 2.5 V
Dark Current	3 mm	50	319		914	nA	Vbr + 2.5 V
Dark Current	6 mm	35	618		1750	nA	Vbr + 2.5 V
Dark Count Rate	1 mm	10	30		96	kHz	Vbr + 2.5 V
Dark Count Rate	1 mm	20	30		96	kHz	Vbr + 2.5 V
Dark Count Rate	1 mm	35	30		96	kHz	Vbr + 2.5 V
Dark Count Rate	3 mm	20	300		860	kHz	Vbr + 2.5 V
Dark Count Rate	3 mm	35	300		860	kHz	Vbr + 2.5 V
Dark Count Rate	3 mm	50	300		860	kHz	Vbr + 2.5 V
Dark Count Rate	6 mm	35	1200		3400	kHz	Vbr + 2.5 V
Rise Time Fast Output	1 mm	10, 20, 35		0.3		ns
Rise Time Fast Output	3 mm	20, 35, 50		0.6		ns
Rise Time Fast Output	6 mm	35		1.0		ns
Signal Pulse Width Fast Output (FWHM)	1 mm	10, 20, 35		0.6		ns
Signal Pulse Width Fast Output (FWHM)	3 mm	20, 35, 50		1.5		ns
Signal Pulse Width Fast Output (FWHM)	6 mm	35		3.2		ns
Microcell recharge time constant	1 mm	10		5		ns
Microcell recharge time constant	1 mm	20	23			ns
Microcell recharge time constant	1 mm	35	82			ns
Microcell recharge time constant	3 mm	20	23			ns
Microcell recharge time constant	3 mm	35	82			ns
Microcell recharge time constant	3 mm	50	159			ns
Microcell recharge time constant	6 mm	35	95			ns
Capacitance (anodecathode)	1 mm	10	50			pF	Vbr + 2.5 V
Capacitance (anodecathode)	1 mm	20	90			pF	Vbr + 2.5 V
Capacitance (anodecathode)	1 mm	35	100			pF	Vbr + 2.5 V
Capacitance (anodecathode)	3 mm	20	770			pF	Vbr + 2.5 V
Capacitance (anodecathode)	3 mm	35	850			pF	Vbr + 2.5 V
Capacitance (anodecathode)	3 mm	50	920			pF	Vbr + 2.5 V
Capacitance (anodecathode)	6 mm	35	3400			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	1 mm	10	1			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	1 mm	20	1			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	1 mm	35	1			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	3 mm	20	20			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	3 mm	35	12			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	3 mm	50	7			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	6 mm	35	48			pF	Vbr + 2.5 V
Temperature dependence of Vbr	1 mm	10, 20, 35		21.5		mV/C
Temperature dependence of Vbr	3 mm	20, 35, 50				mV/C
Temperature dependence of Vbr	6 mm	35				mV/C
Temperature dependence of Gain	1 mm	10, 20, 35		-0.8		%/C
Temperature dependence of Gain	3 mm	20, 35, 50				%/C
Temperature dependence of Gain	6 mm	35				%/C
Crosstalk	1 mm	10	0.6			%	Vbr + 2.5 V
Crosstalk	1 mm	20	3			%	Vbr + 2.5 V
Crosstalk	1 mm	35	7			%	Vbr + 2.5 V
Crosstalk	3 mm	20	3			%	Vbr + 2.5 V
Crosstalk	3 mm	35	7			%	Vbr + 2.5 V
Crosstalk	3 mm	50	10			%	Vbr + 2.5 V
Crosstalk	6 mm	35	7			%	Vbr + 2.5 V
Afterpulsing	1 mm	10	0.2			%	Vbr + 2.5 V
Afterpulsing	1 mm	20	0.2			%	Vbr + 2.5 V
Afterpulsing	1 mm	35	0.2			%	Vbr + 2.5 V
Afterpulsing	3 mm	20	0.2			%	Vbr + 2.5 V
Afterpulsing	3 mm	35	0.2			%	Vbr + 2.5 V
Afterpulsing	3 mm	50	0.6			%	Vbr + 2.5 V
Afterpulsing	6 mm	35	0.2			%	Vbr + 2.5 V
Active area	1 mm	10010, 10020, 10035	1 1 mm²
Active area	3 mm	30020, 30035, 30050	3 3 mm²
Active area	6 mm	60035	6 6 mm²
No. of microcells	1 mm	10010	2880
No. of microcells	1 mm	10020	1296
No. of microcells	1 mm	10035	504
No. of microcells	3 mm	30020	10998
No. of microcells	3 mm	30035	4774
No. of microcells	3 mm	30050	2668
No. of microcells	6 mm	60035	18980
Microcell fill factor	1 mm	10010	28%
Microcell fill factor	1 mm	10020	48%
Microcell fill factor	1 mm	10035	64%
Microcell fill factor	3 mm	30020	48%
Microcell fill factor	3 mm	30035	64%
Microcell fill factor	3 mm	30050	72%
Microcell fill factor	6 mm	60035	64%
Package dimensions	1 mm	10010, 10020, 10035	1.5 1.8 mm²
Package dimensions	3 mm	30020, 30035, 30050	4 4 mm²
Package dimensions	6 mm	60035	7 7 mm²
Recommended operating temperature range			-40C		+85C
Maximum storage temperature					+105C
Soldering conditions							Lead-free, reflow soldering process compatible (MSL 3 for tape & reel quantities; MSL 4 for tape only qty.)
Encapsulant type							Clear transfer molding compound
Encapsulant refractive Index			1.59			@ 420 nm
Maximum current levels	1 mm	10010, 10020, 10035			6 mA
Maximum current levels	3 mm	30020, 30035, 30050			15 mA
Maximum current levels	6 mm	60035			20 mA

2411220452_onsemi-MICROFC-10035-SMT-TR_C891563.pdf

Company Details

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Year Established:

2009 
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Employee Number:

300~500 
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Changsha Purple Horn E-Commerce Co., Ltd.. is a professional company focus on integrated circuit ic business. Purple Horn will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Founded in 2009, Our compa... Changsha Purple Horn E-Commerce Co., Ltd.. is a professional company focus on integrated circuit ic business. Purple Horn will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Founded in 2009, Our compa...

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