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High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor YP601241T
Product Overview
Innotion's YP601241T is a 15-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a plastic SOT-89 package.
Technical Specifications
Package
SOT-89
Output Power
15W
Operating Frequency
DC ~6GHz
Voltage
28V
Key Features
High Efficiency and Linear Gain Operation
Negative Gate Voltage and Bias Sequencing Required
Excellent Thermal Stability and Excellent Ruggedness
Metal Based Package Sealed with Ceramic-Epoxy Lid
Gold Metallization System: Chip-Wire Bond-Package
Product Images
Company Information
Suzhou Industrial Park. Founded in 2010. The only official shop! We sell our own products at the best price, such as WiFi amplifier, VCO, sweep signal source, wireless card group and other product lines.
Professional people do professional things. We have mastered some core technologies in the product field and have a number of independent intellectual property rights.
Our products have been sold to many domestic cities, but also very popular with many foreign customers, such as Russia, the United States, South Korea, Vietnam, Sweden and so on.
Our Commitment
We stand by our commitment to ensure first class customer service.
Zhongshi Zhihui Technology (suzhou) Co., Ltd. is located in Suzhou Industrial Park, the company is mainly engaged in, and can provide customers with wireless communication network coverage solutions of high-tech enterprises. The company implements radio-oriented development strategy based on radio f... Zhongshi Zhihui Technology (suzhou) Co., Ltd. is located in Suzhou Industrial Park, the company is mainly engaged in, and can provide customers with wireless communication network coverage solutions of high-tech enterprises. The company implements radio-oriented development strategy based on radio f...