IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic

Product Specification

IRFB4227PBF 200V/195A MOSFET with Ultra-Low 4.5mΩ Rds(on) TO-220 Package Logic-Level Drive Avalanche Rated Fast Switching High Efficiency Robust Design for Motor Control & Power Systems

Features

Advanced Process Technology

Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Low QG for Fast Response

High Repetitive Peak Current Capability for Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for Improved Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

Class-D Audio Amplifier 300W-500W (Half-bridge)

Applications

1:Motor Drive and Control:

This is its most typical application scenario. Its high voltage (200V), extremely high current (195A), and ultra-low on-resistance (4.5mΩ) make it highly efficient for driving and controlling high-power DC motors, brushless DC motors (BLDC), and servo motors. It is widely used in industrial automation, robotics, electric vehicles (e.g., motor controllers), drone ESCs (Electronic Speed Controllers), and more.

2:Switch-Mode Power Supplies (SMPS):
Particularly suitable for high-current-output DC-DC converters, synchronous rectification, and power factor correction (PFC) circuits. Its low Rds(on) significantly reduces conduction losses, improving overall power supply efficiency.

3:Power Inverters:
An ideal choice for inverter bridges in solar photovoltaic inverters, UPS (uninterruptible power supplies), frequency converters, and welding machines, where it converts DC power into AC power.

4:High-Current Switching and Load Switching:
Can be used to build solid-state relays, electronic load switches, and other devices for controlling high-power DC loads.

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFETutilizes the latest processing technigues to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

INFORMATION

Drawing

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