SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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Manufacturer of a wide range of products which include STW43NM60ND,IRF7530PBF,IRF1404STRLPBF,etc
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| Product Category : | MOSFET |
| Vgs (Max) : | ±25V |
| Current - Continuous Drain (Id) @ 25°C : | 35A (Tc) |
| @ qty : | 0 |
| FET Type : | N-Channel |
| Mounting Type : | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs : | 145nC @ 10V |
| Manufacturer : | STMicroelectronics |
| Minimum Quantity : | 1 |
| Drive Voltage (Max Rds On, Min Rds On) : | 10V |
| Factory Stock : | 0 |
| Operating Temperature : | 150°C (TJ) |
| FET Feature : | - |
| Series : | FDmesh™ |
| Input Capacitance (Ciss) (Max) @ Vds : | 4300pF @ 50V |
| Supplier Device Package : | TO-247-3 |
| Part Status : | Obsolete |
| Packaging : | Tube |
| Rds On (Max) @ Id, Vgs : | 88 mOhm @ 17.5A, 10V |
| Power Dissipation (Max) : | 255W (Tc) |
| Package / Case : | TO-247-3 |
| Technology : | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id : | 5V @ 250µA |
| Drain to Source Voltage (Vdss) : | 600V |
| Description | MOSFET N-CH 600V 35A TO-247 |
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| Supplier Device Package : | Micro8™ |
| Product Category : | MOSFET |
| Factory Stock : | 0 |
| Minimum Quantity : | 0 |
| Input Capacitance (Ciss) (Max) @ Vds : | 1310pF @ 15V |
| Package / Case : | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Current - Continuous Drain (Id) @ 25°C : | 5.4A |
| Packaging : | Tube |
| @ qty : | 0 |
| Operating Temperature : | - |
| FET Type : | 2 N-Channel (Dual) |
| FET Feature : | Standard |
| Drain to Source Voltage (Vdss) : | 20V |
| Mounting Type : | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs : | 26nC @ 4.5V |
| Rds On (Max) @ Id, Vgs : | 30 mOhm @ 5.4A, 4.5V |
| Power - Max : | 1.3W |
| Vgs(th) (Max) @ Id : | 1.2V @ 250µA |
| Series : | HEXFET® |
| Manufacturer : | Infineon Technologies |
| Description | MOSFET 2N-CH 20V 5.4A MICRO8 |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | MOSFET |
| Mounting Style : | SMD/SMT |
| Minimum Operating Temperature : | - 55 C |
| Package / Case : | TO-263-3 |
| Maximum Operating Temperature : | + 175 C |
| Vds - Drain-Source Breakdown Voltage : | 40 V |
| Packaging : | Reel |
| Vgs th - Gate-Source Threshold Voltage : | 4 V |
| Id - Continuous Drain Current : | 162 A |
| Rds On - Drain-Source Resistance : | 3.5 mOhms |
| Number of Channels : | 1 Channel |
| Vgs - Gate-Source Voltage : | 20 V |
| Qg - Gate Charge : | 160 nC |
| Manufacturer : | IR / Infineon |
| Description | MOSFET MOSFT 40V 162A 4mOhm 160nC |
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| Product Category : | MOSFET |
| Vgs (Max) : | ±20V |
| Current - Continuous Drain (Id) @ 25°C : | 13.8A (Tc) |
| @ qty : | 0 |
| FET Type : | N-Channel |
| Mounting Type : | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs : | 43nC @ 10V |
| Manufacturer : | Infineon Technologies |
| Minimum Quantity : | 500 |
| Drive Voltage (Max Rds On, Min Rds On) : | 10V |
| Factory Stock : | 0 |
| Operating Temperature : | -55°C ~ 150°C (TJ) |
| FET Feature : | - |
| Series : | CoolMOS™ |
| Input Capacitance (Ciss) (Max) @ Vds : | 950pF @ 100V |
| Supplier Device Package : | PG-TO-220-3 |
| Part Status : | Active |
| Packaging : | Tube |
| Rds On (Max) @ Id, Vgs : | 280 mOhm @ 6.5A, 10V |
| Power Dissipation (Max) : | 104W (Tc) |
| Package / Case : | TO-220-3 |
| Technology : | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id : | 3.5V @ 430µA |
| Drain to Source Voltage (Vdss) : | 600V |
| Description | MOSFET N-CH 600V 13.8A TO220 |
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| Package : | TO-247 |
| Product Category : | MOSFET |
| Manufacturer : | Fuji Electric |
| Description | SCHOTTKY BARRIER DIODE |
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| Supplier Device Package : | 8-TSSOP |
| Product Category : | MOSFET |
| Factory Stock : | 0 |
| Minimum Quantity : | 4000 |
| Input Capacitance (Ciss) (Max) @ Vds : | 1340pF @ 15V |
| Package / Case : | 8-TSSOP (0.173", 4.40mm Width) |
| Part Status : | Obsolete |
| Current - Continuous Drain (Id) @ 25°C : | 4.8A |
| Packaging : | Tape & Reel (TR) |
| @ qty : | 0 |
| Operating Temperature : | -55°C ~ 150°C (TJ) |
| FET Type : | 2 N-Channel (Dual) |
| FET Feature : | Logic Level Gate |
| Drain to Source Voltage (Vdss) : | 20V |
| Mounting Type : | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs : | 23nC @ 4.5V |
| Rds On (Max) @ Id, Vgs : | 35 mOhm @ 4.8A, 4.5V |
| Power - Max : | 1.2W |
| Vgs(th) (Max) @ Id : | 1.2V @ 250µA |
| Series : | HEXFET® |
| Manufacturer : | Infineon Technologies |
| Description | MOSFET 2N-CH 20V 4.8A 8TSSOP |
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| Product Category : | MOSFET |
| Vgs (Max) : | ±20V |
| Current - Continuous Drain (Id) @ 25°C : | 5.1A (Ta) |
| @ qty : | 0 |
| FET Type : | N-Channel |
| Mounting Type : | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs : | 38nC @ 10V |
| Manufacturer : | Infineon Technologies |
| Minimum Quantity : | 1 |
| Drive Voltage (Max Rds On, Min Rds On) : | 10V |
| Factory Stock : | 0 |
| Operating Temperature : | -55°C ~ 150°C (TJ) |
| FET Feature : | - |
| Series : | HEXFET® |
| Input Capacitance (Ciss) (Max) @ Vds : | 1647pF @ 75V |
| Supplier Device Package : | 8-SO |
| Packaging : | Tube |
| Rds On (Max) @ Id, Vgs : | 43 mOhm @ 3.1A, 10V |
| Power Dissipation (Max) : | 2.5W (Ta) |
| Package / Case : | 8-SOIC (0.154", 3.90mm Width) |
| Technology : | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id : | 5V @ 100µA |
| Drain to Source Voltage (Vdss) : | 150V |
| Description | MOSFET N-CH 150V 5.1A 8-SOIC |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | MOSFET |
| Mounting Style : | Through Hole |
| Package / Case : | TO-262-3 |
| Maximum Operating Temperature : | + 175 C |
| Vds - Drain-Source Breakdown Voltage : | 40 V |
| Packaging : | Tube |
| Id - Continuous Drain Current : | 295 A |
| Rds On - Drain-Source Resistance : | 1.8 mOhms |
| Number of Channels : | 1 Channel |
| Qg - Gate Charge : | 150 nC |
| Manufacturer : | IR / Infineon |
| Description | MOSFET 40V 295A 1.8mOhm Automotive MOSFET |
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| Transistor Polarity : | P-Channel |
| Technology : | Si |
| Product Category : | MOSFET |
| Mounting Style : | Through Hole |
| Package / Case : | TO-251-3 |
| Vds - Drain-Source Breakdown Voltage : | - 100 V |
| Packaging : | Tube |
| Id - Continuous Drain Current : | - 13 A |
| Rds On - Drain-Source Resistance : | 205 mOhms |
| Number of Channels : | 1 Channel |
| Vgs - Gate-Source Voltage : | 20 V |
| Qg - Gate Charge : | 38.7 nC |
| Manufacturer : | Infineon Technologies |
| Description | MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Id - Continuous Drain Current : | 6.6 A |
| Mounting Style : | SMD/SMT |
| Tradename : | CoolMOS |
| Minimum Operating Temperature : | - 55 C |
| Package / Case : | TO-252-3 |
| Maximum Operating Temperature : | + 150 C |
| Channel Mode : | Enhancement |
| Vds - Drain-Source Breakdown Voltage : | 500 V |
| Packaging : | Reel |
| Vgs th - Gate-Source Threshold Voltage : | 2.5 V |
| Product Category : | MOSFET |
| Rds On - Drain-Source Resistance : | 860 mOhms |
| Number of Channels : | 1 Channel |
| Vgs - Gate-Source Voltage : | 20 V |
| Qg - Gate Charge : | 10.5 nC |
| Manufacturer : | Infineon Technologies |
| Description | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE |
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