China factories

Chat Now Send Email
China factory - SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

  • China,Shenzhen
  • Verified Supplier
  1. Home
  2. Products
  3. About Us
  4. Contact Us

Leave a Message

we will call you back quickly!

Submit Requirement
China IPP60R280E6XKSA1
China IPP60R280E6XKSA1

  1. China IPP60R280E6XKSA1

IPP60R280E6XKSA1

  1. MOQ:
  2. Price:
  3. Get Latest Price
Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 13.8A (Tc)
@ qty : 0
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 500
Drive Voltage (Max Rds On, Min Rds On) : 10V
Factory Stock : 0
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 100V
Supplier Device Package : PG-TO-220-3
Part Status : Active
Packaging : Tube
Rds On (Max) @ Id, Vgs : 280 mOhm @ 6.5A, 10V
Power Dissipation (Max) : 104W (Tc)
Package / Case : TO-220-3
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 3.5V @ 430µA
Drain to Source Voltage (Vdss) : 600V
Description MOSFET N-CH 600V 13.8A TO220

View Detail Information

Inquiry by Email Get Latest Price
Chat online Now Ask for best deal

Explore similar products

  1. China IRF3808STRLPBF

    IRF3808STRLPBF

    Chat online Now
  2. China IPA65R125C7XKSA1

    IPA65R125C7XKSA1

    Chat online Now
  3. China BSP135 E6327

    BSP135 E6327

    Chat online Now
  4. China IPB80N06S205ATMA1

    IPB80N06S205ATMA1

    Chat online Now
  1. Product Details
  2. Company Details

Product Specification

Product Category : MOSFET Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 13.8A (Tc) @ qty : 0
FET Type : N-Channel Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V Manufacturer : Infineon Technologies
Minimum Quantity : 500 Drive Voltage (Max Rds On, Min Rds On) : 10V
Factory Stock : 0 Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : - Series : CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 100V Supplier Device Package : PG-TO-220-3
Part Status : Active Packaging : Tube
Rds On (Max) @ Id, Vgs : 280 mOhm @ 6.5A, 10V Power Dissipation (Max) : 104W (Tc)
Package / Case : TO-220-3 Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 3.5V @ 430µA Drain to Source Voltage (Vdss) : 600V
Description MOSFET N-CH 600V 13.8A TO220
The IPP60R280E6XKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Agent

  • Year Established:

    2014

  • Total Annual:

    6000000-1200000

  • Employee Number:

    100~200

  • Ecer Certification:

    Verified Supplier

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD is a professional one-stop procurement service agent of hybrid electronic components. We have advanced information technology, years of market experience, professional management team and advanced inventory management technology. Since the establishment in 20... SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD is a professional one-stop procurement service agent of hybrid electronic components. We have advanced information technology, years of market experience, professional management team and advanced inventory management technology. Since the establishment in 20...

+ Read More

Get in touch with us

  • Reach Us
  • SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
  • Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen
  • https://www.chipsics.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement