Supply Ability | 50pcs/months |
Delivery Time | within 40days |
Packaging Details | Packaged in a class 100 clean room environment, in cassettes of single wafer containers |
applications | device,led, 5G, detector,power electronics |
industry | semicondctor wafer |
material | semiconductor sic |
color | green or white or blue |
hardness | 9.0 |
type | 4H,6H,doped, no-doped, |
Brand Name | zmsh |
Model Number | 6inch-001 |
Place of Origin | china |
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Product Specification
Supply Ability | 50pcs/months | Delivery Time | within 40days |
Packaging Details | Packaged in a class 100 clean room environment, in cassettes of single wafer containers | applications | device,led, 5G, detector,power electronics |
industry | semicondctor wafer | material | semiconductor sic |
color | green or white or blue | hardness | 9.0 |
type | 4H,6H,doped, no-doped, | Brand Name | zmsh |
Model Number | 6inch-001 | Place of Origin | china |
High Light | semicondctor silicon carbide substrate ,6 Inch sic substrate ,Dummy Grade sic wafer |
4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade
6inch 4H-N 500mm 350um sic substrate wafer for powder device
6 inch diameter, Silicon Carbide (SiC) Substrate Specification | ||||||||
Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||
Diameter | 150.0 mm±0.2mm | |||||||
ThicknessΔ | 350 μm±25μm or 500±25un | |||||||
Wafer Orientation | Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI | |||||||
Primary Flat | {10-10}±5.0° | |||||||
Primary Flat Length | 47.5 mm±2.5 mm | |||||||
Edge exclusion | 3 mm | |||||||
TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | |||||||
Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤100 cm-2 | ||||
Resistivity | 4H-N | 0.015~0.028 Ω·cm | ||||||
4/6H-SI | ≥1E5 Ω·cm | |||||||
Roughness | Polish Ra≤1 nm | |||||||
CMP Ra≤0.5 nm | ||||||||
Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||
Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤2% | Cumulative area ≤5% | |||||
Polytype Areas by high intensity light | None | Cumulative area≤2% | Cumulative area≤5% | |||||
Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||
Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||
Contamination by high intensity light | None |
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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