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SHANGHAI FAMOUS TRADE CO.,LTD

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SiC Substrate

Manufacturer of a wide range of products which include Diamond Wire Single-Line Cutting Machine for SiC/Sapphire/Quartz/Ceramic,Multi-Wire Diamond Saw Cutting Machine for SiC/Sapphire/Ultra-Hard Brittle,Industrial-Grade 6H SiC Sub...

Quality Diamond Wire Single-Line Cutting Machine for SiC/Sapphire/Quartz/Ceramic for sale

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Diamond Wire Single-Line Cutting Machine for SiC/Sapphire/Quartz/Ceramic

  1. MOQ: 3

  2. Price: By case

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Payment Terms T/T
Delivery Time 3-6 months
Packaging Details package in 100-grade cleaning room
Swing angle 0~±12.5
Lift stroke(mm) 650(mm)
Lift speed(mm/min) 0~9.99
Diamond wire diameter(mm) φ0.12~φ0.45
Running speed (m/s) 1500m/min
Material Processing SiC/Sapphire/Quartz/Ceramic
Brand Name ZMSH
Model Number Diamond Wire Single-Line Cutting Machine
Certification rohs
Place of Origin CHINA

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Quality Multi-Wire Diamond Saw Cutting Machine for SiC/Sapphire/Ultra-Hard Brittle for sale

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Multi-Wire Diamond Saw Cutting Machine for SiC/Sapphire/Ultra-Hard Brittle

  1. MOQ: 3

  2. Price: By case

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Payment Terms T/T
Delivery Time 3-6 months
Packaging Details package in 100-grade cleaning room
Lift speed 225mm
Running speed 1500m/min
Storage 300L
Main drive motor 17.8kw×2
Material Processing SiC/Sapphire/Ultra-Hard Brittle
Brand Name ZMSH
Model Number Multi-Wire Diamond Saw Cutting Machine
Certification rohs
Place of Origin CHINA

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Quality Industrial-Grade 6H SiC Substrates for High-Temperature, UV, and Precision Electronics for sale

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Industrial-Grade 6H SiC Substrates for High-Temperature, UV, and Precision Electronics

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Material Single-Crystal 6H SiC
Crystal Structure Hexagonal (6H)
Diameter / Size 25 mm (2″), 50 mm (4″), 100 mm (4″), 150 mm (6″), 200 mm (8″), 300 mm (12″); square or custom sizes available
Thickness 350–1,000 µm (customizable)
Surface Finish Epi-ready CMP, double-side polished (DSP), single-side polished (SSP)
Total Thickness Variation (TTV) ≤5 µm typical
Bow / Warp ≤40 µm (6″ typical)
Conductivity N-type (conductive), semi-insulating (SI) options
Brand Name ZMSH
Place of Origin SHANGHAI,CHINA

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Quality 4H Silicon Carbide Substrate  for Power Electronics, RF Devices & UV Optoelectronics for sale

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4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics

  1. MOQ: 10

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Payment Terms T/T
Delivery Time 2-4 Weeks
Material 4H-SiC Single Crystal (N-type)
Dimensions 10×10 mm (±0.05 mm)
Thickness Options 100–500 μm
Orientation (0001) ± 0.5°
Surface Quality CMP / Polished, Ra ≤ 0.5 nm
Color Green-tea surface tone (SiC typical
Resistivity 0.01–0.1 Ω·cm
Defects MPD < 1 cm⁻²
Brand Name ZMSH
Place of Origin SHANGHAI,CHINA

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Quality 4H-N Type SiC Substrate 10x10mm Wafer for Power Electronics for sale

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4H-N Type SiC Substrate 10x10mm Wafer for Power Electronics

  1. MOQ: 25

  2. Price: By case

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Payment Terms T/T
Supply Ability 1000pcs per month
Delivery Time 2-4 weeks
Packaging Details package in 100-grade cleaning room
Type 4H-SiC
Standard Dimensions 10×10 mm (±0.05mm tolerance)
Thickness Options 100-500 μm
Resistivity 0.01-0.1 Ω·cm
Thermal Conductivity 490 W/m·K (typical)
ApplicationsDevices New Energy Vehicle Powertrains, Aerospace Electronics
Brand Name ZMSH
Model Number SiC Substrate 10×10mm
Certification rohs
Place of Origin CHINA

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Quality Silicon Carbide Rectangle Substrate SiC Chip for Advanced Electronics for sale

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Silicon Carbide Rectangle Substrate SiC Chip for Advanced Electronics

  1. MOQ: 10

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Payment Terms T/T
Delivery Time 2-4 weeks
Dimensions Custom rectangular sizes available
Thickness 330–500 μm (customizable)
Polytype 4H-SiC or 6H-SiC
Orientation C-plane, off-axis (0°/4°)
Surface Finish Single/double-side polished, epi-ready
Doping Options N-type, P-type
Quality Grade Research or device-grade
Brand Name ZMSH
Place of Origin SHANGHAI,CHINA

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Quality 4H-SEMI SiC Substrate Cutting Disc Dia 10mm Thickness 5mm <0001> High Hardness for sale

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4H-SEMI SiC Substrate Cutting Disc Dia 10mm Thickness 5mm <0001> High Hardness

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Payment Terms T/T
Delivery Time 2-4 weeks
Material SiC Single Crystal
Grade Prime /Dummy
Orientation <0001>
Type 4H-SEMI
Dia 10mm
Thickness 5mm
Brand Name ZMSH
Model Number SiC Substrate
Place of Origin China

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Quality SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material for sale

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SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material

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Payment Terms T/T
Delivery Time in 30 days
Parameter N-type
Polytype 4H
Growth Method CVD
Thickness 350µm
Grades Prime, Dummy,Reaserch
Thermal Expansion Coefficient 4.5 (10-6K-1)
Brand Name ZMSH
Model Number SiC substrate
Certification ROHS
Place of Origin Shanghai China

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Quality Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm for sale

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Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm

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Payment Terms T/T
Delivery Time in 30 days
Grade Production/ Research/ Dummy
Doped Silicon Doped/Un-doped/Zn Doped
Diameter 150.0 mm +/- 0.2 mm
Type 4H-N
Particle Free/Low Particle
Electrical Resistivity(Ohm-cm) 0.015~0.025
Brand Name ZMSH
Model Number Silicon Carbide Wafer
Certification ROHS
Place of Origin Shanghai China

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Quality Silicon Carbide wafers 8inch 200mm Polishing  Substrate  Semiconductor for sale

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Silicon Carbide wafers 8inch 200mm Polishing Substrate Semiconductor

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Payment Terms T/T, T/T
Delivery Time in 30 days
Property 4H-SiC
Material SiC Single Crystal 4H-N Type
Grade Dummy /Production Grade
Thicnkss 0.35mm~0.5mm
Density 3.21 g/cm3
Dielectric Constant c~9.66
Brand Name ZMSH
Model Number Silicon Carbide wafers
Certification ROHS
Place of Origin Shanghai China

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Get in touch with us

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1810,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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