SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4 WEEKS |
| Material | Silicon Carbide (SiC) |
| Purity | ≥ 99% (typical) |
| Density | 3.10 – 3.20 g/cm³ |
| Hardness | ≥ 2500 HV |
| Flexural Strength | ≥ 350 MPa |
| Elastic Modulus | ~410 GPa |
| Thermal Conductivity | 120 – 200 W/m·K |
| Coefficient of Thermal Expansion (CTE) | ~4.0 × 10⁻⁶ /K |
| Brand Name | ZMSH |
| Place of Origin | SHANGHAI,CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4 WEEKS |
| Material | Silicon Carbide (SiC) | Purity | ≥ 99% (typical) |
| Density | 3.10 – 3.20 g/cm³ | Hardness | ≥ 2500 HV |
| Flexural Strength | ≥ 350 MPa | Elastic Modulus | ~410 GPa |
| Thermal Conductivity | 120 – 200 W/m·K | Coefficient of Thermal Expansion (CTE) | ~4.0 × 10⁻⁶ /K |
| Brand Name | ZMSH | Place of Origin | SHANGHAI,CHINA |
| High Light | Custom SiC ceramic plate for semiconductors ，Stepped ceramic substrate for semiconductor equipment ，Silicon Carbide plate with high thermal conductivity | ||
This custom silicon carbide ceramic component features a circular plate geometry with a precision-machined stepped edge. The stepped structure enables accurate axial positioning and stable integration into semiconductor process chambers and advanced thermal systems.
Manufactured from high-purity SiC ceramic, the component offers excellent resistance to high temperatures, plasma exposure, chemical corrosion, and thermal shock. The surface is intentionally left unpolished, as the component is designed for functional and structural use rather than optical or electronic applications.
Typical uses include chamber covers, liner caps, support plates, and protective structural components in semiconductor manufacturing equipment where long-term dimensional stability and material reliability are critical.
High-purity silicon carbide ceramic material
Stepped edge design for precise positioning and assembly
Ground, unpolished surface optimized for functional performance
Excellent thermal stability and low thermal deformation
Superior resistance to plasma, chemicals, and corrosive gases
High mechanical strength and stiffness
Suitable for vacuum and clean process environments
Custom dimensions and geometries available
| Parameter | Specification |
|---|---|
| Material | Silicon Carbide (SiC) |
| Purity | ≥ 99% (typical) |
| Density | 3.10 – 3.20 g/cm³ |
| Hardness | ≥ 2500 HV |
| Flexural Strength | ≥ 350 MPa |
| Elastic Modulus | ~410 GPa |
| Thermal Conductivity | 120 – 200 W/m·K |
| Coefficient of Thermal Expansion (CTE) | ~4.0 × 10⁻⁶ /K |
| Maximum Working Temperature | > 1600°C (in inert atmosphere) |
| Maximum Working Temperature (Air) | ~1400°C |
| Electrical Resistivity | High (insulating grade available) |
| Surface Finish | Ground / Unpolished |
| Flatness | Custom tolerance available |
| Edge Condition | Chamfered or customer-specified |
| Environment Compatibility | Vacuum, plasma, corrosive gases |
Note: Parameters may vary depending on SiC grade, forming method, and machining requirements.
Semiconductor process chambers (CVD, PECVD, LPCVD, etching systems)
Chamber covers and liner caps
Structural support plates in high-temperature equipment
Plasma-facing or plasma-adjacent ceramic components
Advanced vacuum processing systems
Custom ceramic structural parts for semiconductor and optoelectronic equipment
Custom outer diameter and thickness
Custom step height and width
Optional fine grinding or polishing upon request
Machining according to customer drawings or samples
Small batch, prototype, and volume production supported
A:
This component is primarily used as a structural or functional ceramic part, such as a chamber cover, support plate, or liner cap, in semiconductor and high-temperature process equipment. The stepped design allows accurate positioning and stable assembly within equipment structures.
A:
The unpolished surface is intentional. This component is not used for optical or electronic functions, but for structural and protective purposes. Ground surfaces are sufficient and often preferred for improved mechanical stability and reduced manufacturing cost in process chamber applications.
A:
Yes. Silicon carbide offers excellent resistance to plasma erosion and chemical corrosion, making it suitable for plasma-facing or plasma-adjacent applications in semiconductor process chambers.
A:
Yes. The material and manufacturing process are compatible with vacuum environments. SiC ceramic exhibits low outgassing and maintains dimensional stability under vacuum and thermal cycling conditions.
A:
Absolutely. Outer diameter, thickness, step height, step width, and edge features can all be customized according to customer drawings or application requirements.
A:
Optional surface finishing, including fine grinding or polishing, can be provided upon request. Coatings may also be available depending on the application and operating environment.
A:
This type of SiC ceramic component is commonly used in semiconductor manufacturing, optoelectronics, advanced vacuum systems, and high-temperature industrial processing equipment.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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