12-Inch 300mm 4H-N 6H-N SiC Single Crystal Silicon Carbide Wafer for Power & LED

Product Specification

12-Inch 300mm 4H 6H SiC Single Crystal Silicon Carbide Wafer for Power & LED Devices

Product Overview:

ZMSH provides high-quality 12-inch (300mm) single crystal silicon carbide (SiC) wafers, grown using the Physical Vapor Transport (PVT) method. Silicon carbide is a wide-bandgap semiconductor with excellent electrical and thermal properties, including high thermal conductivity, high breakdown voltage, high electron mobility, and high saturated drift velocity, making it ideal for advanced power electronics, high-voltage MOSFETs, Schottky diodes, IGBTs, and GaN-based optoelectronic devices.

12-inch SiC wafers from ZMSH are optimized for low basal plane dislocation (BPD) density, enabling superior device performance and reliability. Our wafers are widely used in high-power, high-temperature, and high-frequency applications in both industrial and research environments.

Key Features

Applications

1. Power Electronics:

• SiC MOSFETs, PiN diodes, Schottky diodes (SBD), JBS diodes, IGBTs, and SiC BJTs.

• High-voltage rectifiers (3kV–12kV) and high-efficiency power modules.

• Enables smaller, lighter, and more efficient power electronic systems compared to silicon-based devices.

2. Optoelectronic Devices:

• GaN-based LEDs and laser diodes.

• Excellent lattice matching with GaN epitaxial layers ensures high light extraction efficiency and longer device lifespan.

• Superior thermal conductivity (10× sapphire) enables better heat dissipation in high-power LEDs.

3. Research & Advanced Devices:

• High-frequency and high-temperature electronic devices.

• Material for experimental studies on BPD reduction, dislocation control, and next-generation SiC devices.

Advantages

1. Low BPD Density:

   • Optimized PVT growth, seed bonding, and cooling processes reduce basal plane dislocation density, improving device reliability.

   • Experimental results show BPD densities can be reduced below 1000 cm⁻² in large-diameter wafers.

2. High Thermal & Electrical Performance:

   • High thermal conductivity and dielectric properties enable efficient heat spreading and stable operation under high voltage.

   • High electron mobility and wide bandgap ensure low energy loss and superior high-temperature performance.

3. Large 12-Inch Wafer Size:

   • Supports next-generation power modules and LED substrates.

   • Customizable thickness, orientation, and resistivity for specific device requirements.

4. High-Quality Surface & Polishing:

   • Single-side or double-side polished options with ultra-low surface roughness (Ra ≤ 5Å).

   • Minimizes defects and maximizes epitaxial growth uniformity.

5. Cleanroom Packaging:

   • Each wafer individually packed in a 100-grade clean environment to prevent contamination.

ZMSH Commitment

ZMSH is dedicated to providing high-performance 12-inch SiC wafers with controlled dislocation density and high reproducibility. Our wafers are ideal for power electronics, optoelectronics, and next-generation semiconductor research. We support customized specifications to meet your industrial or research application needs.

FAQ

Q1: What is the typical basal plane dislocation (BPD) density of ZMSH 12-inch SiC wafers?
A1: Our 12-inch 4H-SiC and 6H-SiC wafers are grown using optimized PVT processes with controlled cooling rates, seed bonding, and graphite crucible selection. This ensures BPD density can be reduced below 1000 cm⁻², which significantly improves device reliability in high-power and high-voltage applications.

Q2: Can the wafer thickness, orientation, or resistivity be customized?
A2: Yes. ZMSH supports fully customizable wafer specifications, including thickness (0.35–1.0 mm), off-axis orientation (<0001> 4° or other angles), and resistivity (N-type 0.015–0.028 Ω·cm or semi-insulating >1×10⁵ Ω·cm). This flexibility allows wafers to meet the specific requirements of power devices, LEDs, or experimental research.

Q3: How do ZMSH 12-inch SiC wafers benefit GaN-based LED and laser diode applications?
A3: SiC substrates provide excellent lattice matching and thermal compatibility with GaN epitaxial layers. Compared to sapphire, SiC offers higher thermal conductivity, conductive substrate capability for vertical device structures, and no current diffusion layer, resulting in higher light extraction efficiency, better heat dissipation, and longer device lifespan.