SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pcs per month |
| Delivery Time | 2-4 weeks |
| Packaging Details | package in 100-grade cleaning room |
| Type | 4H-SiC |
| Standard Dimensions | 10×10 mm (±0.05mm tolerance) |
| Thickness Options | 100-500 μm |
| Resistivity | 0.01-0.1 Ω·cm |
| Thermal Conductivity | 490 W/m·K (typical) |
| ApplicationsDevices | New Energy Vehicle Powertrains, Aerospace Electronics |
| Brand Name | ZMSH |
| Model Number | SiC Substrate 10×10mm |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pcs per month |
| Delivery Time | 2-4 weeks | Packaging Details | package in 100-grade cleaning room |
| Type | 4H-SiC | Standard Dimensions | 10×10 mm (±0.05mm tolerance) |
| Thickness Options | 100-500 μm | Resistivity | 0.01-0.1 Ω·cm |
| Thermal Conductivity | 490 W/m·K (typical) | ApplicationsDevices | New Energy Vehicle Powertrains, Aerospace Electronics |
| Brand Name | ZMSH | Model Number | SiC Substrate 10×10mm |
| Certification | rohs | Place of Origin | CHINA |
| High Light | 4H-N SiC substrate wafer ，10x10mm SiC power electronics wafer ，SiC substrate for power electronics | ||
High-Performance Semiconductor Solution for Advanced Electronics
The 10×10mm 4H-N type silicon carbide (SiC) substrateis a high-performance semiconductor material based on third-generation SiC technology. Manufactured via Physical Vapor Transport (PVT)or High-Temperature Chemical Vapor Deposition (HTCVD), it offers exceptional thermal, electrical, and mechanical properties. With a dimensional tolerance of ±0.05 mmand surface roughness Ra < 0.5 nm, it is ideal for prototyping power devices, RF components, and optoelectronic systems. The substrate is available in 4H-SiCor 6H-SiCpolytypes, with N-type or P-type doping options, and undergoes rigorous quality inspections (e.g., XRD, optical microscopy) to ensure semiconductor-grade reliability.
Table 1: Key Parameters of 10×10mm 4H-N Type SiC Substrate
|
Parameter Category |
Specifications |
|---|---|
|
Material Type |
4H-SiC, N-type doped |
|
Dimensions |
10×10 mm (±0.05 mm tolerance) |
|
Thickness Options |
100–500 μm |
|
Surface Roughness |
Ra < 0.5 nm (polished, epitaxial-ready) |
|
Electrical Properties |
Resistivity: 0.01–0.1 Ω·cm; Carrier Concentration: 1×10¹⁸–5×10¹⁹ cm⁻³ |
|
Crystal Orientation |
(0001) ±0.5° (standard) |
|
Thermal Conductivity |
490 W/m·K (typical) |
|
Defect Density |
Micropipe Density: <1 cm⁻²; Dislocation Density: <10⁴ cm⁻² |
|
Customization |
Non-standard shapes, doping profiles, backside metallization |
Superior Thermal Management: With a thermal conductivity of 490 W/m·K(3× higher than silicon), the substrate enables efficient heat dissipation, reducing device operating temperatures and enhancing system longevity.
High Voltage Tolerance: A breakdown field strength of 2–4 MV/cm(10× higher than silicon) supports high-power applications, while a high electron saturation drift velocity (2×10⁷ cm/s) benefits high-frequency designs.
Mechanical Robustness: Vickers hardness of 28–32 GPaand flexural strength >400 MPaprovide 5–10× longer service life than conventional materials.
Environmental Stability: Operational temperatures up to 600°Cand a low thermal expansion coefficient (4.0×10⁻⁶/K) ensure performance in extreme conditions.
Table 2: Core Application Areas of 10×10mm SiC Substrates
|
Application Field |
Use Cases |
Benefits |
|---|---|---|
|
Electric Vehicles |
Powertrain inverters, SiC MOSFETs/ diodes |
3–5% higher inverter efficiency, extended EV range |
|
5G Infrastructure |
RF power amplifiers (mmWave bands: 24–39 GHz) |
>20% reduction in base station power consumption |
|
Smart Grids |
HVDC systems, solid-state transformers |
Improved power transmission efficiency |
|
Industrial Automation |
High-power motor drives (switching frequency >100 kHz) |
50% smaller device size |
|
Aerospace & Defense |
Satellite power systems, engine controls |
Reliability in extreme temperatures/radiation |
|
Optoelectronics |
UV LEDs, laser diodes |
Optimal substrate due to wide bandgap and thermal stability |
Geometry: Round, rectangular, or user-defined shapes.
Doping: N-type or P-type with concentrations from 10¹⁵ to 10¹⁹ cm⁻³.
Thickness: 100–500 μm, with optional backside metallization for improved integration.
The 10×10mm 4H-N type SiC substrate combines advanced material properties with flexibility in design, making it a critical enabler for next-generation electronics in automotive, communication, and energy systems. Its compatibility with high-temperature, high-frequency, and high-power applications positions it as a cornerstone of semiconductor innovation.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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