Custom 4-Inch (100mm) Silicon Wafers: 350μm Thickness, Orientation, DSP/SSP, N

Silicon wafers are thin, flat disks made from highly purified single-crystal silicon, widely utilized in the semiconductor industry. These wafers serve as the fundamental substrate for producing integrated circuits and a variety of electronic devices.

Silicon wafers typically range in diameter from 2 inches (50 mm) to 12 inches (300 mm), with thicknesses varying from 200 µm to 775 µm depending on the size. They are produced using the Czochralski (CZ) or Float-Zone (FZ) methods and are polished to achieve a mirror-like surface with minimal roughness. Doping with elements such as boron (for P-type) or phosphorus (for N-type) modifies their electrical properties.

Key properties of silicon wafers include high thermal conductivity, a low coefficient of thermal expansion, and excellent mechanical strength. They can also feature epitaxial layers or thin silicon dioxide layers to enhance electrical properties and insulation. These wafers are processed and handled in cleanroom environments to maintain purity, ensuring high yield and reliability in semiconductor manufacturing.

Product Overview

Si wafers, also referred to as silicon substrates, are available in various crystal orientations (including <100>, <110>, and <111>) and standard sizes from 1 inch to 4 inches. These monocrystalline silicon substrates are produced with high purity and can be customized according to specific design requirements.

Key Features

• Manufactured from high-purity monocrystalline silicon (99.999%)
• Supports custom designs and artwork
• Resistivity varies based on doping type
• Available in P-type (boron-doped) or N-type (phosphorus/arsenic-doped)
• Widely applied in integrated circuits (ICs), photovoltaics, and MEMS devices

Detailed Description

Silicon wafers are ultra-thin, flat disks fabricated from highly refined single-crystal silicon. They serve as fundamental substrates in semiconductor manufacturing for producing integrated circuits and electronic components. Standard diameters range from 2 inches (50 mm) to 12 inches (300 mm), with thicknesses varying between 200μm and 775μm. Produced via Czochralski (CZ) or Float-Zone (FZ) methods, the wafers undergo precision polishing to achieve mirror-like surfaces with minimal roughness. Doping with elements like boron (P-type) or phosphorus (N-type) allows tailored electrical characteristics. Key attributes include high thermal conductivity, low thermal expansion, and robust mechanical strength. Optional epitaxial layers or silicon dioxide coatings can enhance performance. All processing occurs in controlled cleanroom environments to ensure purity and reliability.

Technical Specifications

Samples of the Si Wafer

4-inch Si wafer with a diameter of 100 mm, thickness of 350 µm, orientation <100>, DSP/SSP options, and customized N-type or P-type variants.

If you have any other requirements, please feel free to contact us for customization.

Our company, ZMSH, specializes in the research, production, processing, and sales of semiconductor substrates and optical crystal materials. With an experienced engineering team, management expertise, precision processing equipment, and testing instruments, we possess strong capabilities in processing non-standard products. We can research, develop, and design various new products according to customer needs. Adhering to the principle of "customer-centered, quality-based," we strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.

1. Q: What is the difference between P-type and N-type Si wafers?
   A: P-type silicon wafers have holes as the main charge carriers, while N-type wafers have electrons. There are minimal differences in other physical properties like resistivity.
2. Q: What are the main differences between Si wafers, SiO₂ wafers, and SiC wafers?
   A: Silicon (Si) wafers are pure silicon substrates primarily used in semiconductor devices. SiO₂ wafers have a silicon dioxide layer on the surface, often used as an insulating layer. Silicon carbide (SiC) wafers are composed of a compound of silicon and carbon, offering higher thermal conductivity and durability, making them suitable for high-power and high-temperature applications.