| Payment Terms | T/T,Western Union |
| Supply Ability | 1000pc/month |
| Delivery Time | 1-4weeks |
| Packaging Details | single wafer container box or 25pc cassette box |
| Materials | SIC crystal |
| type | 4h-n |
| purity | 99.9995% |
| resistivity | 0.015~0.028ohm.cm |
| size | 2-8inch 2inch, 3inch ,4inch ,6inch ,8inch |
| Application | for SBD, MOS Device |
| TTV | ≤ 15um |
| bow | ≤ 25um |
| warp | ≤ 5um |
| Brand Name | ZMSH |
| Model Number | 4h-n |
| Certification | CE |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T,Western Union | Supply Ability | 1000pc/month |
| Delivery Time | 1-4weeks | Packaging Details | single wafer container box or 25pc cassette box |
| Materials | SIC crystal | type | 4h-n |
| purity | 99.9995% | resistivity | 0.015~0.028ohm.cm |
| size | 2-8inch 2inch, 3inch ,4inch ,6inch ,8inch | Application | for SBD, MOS Device |
| TTV | ≤ 15um | bow | ≤ 25um |
| warp | ≤ 5um | Brand Name | ZMSH |
| Model Number | 4h-n | Certification | CE |
| Place of Origin | CHINA | ||
| High Light | 4H-N SiC Substrates ,Semi-Insulating SiC Substrates | ||
4H-N type and semi-insulating silicon carbide (SiC) substrates are high-purity single-crystal wafers manufactured using the Physical Vapor Transport (PVT) method. These substrates exhibit outstanding electrical and thermal properties, including wide bandgap characteristics, high breakdown electric field, and exceptional thermal conductivity. Ideal for epitaxial growth of SiC or III-Nitride materials, they serve as key foundational components in high-power, high-frequency, and high-temperature electronic devices.
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| Parameter | Specification | Notes |
|---|---|---|
| Wafer Diameter | 2 inch (50.8 mm) / 4 inch (101.6 mm) | Custom diameters available |
| Thickness | 330–500 µm (±25 µm tolerance) | Custom thickness on request |
| Orientation Accuracy | On-axis <±0.5°; Off-axis 4°±0.5° | Toward [11-20] |
| Micropipe Density | Zero-grade: ≤1 cm⁻²; Production-grade: ≤5 cm⁻² | Measured by optical microscopy |
| Surface Roughness | Polished: Ra ≤ 1 nm; CMP: Ra ≤ 0.5 nm | AFM verified |
The silicon carbide industry encompasses substrate preparation, epitaxial growth, device fabrication, and end-use applications. Using the PVT method, high-quality monocrystalline SiC substrates are produced, serving as the base for epitaxial deposition (via CVD) and subsequent device manufacturing. ZMSH supplies 100 mm and 150 mm SiC wafers that meet stringent industrial requirements for high-power and high-frequency applications.
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Q: What is the minimum order quantity (MOQ)?
A: Standard products: 3 pieces; Customized specifications: 10 pieces and above.
Q: Can I request customized electrical or geometric parameters?
A: Yes, we support customization of resistivity, thickness, orientation, and surface finish.
Q: What is the typical delivery time?
A: Standard items: 5 working days; Customized orders: 2–3 weeks; Special specifications: ~4 weeks.
Q: What documentation is provided with the order?
A: Each shipment includes a test report covering resistivity mapping, geometric parameters, and micropipe density.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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