SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pcs per month |
| Delivery Time | 2-4 weeks |
| Packaging Details | package in 100-grade cleaning room |
| Type | 4H-SiC |
| Standard Dimensions | 10×10 mm (±0.05mm tolerance) |
| Thickness Options | 100-500 μm |
| Resistivity | 0.01-0.1 Ω·cm |
| Thermal Conductivity | 490 W/m·K (typical) |
| ApplicationsDevices | New Energy Vehicle Powertrains, Aerospace Electronics |
| Brand Name | ZMSH |
| Model Number | SiC Substrate 10×10mm |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pcs per month |
| Delivery Time | 2-4 weeks | Packaging Details | package in 100-grade cleaning room |
| Type | 4H-SiC | Standard Dimensions | 10×10 mm (±0.05mm tolerance) |
| Thickness Options | 100-500 μm | Resistivity | 0.01-0.1 Ω·cm |
| Thermal Conductivity | 490 W/m·K (typical) | ApplicationsDevices | New Energy Vehicle Powertrains, Aerospace Electronics |
| Brand Name | ZMSH | Model Number | SiC Substrate 10×10mm |
| Certification | rohs | Place of Origin | CHINA |
| High Light | 4H N Type SiC Substrate ，N Type SiC Substrate 10x10mm ，Power Electronics SiC Substrate | ||
The 4H-N type SiC 10*10 mm small wafer is a high-performance semiconductor substrate based on silicon carbide (SiC), a third-generation semiconductor material. Fabricated via Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD), it is available in 4H-SiC or 6H-SiC polytypes and N-type or P-type doping configurations. With dimensional tolerances within ±0.05 mm and surface roughness Ra < 0.5 nm, each wafer is epitaxial-ready and undergoes rigorous inspection, including XRD crystallinity validation and optical microscopy defect analysis.
| Parameter | Specification |
|---|---|
| Material Type | 4H-SiC (N-type doped) |
| Dimensions | 10*10 mm (±0.05 mm) |
| Thickness | 100–500 μm |
| Surface Roughness | Ra < 0.5 nm (polished) |
| Resistivity | 0.01–0.1 Ω·cm |
| Crystal Orientation | (0001) ±0.5° |
| Thermal Conductivity | 490 W/m·K |
| Defect Density | Micropipes: <1 cm⁻²; Dislocations: <10⁴ cm⁻² |
Q: What are typical applications of 10*10 mm SiC wafers?
A: Ideal for prototyping power devices (MOSFETs/diodes), RF components, and high-temperature optoelectronics.
Q: How does SiC compare to silicon?
A: SiC offers 10* higher breakdown voltage, 3* better thermal conductivity, and superior high-temperature performance.
ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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