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SHANGHAI FAMOUS TRADE CO.,LTD

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China ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV)
China ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV)

  1. China ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV)
  2. China ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV)
  3. China ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV)

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV)

  1. MOQ: 5
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T
Delivery Time 2-4weeks
Packaging Details package in 100-grade cleaning room
Size 6 inch
Thickness 200-300 um
Material 4H-SiC
Conductivity Type N-type (doped with Nitrogen)
Resistivity ANY
TTV ≤ 10 µm
BOW/Warp ≤ 20 µm
Packaging vacuum sealed
Brand Name ZMSH
Model Number 4H 6inch SiC Epitaxial Wafer
Certification rohs
Place of Origin CHINA

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Product Specification

Payment Terms T/T Delivery Time 2-4weeks
Packaging Details package in 100-grade cleaning room Size 6 inch
Thickness 200-300 um Material 4H-SiC
Conductivity Type N-type (doped with Nitrogen) Resistivity ANY
TTV ≤ 10 µm BOW/Warp ≤ 20 µm
Packaging vacuum sealed Brand Name ZMSH
Model Number 4H 6inch SiC Epitaxial Wafer Certification rohs
Place of Origin CHINA
High Light 6inch SiC epitaxial waferSiC wafer for UHV MOS device100μm SiC substrate with warranty

SiC Epi Wafer Overview​

 

 

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

 

 

 

The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV, >10 kV) metal-oxide-semiconductor field-effect transistors (MOSFETs), junction barrier Schottky diodes (JBS), and other power devices. This product offers three epitaxial layer thicknesses (​​100μm, 200μm, 300μm​​) to address applications ranging from low-voltage to UHV scenarios, suitable for new energy vehicles (NEVs), industrial power systems, and smart grid technologies.

 

 


 

SiC epitaxial wafer Characteristic

 

1. High Breakdown Voltage & Low On-Resistance​​

  • Achieves balanced breakdown voltage (BV) and specific on-resistance (R<sub>sp</sub>) via ​​deep doping pillar structures​​ (alternating n-type and p-type columns). For example, 5 kV-class SJ MOSFETs exhibit R<sub>sp</sub> as low as ​​9.5 mΩ·cm²​​ at room temperature, rising to ​​25 mΩ·cm²​​ at 200°C.
  • Adjustable epitaxial layer thickness and doping concentration (e.g., 100μm layer for 3.3 kV devices, 300μm layer supporting >15 kV applications).

 

2. Exceptional Thermal Stability & Reliability​​

  • Leverages ​​high thermal conductivity (4.9 W/cm·K)​​ and ​​wide bandgap (3.2 eV)​​ to operate stably above ​​200°C​​, minimizing thermal management complexity.
  • Employs ​​ultra-high energy ion implantation (UHEI)​​ (up to 20 MeV) to reduce lattice damage, combined with ​​1700°C annealing​​ to repair defects, achieving leakage current density < ​​0.1 mA/cm²​​.

3. Low Defect Density & High Uniformity​​

  • Optimized growth parameters (C/Si ratio, HCl doping strategy) yield surface roughness (RMS) of ​​0.4–0.8 nm​​ and macro-defect density < ​​1 cm⁻²​​.
  • Doping uniformity (CV testing) ensures standard deviation < ​​15%​​, guaranteeing batch consistency.

 

4. Compatibility with Advanced Fabrication Processes​​

  • Supports ​​trench filling​​ and ​​deep doping pillar architectures​​, enabling lateral depletion designs for UHV MOSFETs with breakdown voltages exceeding ​​20 kV​​.
 

 


 

​​4H-SiC Epitaxial Wafer Applications​​

 

1.Ultra-High Voltage Power Devices​​

  • New Energy Vehicles (NEVs)​​: Main drive inverters and onboard chargers (OBC) for 800V platforms, enhancing efficiency by ​​10–15%​​ and enabling fast charging.
  • ​​Industrial Power Systems​​: High-frequency switching (MHz range) in photovoltaic inverters and solid-state transformers (SSTs), reducing losses by >30%.

 

2.Smart Grids & Energy Storage​​

  • Grid-forming energy storage PCS for weak-grid stabilization.
  • High-voltage DC transmission (HVDC) and smart distribution equipment, achieving >99% energy conversion efficiency.

 

3.Rail Transit & Aerospace​​

  • Traction inverters and auxiliary power systems for extreme temperatures (-60°C to 200°C) and vibration resistance.

 

4.Research & High-Tech Manufacturing​​

  • Core material for ultra-heavy element (e.g., Nh) detectors, enabling high-temperature (300°C) α-particle detection with energy resolution < ​​3%​​.

 

 

 

 


 

4H-SiC Epitaxial Wafer parameters

 
 
Parameter Specification / Value
Size 6 inch
Material 4H-SiC
Conductivity Type N-type (doped with Nitrogen)
Resistivity ANY
Off-Axis Angle 4°±0.5° off (typically toward [11-20] direction)
Crystal Orientation (0001) Si-face
Thickness 200-300 um
Surface Finish Front CMP polished (epi-ready)
Surface Finish Back lapped or polished (fastest option)
TTV ≤ 10 µm
BOW/Warp ≤ 20 µm
Packaging vacuum sealed
QTY 5 pcs
 
 

 

More samples of SiC Wafers

 

 

 

 

*We accept customized one, please feel free to contact us about your requirements.

 

 


 

Recommended SiC Products

 
 

 

 


 

SiC Epi Wafer FAQ

 

 

1. Q: What is the typical thickness range for 6-inch 4H-SiC epitaxial wafers?​​

     A:​​ The typical thickness ranges from ​​100–500 μm​​ to support ultra-high-voltage (≥10 kV) MOSFET applications, balancing breakdown voltage and thermal management.

 

 

2. Q: What industries use 6-inch 4H-SiC epitaxial wafers?​​

     A:​​ They are critical for ​​smart grids, EV inverters, industrial power systems, and aerospace​​, enabling high efficiency and reliability in extreme conditions.

 

 


Tags: #​​6inch, #Custom, #​​4H-SiC Epitaxial Wafer, #4H-N Type, #100μm/200μm/300μm​​, #Ultra-High Voltage (UHV), #MOS Device, #SiC Crystal, #Silicon Carbide Substrate, #100-500μm

 

 
 

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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