Payment Terms | T/T |
Delivery Time | 2-4weeks |
Packaging Details | package in 100-grade cleaning room |
Size | 6 inch |
Thickness | 200-300 um |
Material | 4H-SiC |
Conductivity Type | N-type (doped with Nitrogen) |
Resistivity | ANY |
TTV | ≤ 10 µm |
BOW/Warp | ≤ 20 µm |
Packaging | vacuum sealed |
Brand Name | ZMSH |
Model Number | 4H 6inch SiC Epitaxial Wafer |
Certification | rohs |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T | Delivery Time | 2-4weeks |
Packaging Details | package in 100-grade cleaning room | Size | 6 inch |
Thickness | 200-300 um | Material | 4H-SiC |
Conductivity Type | N-type (doped with Nitrogen) | Resistivity | ANY |
TTV | ≤ 10 µm | BOW/Warp | ≤ 20 µm |
Packaging | vacuum sealed | Brand Name | ZMSH |
Model Number | 4H 6inch SiC Epitaxial Wafer | Certification | rohs |
Place of Origin | CHINA | ||
High Light | 6inch SiC epitaxial wafer ,SiC wafer for UHV MOS device ,100μm SiC substrate with warranty |
4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV, >10 kV) metal-oxide-semiconductor field-effect transistors (MOSFETs), junction barrier Schottky diodes (JBS), and other power devices. This product offers three epitaxial layer thicknesses (100μm, 200μm, 300μm) to address applications ranging from low-voltage to UHV scenarios, suitable for new energy vehicles (NEVs), industrial power systems, and smart grid technologies.
1. High Breakdown Voltage & Low On-Resistance
2. Exceptional Thermal Stability & Reliability
3. Low Defect Density & High Uniformity
4. Compatibility with Advanced Fabrication Processes
1.Ultra-High Voltage Power Devices
2.Smart Grids & Energy Storage
3.Rail Transit & Aerospace
4.Research & High-Tech Manufacturing
Parameter | Specification / Value |
Size | 6 inch |
Material | 4H-SiC |
Conductivity Type | N-type (doped with Nitrogen) |
Resistivity | ANY |
Off-Axis Angle | 4°±0.5° off (typically toward [11-20] direction) |
Crystal Orientation | (0001) Si-face |
Thickness | 200-300 um |
Surface Finish Front | CMP polished (epi-ready) |
Surface Finish Back | lapped or polished (fastest option) |
TTV | ≤ 10 µm |
BOW/Warp | ≤ 20 µm |
Packaging | vacuum sealed |
QTY | 5 pcs |
*We accept customized one, please feel free to contact us about your requirements.
1. Q: What is the typical thickness range for 6-inch 4H-SiC epitaxial wafers?
A: The typical thickness ranges from 100–500 μm to support ultra-high-voltage (≥10 kV) MOSFET applications, balancing breakdown voltage and thermal management.
2. Q: What industries use 6-inch 4H-SiC epitaxial wafers?
A: They are critical for smart grids, EV inverters, industrial power systems, and aerospace, enabling high efficiency and reliability in extreme conditions.
Tags: #6inch, #Custom, #4H-SiC Epitaxial Wafer, #4H-N Type, #100μm/200μm/300μm, #Ultra-High Voltage (UHV), #MOS Device, #SiC Crystal, #Silicon Carbide Substrate, #100-500μm
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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