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SHANGHAI FAMOUS TRADE CO.,LTD

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China High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole
China High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole

  1. China High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole
  2. China High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole
  3. China High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole

High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole

  1. MOQ: 10
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Payment Terms T/T
Delivery Time 2-4 Weeks
Material Single Crystal Silicon
Purity ≥ 99.999% (5N)
Max Diameter Up to 480 mm
Thickness Custom (5–50 mm)
Resistivity (Low) < 0.02 Ω·cm
Resistivity (Medium) 1 – 4 Ω·cm
Resistivity (High) 70 – 90 Ω·cm
Gas Hole Diameter 0.2 – 0.8 mm (customizable)
Brand Name ZMSH
Place of Origin SHANGHAI,CHINA

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Product Specification

Payment Terms T/T Delivery Time 2-4 Weeks
Material Single Crystal Silicon Purity ≥ 99.999% (5N)
Max Diameter Up to 480 mm Thickness Custom (5–50 mm)
Resistivity (Low) < 0.02 Ω·cm Resistivity (Medium) 1 – 4 Ω·cm
Resistivity (High) 70 – 90 Ω·cm Gas Hole Diameter 0.2 – 0.8 mm (customizable)
Brand Name ZMSH Place of Origin SHANGHAI,CHINA
High Light High Purity (5N) Silicon ElectrodeCustomizable Gas Hole Diameter Semiconductor ElectrodeMultiple Resistivity Options Single Crystal Silicon Electrode

The High-Purity Single Crystal Silicon Electrode is a semiconductor-grade plasma chamber component designed for use in advanced etching, deposition, and surface modification equipment. Manufactured from ultra-clean single crystal silicon (5N purity), it provides stable electrical performance, excellent plasma compatibility, and precise gas/electric field control in critical semiconductor processes.

As a core consumable inside plasma reactors, silicon electrodes directly influence plasma density, uniformity, and wafer process consistency. Their material compatibility with silicon-based manufacturing environments also helps minimize cross-contamination risk, making them a widely adopted standard in semiconductor fabs.

Role of Silicon Electrodes in Plasma Systems

In semiconductor plasma equipment (ICP, RIE, PECVD, CVD), silicon electrodes function as:

  • Plasma generation and stabilization components
  • RF and electric field distribution interfaces
  • Gas flow and plasma uniformity regulators
  • Chamber internal structural elements

During operation, electrodes are continuously exposed to:

  • High-energy ion bombardment
  • Fluorine-based gases (CF₄, SF₆, NF₃)
  • Chlorine-based chemistries (Cl₂, HBr)
  • Elevated thermal conditions

Over time, controlled material erosion occurs, making silicon electrodes a critical consumable part in semiconductor manufacturing systems.

Key Advantages of Single Crystal Silicon Electrodes

High Purity Semiconductor-Grade Material

Produced from 5N high-purity single crystal silicon, ensuring:

  • Minimal metallic contamination
  • Stable electrical characteristics
  • Compatibility with advanced wafer processes

Excellent Plasma Compatibility

Silicon electrodes exhibit stable behavior in plasma environments, helping:

  • Reduce particle contamination
  • Maintain wafer yield stability
  • Improve process repeatability

Multiple Resistivity Options

Different resistivity grades allow process optimization for:

  • Plasma density control
  • RF power coupling efficiency
  • Electrical field uniformity

Precision Gas Distribution Design

Customizable hole patterns enable:

  • Uniform gas flow distribution
  • Improved plasma consistency across wafer surface
  • Enhanced etching and deposition accuracy

Semiconductor-Grade Machining Accuracy

High-precision fabrication ensures:

  • Tight dimensional control (<10 μm)
  • Stable integration with chamber hardware
  • Consistent wafer-to-wafer performance

Technical Specifications

Parameter Specification
Material Single Crystal Silicon
Purity ≥ 99.999% (5N)
Max Diameter Up to 480 mm
Thickness Custom (5–50 mm)
Resistivity (Low) < 0.02 Ω·cm
Resistivity (Medium) 1 – 4 Ω·cm
Resistivity (High) 70 – 90 Ω·cm
Resistivity Uniformity < 5% (RRG)
Gas Hole Diameter 0.2 – 0.8 mm (customizable)
Surface Finish Polished / Lapped / Ground
Surface Roughness Ra ≤ 0.8 μm (polished lower)
Machining Accuracy < 10 μm
Flatness ≤ 30 μm (size dependent)
Edge Design Custom chamfer / radius
Quality Standard No cracks, chips, or contamination

Semiconductor Applications

Silicon electrodes are widely used in:

  • ICP and RIE plasma etching systems
  • CVD and PECVD deposition equipment
  • Wafer surface treatment processes
  • Plasma distribution systems
  • Semiconductor chamber internal assemblies
  • Gas flow and RF coupling structures

They are suitable for both mature semiconductor nodes and standard high-volume manufacturing environments.

Silicon vs SiC Electrodes (Selection Insight)

Feature Silicon Electrode SiC Electrode
Cost Lower Higher
Machinability Excellent More difficult
Plasma Resistance Moderate High
Lifetime Medium Long
Process Compatibility Excellent (Si-based fabs) Excellent (harsh environments)
Best Use Case Standard processes High-end / aggressive plasma

Silicon electrodes are often preferred when cost efficiency and silicon-process compatibility are primary considerations.

Why Choose Silicon Electrodes?

Silicon electrodes remain widely used because they offer:

  • Strong compatibility with silicon wafer manufacturing
  • Balanced performance and cost efficiency
  • Easier customization and fabrication flexibility
  • Reliable plasma behavior in standard process conditions

For applications requiring extreme plasma resistance or extended lifetime, SiC-based solutions may be considered instead.

Customization Options

Available customization includes:

  • Diameter and thickness optimization
  • Resistivity tuning (low / medium / high)
  • Gas hole pattern design
  • Surface finishing (polished, lapped, ground)
  • Edge shaping and chamfer design
  • OEM drawing-based manufacturing

FAQ

Q1: Is the silicon electrode a consumable part?

Yes. It is a critical consumable in plasma systems and gradually wears under ion bombardment and chemical exposure.

Q2: How do I choose resistivity?

Low resistivity is used for higher conductivity applications, while high resistivity is used for better electrical control and insulation in plasma environments.

Q3: Can this electrode be customized?

Yes. All dimensions, resistivity levels, gas distribution patterns, and surface finishes can be customized according to equipment requirements.

Q4: What is the main advantage of silicon over SiC?

Silicon electrodes are more cost-effective, easier to machine, and highly compatible with silicon-based semiconductor processes.


Related Product

CVD SiC Ring for Semiconductor Plasma Etching & Chamber Protection



Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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