SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pc/month |
| Delivery Time | in 30days |
| Packaging Details | customzied plastic box |
| Size | 2inch,4inch,6inch,5×5,10×10 |
| Dielectric Constant | 9.7 |
| Surface Hardness | HV0.3>2500 |
| Density | 3.21 G/cm3 |
| Thermal Expansion Coefficient | 4.5 X 10-6/K |
| Breakdown Voltage | 5.5 MV/cm |
| Applications | Communications, Radar systems |
| Brand Name | ZMSH |
| Model Number | 3C-N SiC |
| Certification | rohs |
| Place of Origin | CHINA |
View Detail Information
Explore similar products
High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon
Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2
2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For
Product Specification
| Payment Terms | T/T | Supply Ability | 1000pc/month |
| Delivery Time | in 30days | Packaging Details | customzied plastic box |
| Size | 2inch,4inch,6inch,5×5,10×10 | Dielectric Constant | 9.7 |
| Surface Hardness | HV0.3>2500 | Density | 3.21 G/cm3 |
| Thermal Expansion Coefficient | 4.5 X 10-6/K | Breakdown Voltage | 5.5 MV/cm |
| Applications | Communications, Radar systems | Brand Name | ZMSH |
| Model Number | 3C-N SiC | Certification | rohs |
| Place of Origin | CHINA | ||
| High Light | N-Type 3C-SiC production wafers ，5G power electronics SiC substrates ，Premium SiC wafers with warranty | ||
Boasting a remarkable electron mobility of 1,100 cm²/V·s, our 3C-SiC significantly eclipses standard 4H-SiC (900 cm²/V·s), translating to minimal conduction losses. Its 3.2 eV wide bandgap empowers the substrate to handle massive voltage loads up to 10 kV.
With a thermal conductivity rating of 49 W/m·K, it effortlessly surpasses conventional silicon. This allows devices to operate securely across extreme temperature spectrums, from cryogenic -200°C up to blistering 1,600°C environments.
Highly impervious to aggressive acids, strong alkalis, and intense ionizing radiation, making it the material of choice for nuclear infrastructure and deep-space aerospace modules.
| Parameter | Z-Grade (Zero MPD Production) | P-Grade (Standard Production) | D-Grade (Dummy Grade) |
|---|---|---|---|
| Diameter | 145.5 mm – 150.0 mm | ||
| Thickness | 350 μm ± 25 μm | ||
| Wafer Orientation | Off axis: 2.0°–4.0° toward [1120] ± 0.5° (4H/6H-P) On axis: <111> ± 0.5° (3C-N) | ||
| * Micropipe Density | 0 cm⁻² | ||
| * Resistivity (p-type 4H/6H-P) | ≤ 0.1 Ω·cm | ≤ 0.3 Ω·cm | |
| * Resistivity (n-type 3C-N) | ≤ 0.8 mΩ·cm | ≤ 1.0 mΩ·cm | |
| Primary Flat Orientation | 4H/6H-P: {1010} ± 5.0° | 3C-N: {110} ± 5.0° | ||
| Primary Flat Length | 32.5 mm ± 2.0 mm | ||
| Secondary Flat Length | 18.0 mm ± 2.0 mm | ||
| Secondary Flat Orientation | Silicon face up, 90° CW from Prime flat ± 5.0° | ||
| Edge Exclusion Area | 3 mm | 6 mm | |
| LTV / TIV / Bow / Warp | ≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm | ≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm | |
| * Roughness (Polish) | Ra ≤ 1 nm | ||
| * Roughness (CMP) | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Edge Cracks | None | Cum. length ≤ 10 mm, single ≤ 2 mm | |
| * Hex Plates | Cum. area ≤ 0.05% | Cum. area ≤ 0.1% | |
| * Polytype Areas | None | Cum. area ≤ 3% | |
| Visual Carbon Inclusions | None | Cum. area ≤ 0.05% | |
| # Si Surface Scratches | None | Cum. length ≤ 1 × wafer diameter | |
| Edge Chips | None permitted ≥ 0.2mm width/depth | Max 5 allowed, ≤ 1 mm each | |
| Si Surface Contamination | None | ||
| Packaging | Multi-wafer Cassette or Single Wafer Container | ||
Notes: Defects limits apply to the entire wafer surface except for the edge exclusion area. Scratches (*) should be checked on the Silicon face only under High Intensity Light.
Q1: What exactly is a 3C-SiC substrate?
A: 3C-SiC refers to cubic silicon carbide. It is a highly specialized semiconductor material characterized by a cubic crystalline structure. It delivers phenomenal electron mobility (1,100 cm²/V·s) and robust thermal conductivity (49 W/m·K), making it the premier choice for extreme-temperature and high-frequency circuitry.
Q2: Which industries primarily utilize 3C-SiC technology?
A: Because of its low signal loss and radiation hardness, 3C-SiC is heavily utilized in manufacturing 5G RF communication modules, high-efficiency Electric Vehicle (EV) inverters, and resilient electronics for aerospace and satellite applications.
Search Tags: #SiliconCarbideSubstrate #3C_N_Type_SIC #SemiconductorMaterials #3C_SiC_Substrate #ProductionGrade #5G_Communications #EV_Inverters
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
Get in touch with us
Leave a Message, we will call you back quickly!