Ultra-Large Square Sapphire Substrate 310 × 310 × 1 mm for Semiconductor &

Product Specification

Ultra-Large Square Sapphire Substrate 310 × 310 × 1 mm for Semiconductor & Aerospace Applications

Product Overview

The 310 × 310 × 1 mm Ultra-Large Square Sapphire Substrate represents the upper limit of current synthetic sapphire crystal growth and large-area precision machining technology. Manufactured from 99.99% high-purity single-crystal aluminum oxide (Al₂O₃), this sapphire plate delivers exceptional flatness, thermal stability, chemical resistance, and mechanical strength across an expansive surface area.

Unlike standard round sapphire wafers designed for direct semiconductor production, this product is primarily engineered as a carrier substrate, base plate, or large-area sapphire panel. It is widely used in GaN epitaxial processing, high-temperature semiconductor environments, advanced optical systems, and aerospace applications where dimensional stability and durability are critical.

Key Applications

• Semiconductor wafer carrier plates

  • GaN-on-Sapphire epitaxy (MOCVD)

  • High-temperature process handling

• Large-area optical windows and viewports

• Aerospace and vacuum observation windows

• Laser system base plates

• Precision bonding substrates

• Custom industrial and research sapphire platforms

Technical Specifications

Key Advantages

Ultra-Large Format Capability

Maintains excellent flatness and thickness uniformity at the 310 mm scale, enabling reliable performance in large-area applications.

Exceptional Mechanical Durability

With a Mohs hardness of 9, the sapphire surface resists scratching and wear during handling and high-load processing.

Superior Thermal Stability

Designed to withstand repeated high-temperature cycles commonly encountered in MOCVD and other epitaxial growth processes.

Optical-Grade Surface Quality

Double-side polishing achieves sub-nanometer surface roughness, making the plate ideal for optical windows and high-strength bonding applications.

Outstanding Chemical Resistance

Offers significantly higher durability than fused quartz or glass in corrosive and harsh process environments.

Manufacturing & Quality Control

• Large-scale sapphire boule growth

• Precision slicing and stress-relief processing

• Double-side polishing (DSP)

• Full-surface interferometric flatness inspection

• 100% visual and dimensional inspection prior to shipment

FAQ

Q1: Is this product a standard sapphire wafer?
No. This product is classified as an ultra-large sapphire substrate or carrier plate, not a standard semiconductor wafer. It is designed for support, optical, or structural applications.

Q2: Can you manufacture sizes larger than 310 mm?
Our current capability for square sapphire substrates ranges from 250 mm to 310 mm per side, depending on orientation and thickness.

Q3: Is it suitable for GaN epitaxial growth?
Yes. This sapphire substrate is widely used as a carrier plate for GaN-on-Sapphire epitaxial processes, especially in high-throughput MOCVD systems.

Q4: How is flatness guaranteed on such a large surface?
We use large-format double-side polishing equipment and verify each plate with laser interferometry to ensure λ/10 flatness at 633 nm.

Q5: How is the substrate packaged for shipping?
Each plate is packed in a custom shock-absorbing, high-cleanliness vacuum package designed to prevent damage during international transportation.