SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4 weeks |
| Material | Gallium Arsenide (GaAs) |
| Dopant | Zinc (Zn) |
| Wafer Type | P-Type Semiconductor Wafer |
| Growth Method | VGF |
| Crystal Structure | Zinc Blende |
| Crystal Orientation | (100) ± 0.5° |
| Misorientation | 50.8 ± 0.2 mm |
| Thickness | 220 – 350 ± 20 µm |
| Orientation Flat | 16 ± 1 mm |
| Identification Flat | 8 ± 1 mm |
| Flat / Notch Option | EJ, US, or Notch |
| Surface Finish | P/P or P/E |
| Carrier Concentration | (0.3 – 1.0) × 10¹⁸ cm⁻³ |
| Brand Name | ZMSH |
| Place of Origin | SHANGHAI,CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4 weeks |
| Material | Gallium Arsenide (GaAs) | Dopant | Zinc (Zn) |
| Wafer Type | P-Type Semiconductor Wafer | Growth Method | VGF |
| Crystal Structure | Zinc Blende | Crystal Orientation | (100) ± 0.5° |
| Misorientation | 50.8 ± 0.2 mm | Thickness | 220 – 350 ± 20 µm |
| Orientation Flat | 16 ± 1 mm | Identification Flat | 8 ± 1 mm |
| Flat / Notch Option | EJ, US, or Notch | Surface Finish | P/P or P/E |
| Carrier Concentration | (0.3 – 1.0) × 10¹⁸ cm⁻³ | Brand Name | ZMSH |
| Place of Origin | SHANGHAI,CHINA | ||
| High Light | 2-inch GaAs wafer for LED ，Zn-doped GaAs wafer ，GaAs wafer for laser diode | ||
The 2-inch Zn-doped Gallium Arsenide (GaAs) wafer is a high-quality p-type semiconductor wafer manufactured using the Vertical Gradient Freeze (VGF) crystal growth method. Zinc doping provides stable and uniform p-type electrical characteristics, enabling reliable performance in LED, laser diode, optoelectronic, and microelectronic device fabrication.
As a direct bandgap III–V semiconductor, GaAs offers high carrier mobility, fast electronic response, and excellent optical efficiency. This wafer is supplied with (100) crystal orientation, controlled carrier concentration, low etch pit density, and polished surface finishes, ensuring consistent process performance and high device yield. Tight control of flatness, bow, warp, and particle contamination supports advanced wafer processing and epitaxial growth using MBE or MOCVD techniques.
With optional orientation flats, notch configurations, and backside laser marking, the 2-inch Zn-doped GaAs wafer provides flexibility for different process flows and identification requirements. Its stable electrical properties and reliable surface quality make it suitable for both research and volume production environments in optoelectronic and high-frequency device manufacturing.
| Item | Specification |
|---|---|
| Material | Gallium Arsenide (GaAs) |
| Dopant | Zinc (Zn) |
| Wafer Type | P-Type Semiconductor Wafer |
| Growth Method | VGF |
| Crystal Structure | Zinc Blende |
| Crystal Orientation | (100) ± 0.5° |
| Misorientation | 2° / 6° / 15° off (110) |
| Diameter | 50.8 ± 0.2 mm |
| Thickness | 220 – 350 ± 20 µm |
| Orientation Flat | 16 ± 1 mm |
| Identification Flat | 8 ± 1 mm |
| Flat / Notch Option | EJ, US, or Notch |
| Surface Finish | P/P or P/E |
| Carrier Concentration | (0.3 – 1.0) × 10¹⁸ cm⁻³ |
| Resistivity | (0.8 – 9.0) × 10⁻³ Ω·cm |
| Hall Mobility | 1,500 – 3,000 cm²/V·s |
| Etch Pit Density | ≤ 5,000 cm⁻² |
| Total Thickness Variation | ≤ 10 µm |
| Bow / Warp | ≤ 30 µm |
| Particle Count | < 50 (≥ 0.3 µm per wafer) |
| Laser Marking | Backside or upon request |
| Packaging | Single wafer container or cassette, aluminum composite outer bag |
LED wafer processing
Laser diode wafer fabrication
Optoelectronic device wafers
RF and high-frequency electronic wafers
Is this GaAs wafer suitable for LED and laser diode manufacturing?
Yes. The Zn-doped p-type electrical characteristics, combined with (100) orientation and controlled carrier concentration, support stable light emission and consistent device performance in LED and laser diode manufacturing.
Can this wafer be used directly for epitaxial growth?
Yes. The wafer is supplied with polished surfaces, low particle contamination, and strict flatness control, allowing direct use in MBE or MOCVD epitaxial growth processes.
Can the wafer specifications be customized for different process requirements?
Yes. Options such as orientation flats, notch configuration, backside laser marking, surface finish, and selected electrical parameters can be adjusted upon request to meet specific equipment and process needs.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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