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SHANGHAI FAMOUS TRADE CO.,LTD

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GaAs Wafer

Manufacturer of a wide range of products which include Square Silicon Wafer with Film-Laminated Carrier for Advanced IC, Semiconductor,Custom 4-Inch (100mm) Silicon Wafers: 350μm Thickness, Orientation, DSP/SSP, N,2-Inch Zn-Doped...

Quality Square Silicon Wafer with Film-Laminated Carrier for Advanced IC, Semiconductor for sale

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Square Silicon Wafer with Film-Laminated Carrier for Advanced IC, Semiconductor

  1. MOQ: 10

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Payment Terms T/T
Delivery Time 2-4 Weeks
Material Prime Grade Monocrystalline Silicon
Wafer Type Square with Film-Laminated Carrier
Dimensions 2″ (50.8mm) standard; custom sizes available
Thickness Customizable up to 725 μm
Growth Method Czochralski (CZ)
TTV <0.3 μm
Surface Finish Single Side Polished (SSP) or Double Side Polished (DSP)
Carrier Film Protective laminated film, removable before processing
Brand Name ZMSH
Place of Origin SHANGHAI,CHINA

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Quality Custom 4-Inch (100mm) Silicon Wafers: 350μm Thickness, Orientation, DSP/SSP, N for sale

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Custom 4-Inch (100mm) Silicon Wafers: 350μm Thickness, Orientation, DSP/SSP, N

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Payment Terms T/T
Delivery Time 4-6 weeks
Material Si single crystal
Size 4 inch
Thickness 350 um
Crystal Orientation <100>
Density 2.4 g/cm3
Doping Type P type or N type
Brand Name ZMSH
Model Number Si wafer
Place of Origin China

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Quality 2-Inch Zn-Doped Gallium Arsenide (GaAs) Wafer for LED & Laser Diode Applications for sale

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2-Inch Zn-Doped Gallium Arsenide (GaAs) Wafer for LED & Laser Diode Applications

  1. MOQ: 100

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Payment Terms T/T
Delivery Time 2-4 weeks
Material Gallium Arsenide (GaAs)
Dopant Zinc (Zn)
Wafer Type P-Type Semiconductor Wafer
Growth Method VGF
Crystal Structure Zinc Blende
Crystal Orientation (100) ± 0.5°
Misorientation 50.8 ± 0.2 mm
Thickness 220 – 350 ± 20 µm
Orientation Flat 16 ± 1 mm
Identification Flat 8 ± 1 mm
Flat / Notch Option EJ, US, or Notch
Surface Finish P/P or P/E
Carrier Concentration (0.3 – 1.0) × 10¹⁸ cm⁻³
Brand Name ZMSH
Place of Origin SHANGHAI,CHINA

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Quality 6inch VGF Method N Type GaAs Substrates 2 degree Off 675um SSP Wafers for sale

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6inch VGF Method N Type GaAs Substrates 2 degree Off 675um SSP Wafers

  1. MOQ: 10pcs

  2. Price: By case

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Supply Ability 500pcs/month
Delivery Time 1-4weeks
Packaging Details PET film in 100-grade cleaning room
material MONOcrystal GaAs
industry semicondutor wafer For ld or led
application semiconductor substrate, led chip, optical glass window,device substrates
method CZ
size 2inch~6inch
Thickness 0.675mm
surface cmp/etched
doped Si-doped
MOQ 10PCS
Brand Name zmsh
Model Number 6INCH GaAs wafer
Certification ROHS
Place of Origin china

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Quality GaAs Laser Epitaxial Wafer Gallium Arsenide Wafer VCSEL/PD Expitaxial Wafer For Intelligent Sensing for sale

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GaAs Laser Epitaxial Wafer Gallium Arsenide Wafer VCSEL/PD Expitaxial Wafer For Intelligent Sensing

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Material Gallium Arsenide
Size 3inch/ 4inch/ 6inch
Thickness Customized
Dopant Si/ Zn
Orientation <100>
Type Prime
Brand Name ZMSH
Model Number GaAs wafer
Place of Origin China

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Quality Transparent Orange Undopped GaP Wafers P Type N Type 200um 350um 5G Light Emitting for sale

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Transparent Orange Undopped GaP Wafers P Type N Type 200um 350um 5G Light Emitting

  1. MOQ: 25pcs

  2. Price: Negotiation

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Payment Terms T/T
Delivery Time In 30 days
Packaging Details Customized Box
Material GaP Wafers
Diameter 6'' 8''
Thickness 200um 350um
Orientation (110)A 0°+0.2
Growth Method LPE
Refractive index 3.19
TTV 8um
Warp 8um
Bow 8um
Brand Name ZMSH
Model Number GaP Wafers
Certification ROHS
Place of Origin China

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Quality GaP Semi-Insulated Wafers P Type N Type 400um 500um Green LED Red Green Light Emission for sale

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GaP Semi-Insulated Wafers P Type N Type 400um 500um Green LED Red Green Light Emission

  1. MOQ: 25pcs

  2. Price: Negotiation

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Payment Terms T/T
Delivery Time In 30 days
Packaging Details Customized Box
Material GaP Wafers
Color Transparent Orange
Diameter 2'' 4''
Thickness 400um 500um
Orientation 100
Density 4.350 g/cm3
TTV 5um
Warp 5um
Bow 5um
Brand Name ZMSH
Model Number GaP Wafers
Certification ROHS
Place of Origin China

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Quality 2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED for sale

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2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED

  1. MOQ: 10pcs

  2. Price: By case

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Supply Ability 500pcs/month
Delivery Time 1-4weeks
Packaging Details PET film in 100-grade cleaning room
material MONOcrystal GaAs
industry semicondutor wafer For ld or led
application semiconductor substrate, led chip, optical glass window,device substrates
method CZ
size 2inch~6inch
Thickness 0.425mm
surface cmp/etched
doped Si-doped
MOQ 10PCS
grade research grade/dummy grade
Brand Name zmsh
Model Number 6INCH GaAs wafer
Certification ROHS
Place of Origin china

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Quality 2

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2" S Doped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes

  1. MOQ: 25pcs

  2. Price: Negotiation

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Payment Terms T/T
Delivery Time In 30 days
Packaging Details Customized Box
Material GaP
Diameter 2'' 4'' 6'' 8''
Thickness 175um 225um
Dopant S
Grade A
Orientation (111)A 0°+0.2
Warp 10um
Bow 10um
TTv 10um
Brand Name ZMSH
Model Number GaP
Certification ROHS
Place of Origin China

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Quality 4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type for sale

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4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type

  1. MOQ: 10pcs

  2. Price: By case

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Supply Ability 500pcs/month
Delivery Time 1-4weeks
Packaging Details PET film in 100-grade cleaning room
material MONOcrystal GaAs
industry semicondutor wafer For ld or led
application semiconductor substrate, led chip, optical glass window,device substrates
method CZ
size 2inch~6inch
Thickness 0.425mm
surface cmp/etched
doped Si-doped
MOQ 10PCS
grade research grade/dummy grade
Brand Name zmsh
Model Number 6INCH GaAs wafer
Certification ROHS
Place of Origin china

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Get in touch with us

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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