High-Quality 4H-N Silicon Carbide Substrates (12-Inch/300mm) for High-Power

The 12-inch (300 mm) Silicon Carbide (SiC) substrate represents the current frontier in wide-bandgap (WBG) semiconductor technology. As the global industry transitions toward higher efficiency and higher power density, this large-diameter crystalline platform provides the essential foundation for next-generation power electronics and RF systems.

Key Strategic Advantages:

• Massive Throughput: Compared to conventional 150mm (6-inch) and 200mm (8-inch) wafers, the 300mm format offers more than 2.2x and 1.5x the usable surface area, respectively.
• Cost Optimization: Dramatically reduces the "cost-per-die" by maximizing the number of chips produced per single manufacturing cycle.
• Advanced Compatibility: Fully compatible with modern, fully automated 300mm semiconductor fabrication lines (Fabs), improving overall operational efficiency.

Product Grade Offerings:

1. 4H SiC N-type Production Grade: Engineered for high-yield, commercial-grade power device fabrication.
2. 4H SiC N-type Dummy Grade: A cost-effective solution for mechanical testing, equipment calibration, and thermal process validation.
3. 4H SiC Semi-Insulating (SI) Production Grade: Designed specifically for RF, radar, and microwave applications requiring extreme resistivity.

4H-N Silicon Carbide (Conductive Type)

The 4H-N polytype is a nitrogen-doped, hexagonal crystal structure known for its robust physical properties. With a wide bandgap of approximately 3.26 eV, it provides:

• High Breakdown Electric Field: Allows for the design of thinner, more efficient high-voltage devices.
• Superior Thermal Conductivity: Enables high-power modules to operate with simplified cooling systems.
• Extreme Thermal Stability: Maintains stable electrical parameters even in harsh environments exceeding 200°C.
• Low On-Resistance: Optimized for vertical power structures such as SiC MOSFETs and SBDs.

4H-SI Silicon Carbide (Semi-Insulating Type)

Our SI substrates are characterized by exceptionally high resistivity and minimal crystalline defects. These substrates are the preferred platform for GaN-on-SiC RF devices, providing:

• Excellent Electrical Isolation: Eliminates parasitic substrate conduction.
• Signal Integrity: Ideal for high-frequency microwave applications where low signal loss is critical.

Our manufacturing process is vertically integrated to ensure total quality control from raw material to finished wafer.

• Sublimation Growth (PVT Method): The 12-inch crystals are grown using the Physical Vapor Transport (PVT) method. High-purity SiC powder is sublimated at temperatures exceeding 2000°C under a precisely controlled vacuum and thermal gradient, recrystallizing onto a high-quality seed crystal.
• Precision Slicing & Edge Profiling: Post-growth, the crystal ingots are sliced into wafers using advanced multi-wire diamond sawing. Edge processing involves precision chamfering to prevent chipping and improve mechanical robustness during handling.
• Surface Engineering (CMP): Depending on the application, we employ Chemical Mechanical Polishing (CMP) on the Si-face. This process achieves an "Epi-Ready" surface with atomic-scale smoothness, removing all subsurface damage to facilitate high-quality epitaxial growth.

We utilize a multi-step inspection protocol to guarantee consistent performance in your production line:

1. Optical Metrology: Automated surface geometry measurement for TTV, bow, and warp.
2. Crystalline Evaluation: Polarized light inspection for polytype inclusions and stress analysis.
3. Surface Defect Scanning: High-intensity light and laser scattering to detect scratches, pits, and edge chips.
4. Electrical Characterization: Non-contact resistivity mapping across the central 8-inch and full 12-inch zones.

• Electric Vehicles (EV): Critical for traction inverters, 800V fast-charging piles, and onboard chargers (OBC).
• Renewable Energy: High-efficiency PV inverters, wind power converters, and energy storage systems (ESS).
• Smart Grid: High-voltage DC transmission (HVDC) and industrial motor drives.
• Telecommunications: 5G/6G macro stations, RF power amplifiers, and satellite links.
• Aerospace & Defense: High-reliability power supplies for extreme aerospace environments.