Product Specification

12-Inch 300mm 4H-N SiC Substrate for Power Semiconductor Manufacturing

1. Product Overview

The 12-inch (300 mm) silicon carbide (SiC) substrate is a large-diameter wide-bandgap semiconductor material designed for advanced power electronics and high-frequency device manufacturing. Compared with conventional 6-inch and 8-inch SiC wafers, the 12-inch format significantly increases usable wafer area, enabling higher device output per wafer, improved manufacturing efficiency, and reduced cost per die.

This specification covers three substrate grades:

• 4H SiC N-type Production Grade

• 4H SiC N-type Dummy Grade

• 4H SiC Semi-Insulating (SI) Production Grade

These grades support applications ranging from equipment calibration and process development to high-reliability device production.

2. Material Characteristics

4H SiC (N-Type)

4H-N silicon carbide is a nitrogen-doped, hexagonal crystal structure wide-bandgap semiconductor material with a bandgap of approximately 3.26 eV. It features:

• High breakdown electric field strength

• High thermal conductivity

• Stable electrical conductivity

• Excellent performance under high temperature and high voltage

N-type 4H-N SiC substrates are widely used in vertical power devices such as SiC MOSFETs and Schottky diodes.

4H SiC (Semi-Insulating)

Semi-insulating 4H SiC substrates exhibit extremely high resistivity and excellent electrical isolation. They are primarily used in RF, microwave, and high-frequency electronic applications where low parasitic conduction and high signal integrity are required.

3. Crystal Growth and Manufacturing Process

The 12-inch SiC substrates are grown using the Physical Vapor Transport (PVT) method. High-purity SiC source material sublimates under high temperature and controlled vacuum conditions and recrystallizes on a precisely oriented seed crystal. By carefully controlling the thermal field and growth environment, uniform crystal quality and low defect density are achieved across the entire 300 mm wafer.

After crystal growth, wafers undergo precision slicing, thickness control, edge processing, and surface finishing. Depending on the grade and application, the Si-face is processed by Chemical Mechanical Polishing (CMP) or grinding to meet flatness, roughness, and geometry requirements for semiconductor manufacturing.

4. 12-Inch SiC Substrate Specification Table

5. Quality Control and Inspection

All wafers are inspected using industry-standard metrology and optical inspection methods, including surface geometry measurement, electrical characterization, polarized light inspection for polytype evaluation, and high-intensity light inspection for crack detection. Defined edge exclusion zones are applied to ensure consistent device processing performance.

6. Typical Applications

• Power Electronics:
  SiC MOSFETs, Schottky diodes, power modules, inverters, and converters

• Electric Vehicles & New Energy Systems:
  Traction inverters, onboard chargers (OBC), DC-DC converters, fast-charging infrastructure

• RF & High-Frequency Devices:
  5G base stations, radar systems, satellite communications

• Industrial & Infrastructure Equipment:
  High-voltage power grids, industrial automation, motor drives

• Aerospace & Defense:
  High-temperature electronics and extreme-environment applications

7. FAQ

Q1: What is the purpose of N-type Dummy Grade wafers?
A: Dummy Grade wafers are used for equipment setup, tool calibration, and process verification, helping reduce costs during process development.

Q2: Why is a 12-inch SiC substrate advantageous?
A: The 12-inch format increases wafer area and chip output per wafer, improving manufacturing efficiency and reducing cost per device.

Q3: Can the specifications be customized?
A: Yes. Thickness, surface treatment, marking method, and inspection criteria can be customized upon request.

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12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications