Product Specification

2-Inch to 12-Inch 4H-N Type Silicon Carbide Wafer, SiC Substrate for Power Electronics and Semiconductor Applications

Our 2-inch to 12-inch 4H-N type silicon carbide wafers are high-quality SiC substrates designed for power electronics, semiconductor device fabrication, research and development, and advanced electronic applications. With excellent thermal conductivity, wide bandgap properties, high breakdown electric field, and strong chemical stability, 4H-N SiC wafers are widely used in high-power, high-voltage, high-frequency, and high-temperature environments.

As a professional semiconductor material supplier, we provide 4H-N type SiC wafers in multiple diameters, including 2-inch, 3-inch, 4-inch, 6-inch, 8-inch, and 12-inch options. Different thicknesses, orientations, resistivity ranges, surface finishes, and wafer grades can be customized according to customer requirements.

Product Overview

4H-N type silicon carbide wafer is a conductive SiC substrate based on the 4H crystal structure.

Compared with traditional silicon wafers, SiC wafers offer higher thermal conductivity, better power handling capability, higher temperature resistance, and improved efficiency in demanding power semiconductor applications.

These advantages make 4H-N SiC wafers an ideal substrate choice for SiC MOSFETs, Schottky barrier diodes, power modules, RF devices, sensors, and other next-generation semiconductor devices.

Available Wafer Sizes

We can supply 4H-N type SiC wafers in different diameters according to project requirements:

• 2-inch 4H-N SiC wafer
• 4-inch 4H-N SiC wafer
• 6-inch 4H-N SiC wafer
• 8-inch 4H-N SiC wafer
• 12-inch 4H-N SiC wafer

Whether you need small-size wafers for laboratory research and testing, or larger wafers for device development and production evaluation, we can provide suitable SiC substrate solutions.

Key Features

• 4H-N type silicon carbide substrate
• Available from 2 inch to 12 inch
• Excellent thermal conductivity
• Wide bandgap material for high-voltage applications
• High breakdown electric field
• Good mechanical strength and chemical stability
• Suitable for high-power and high-frequency devices
• Single-side polished, double-side polished, and epi-ready options available
• Dummy grade and prime grade available upon request
• Custom specifications available for research, testing, and production needs

Typical Applications

Our 4H-N type SiC wafers are suitable for a wide range of semiconductor and power electronic applications, including:

• SiC MOSFETs
• SiC Schottky barrier diodes
• Power semiconductor devices
• High-voltage power modules
• EV power systems
• Solar inverters
• Industrial power supplies
• RF and microwave devices
• High-temperature electronic devices
• Semiconductor research and development
• Epitaxial growth and device fabrication

Customizable Specifications

We can provide customized 4H-N type SiC wafers based on your application requirements. Common customizable parameters include:

• Diameter: 2 inch to 12 inch
• Polytype: 4H-SiC
• Conductivity type: N-type
• Orientation: on-axis or off-axis available upon request
• Thickness: customized
• Resistivity: customized according to application
• Surface finish: SSP, DSP, or epi-ready
• Grade: dummy grade, test grade, research grade, or prime grade
• TTV, bow, warp, micropipe density, surface roughness, and other parameters available upon request

If you have specific technical requirements, drawings, datasheets, or target applications, our team can help evaluate the most suitable SiC wafer solution for your project.

Why Choose Our 4H-N SiC Wafers?

We focus on providing reliable semiconductor substrate materials for global customers. Our 4H-N type silicon carbide wafers are carefully selected, processed, and inspected to support stable performance in research, development, and semiconductor production evaluation.

With flexible customization, responsive technical support, and experience in semiconductor and optical material supply, we can help customers find suitable SiC wafer solutions for different applications.

Request a Quotation

If you are looking for 2-inch to 12-inch 4H-N type silicon carbide wafers, please contact us with your required specifications, including wafer diameter, thickness, orientation, resistivity, surface finish, grade, and quantity.

Our team will review your requirements and provide a suitable quotation, lead time, and technical support for your project.