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SHANGHAI FAMOUS TRADE CO.,LTD

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  3. Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

  1. China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  2. China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  3. China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  4. China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
  5. China Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

  1. MOQ： 10pc
  2. Price： By case
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000pc/month
Delivery Time in 30days
Packaging Details customzied plastic box
Surface Hardness HV0.3>2500
Density 3.21 G/cm3
Thermal Expansion Coefficient 4.5 X 10-6/K
Dielectric Constant 9.7
Tensile Strength >400MPa
Material SiC Monocrystal
Size 10*10 mm
Breakdown Voltage 5.5 MV/cm
Brand Name ZMSH
Model Number 6H-P SiC
Certification rohs
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000pc/month
Delivery Time in 30days Packaging Details customzied plastic box
Surface Hardness HV0.3>2500 Density 3.21 G/cm3
Thermal Expansion Coefficient 4.5 X 10-6/K Dielectric Constant 9.7
Tensile Strength >400MPa Material SiC Monocrystal
Size 10*10 mm Breakdown Voltage 5.5 MV/cm
Brand Name ZMSH Model Number 6H-P SiC
Certification rohs Place of Origin CHINA
High Light High-power Devices SIC Wafer ，350μm SIC Wafer ，10*10 mm SIC Wafer

Product Description:

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
 
6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and high temperature resistance, which is widely used in high-power and high-frequency electronic devices. P-type doping is achieved by introducing elements such as aluminum (Al), which makes the material electropositive and suitable for specific electronic device designs. The bandgap is about 3.0 eV, which is suitable for operation in high-temperature and high-voltage environments. Thermal conductivity is superior to many traditional semiconductor materials and helps improve device efficiency. Mechanical Strength: Good mechanical strength, suitable for high power applications.
In the field of power electronics, it can be used to manufacture high-efficiency power devices, such as MOSFETs and IGBTs. In the field of radio frequency equipment, it has excellent performance in high-frequency applications and is widely used in communication equipment. In the field of LED technology, it can be used as a basic material for blue and ultraviolet LED devices.
 

Features:

· Wide band gap: The band gap is about 3.0 eV, making it suitable for high temperature, high voltage and high frequency applications.
· Excellent thermal conductivity: With good thermal conductivity, help heat dissipation, improve device performance and reliability.
· High strength and hardness: high mechanical strength, anti-fragmentation and anti-wear, suitable for use in harsh environments.
· Electron mobility: P-type doping still maintains relatively high carrier mobility, supporting efficient electronic devices.
· Optical properties: With unique optical properties, suitable for the field of optoelectronics, such as leds and lasers.
· Chemical stability: Good resistance to chemical corrosion, suitable for harsh working environments.
· Strong adaptability: can be combined with a variety of substrate materials, suitable for a variety of application scenarios.
 

Technical Parameters:

Applications:

· Power electronics: Used to manufacture high-efficiency power devices, such as MOSFETs and IGBTs, which are widely used in frequency converters, power management, and electric vehicles.
· RF & Microwave Equipment: Used in high-frequency amplifiers, RF power amplifiers, suitable for communication and radar systems.
· Optoelectronics: Used as a substrate in LEDs and lasers, especially in blue and ultraviolet applications.
· High Temperature Sensors: Due to their good thermal stability, they are suitable for high temperature sensors and monitoring equipment.
· Solar energy and energy systems: used in solar inverters and other renewable energy applications to improve energy conversion efficiency.
· Automotive Electronics: Performance optimization and energy saving in the power system of electric and hybrid vehicles.
· Industrial electrical equipment: Power modules for a wide range of industrial automation equipment and machines to improve energy efficiency and reliability.
 

Customization:

Our SiC substrate is available in the 6H-P type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 10*10 mm. Place of origin is China.
 

Our services:

1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.

FAQ

 

1. Q: Compared with N-Type, how about the P-Type?
A: P-Type 4H-SiC substrates, doped with trivalent elements like aluminum, have holes as the majority carriers, providing good conductivity and stability at high temperatures. In contrast, N-Type substrates, doped with pentavalent elements like phosphorus, have electrons as the majority carriers, which typically results in higher electron mobility and lower resistivity.
 
2. Q: What is the market outlook for P-Type SiC?
A: The market outlook for P-Type SiC is highly positive, driven by increasing demand for high-performance power electronics in electric vehicles, renewable energy systems, and advanced industrial applications.
 
 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification：

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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