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SHANGHAI FAMOUS TRADE CO.,LTD

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China SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot
China SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot

  1. China SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot
  2. China SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot
  3. China SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot
  4. China SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot

SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot

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Payment Terms T/T
Delivery Time 2-4 weeks
Material SiC Single Crystal
Type 4H-N
Grade Prime/ Dummy
Dia 150mm
Thickness 17mm
Customized Supported
Brand Name ZMSH
Model Number SiC Ingot
Place of Origin China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Delivery Time 2-4 weeks
Material SiC Single Crystal Type 4H-N
Grade Prime/ Dummy Dia 150mm
Thickness 17mm Customized Supported
Brand Name ZMSH Model Number SiC Ingot
Place of Origin China
High Light 4H-N SiC IngotHigh Hardness SiC IngotPrime Grade SiC Ingot

SiC Ingot, Silicon Carbide Ingot, SiC raw Ingot, Silicon Carbide raw Ingot, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type

 


About 4H-N SiC Ingot

 

- support customized ones with design artwork

 

- a hexagonal crystal (4H SiC), made by SiC monocrystal

 

- High hardness, Mohs hardness reaches 9.2, second only to diamond.

 

- excellent thermal conductivity, suitable for high-temperature environments.

 

- wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.

 


 

Description of SiC Ingot

 

SiC ingot (Silicon Carbide Ingot) is a high-purity crystal made of silicon carbide material, which is widely used in high-power electronic devices and semiconductor industry.

SiC ingots are usually grown by methods such as physical vapor transport (PVT) or chemical vapor deposition (CVD), and have extremely high thermal conductivity, wide bandgap and excellent chemical stability.

These characteristics make SiC ingots particularly suitable for the manufacture of electronic devices that require high-speed switching, high temperature and high voltage operation.

 

The growth process of SiC ingots is complex and strictly controlled to ensure the high quality and low defect rate of the crystal.

Due to its excellent thermal and electrical properties, SiC ingots have wide application potential in energy conservation, electric vehicles, renewable energy and aerospace.

In addition, the hardness of SiC ingots is extremely high, close to that of diamonds, which requires specialized equipment and technology during cutting and processing.

Overall, SiC ingots represent an important direction for the development of high-performance electronic device materials in the future.

 

SiC Ingot to SiC Substrate

The ingot is first grown through a high-temperature melting and cooling process and then processed into a substrate through processes such as cutting and polishing.

Substrates are the basic materials in the manufacture of semiconductor devices and are used to make various electronic components.

Therefore, silicon carbide ingots are the key raw materials for producing silicon carbide substrate.

 


 

Details of SiC Ingot

 

 
Item Specification
Diameter 150 mm
SiC Polytype 4H-N
SiC Resistivity ≥1E8 Ω·cm
Transfer SiC layer Thickness ≥0.1 μm
Void ≤5 ea/wafer (2 mm > D > 0.5 mm)
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm)
Orientation <111>/<100>/<110>
Type P/N
Flat/Notch Flat/Notch
Edge Chip, Scratch, Crack (visual inspection) None
TTV ≤5 μm
Thickness 15mm

 


 

Other pictures of SiC Ingot

*Please feel free to reach out to us if you have customized demands.

 

 

About us 
Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.

 

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2. 2" 3" FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation Layer 100nm 300nm


 

FAQ

1. Q: Compared with substrate, what about the application of ingot?

A: Compared with substrate, silicon carbide ingots have higher purity and mechanical strength and are suitable for use in extreme environments.

Ingots offer superior mechanical strength and purity, making them ideal for applications in high-power and high-frequency devices

 

2. Q: What is the market outlook for silicon carbide ingots?
A: As the electric vehicle and renewable energy markets grow, the demand for silicon carbide ingots continues to rise.

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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