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SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
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China 4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness
China 4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness

  1. China 4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness
  2. China 4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness
  3. China 4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness
  4. China 4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness

4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness

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Payment Terms T/T
Delivery Time 2-4 weeks
Material SiC Single Crystal
Type N type
Grade Prime / Dummy Grade
Density 3.2 G/cm3
Size 5mm*5mm
Orientation <1120>
Brand Name ZMSH
Model Number SiC Substrate
Place of Origin China

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  1. Product Details
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Product Specification

Payment Terms T/T Delivery Time 2-4 weeks
Material SiC Single Crystal Type N type
Grade Prime / Dummy Grade Density 3.2 G/cm3
Size 5mm*5mm Orientation <1120>
Brand Name ZMSH Model Number SiC Substrate
Place of Origin China
High Light Prime Grade SiC substrateCustomized Thickness SiC substrate5mm*5mm SiC substrate

Semi-insulating SiC on Si Compound Wafer, SiC wafer, Silicon Carbide Wafer, Compound Wafer, SiC on Si Compound Substrate, Silicon Carbide Substrate, Prime Grade, Dummy Grade, Square SiC, 2inch, 4inch, 6inch, 8inch, 12inch 4H-N, 6H-N, 4H-SEMI


The Character of 4H-N SiC

 

- support customized ones with design artwork

 

- use SiC Monocrystal to make (Silicon Carbide Single Crystal)

 

- high performance, high hardness 9.2, wear-resistant

 

- wide bandgap and high electron mobility

 

-Widely used in technology sectors such as power electronics, LEDs, sensors, etc.

 


 

The Description of 4H-N SiC

SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has excellent electrical and thermal properties.

 

4H-N SiC is a silicon carbide material that belongs to the 4H crystal structure in the silicon carbide polytype.

Its "N" represents that it is an N-type semiconductor material with electronic conductivity.

The 4H structure is a four-layer stacked hexagonal crystal arrangement.

With this unique crystal structure, its application in high-power and high-frequency electronic devices is very prominent.


4H-N SiC has a wide bandgap (about 3.26 eV) and can still operate stably at high temperatures, making it suitable for electronic devices in extreme environments.

Its wide bandgap brings good thermal stability and excellent radiation resistance, especially suitable for occasions such as aerospace and nuclear energy that require extremely high material stability.


In addition, 4H-N SiC has higher electron mobility and higher breakdown electric field strength, so it is widely used in power semiconductors, radio frequency devices, and high-efficiency energy and electronic devices such as electric vehicles.

Its excellent physical properties make it a key material for future high-efficiency electronic systems, which can significantly improve efficiency and performance.

 

 


 

The Details of 4H-N SiC

 

 

Grade Production Grade Dummy Grade
Diameter 150.0 mm +/- 0.2 mm
Thickness 500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N
Wafer Orientation On axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N
Micropipe Density (MPD) 5 cm-2 30 cm-2
Doping Concentration N-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3
Primary Flat (N-type) {10-10} +/- 5.0 deg
Primary Flat Length (N-type) 47.5 mm +/- 2.0 mm
Notch (Semi-Insulating type) Notch
Edge exclusion 3 mm
TTV /Bow /Warp 15um /40um /60um
Surface Roughness Polish Ra 1 nm
CMP Ra 0.5 nm on the Si face

 


 

More samples of 4H-N SiC

*This is the 2inch one.

 


 

About us 

Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
 

 

Products Recommend

1.4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime grade Dummy grade

 

2.4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

 


 

FAQ

1.Q: Can I use 4H-N SiC personally?

A: Yes, you can use 4H-N SiC personally, but ensure you have the necessary knowledge, equipment, and budget to handle and apply it safely.

 

2.Q: What is the future prospect of 4H-N SiC

A: The future prospect of 4H-N SiC is promising, with increasing demand in high-power electronics, electric vehicles, and next-generation semiconductor technologies due to its superior electrical and thermal properties.

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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