SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4 weeks |
| Material | SiC Single Crystal |
| Type | 4H-N Type |
| Dia | 100mm |
| Thickness | 350 um |
| Orientation | Off axis: 4° toward <1120> |
| Grade | P grade or D grade |
| Brand Name | ZMSH |
| Model Number | SiC Substrate |
| Place of Origin | China |
View Detail Information
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4 weeks |
| Material | SiC Single Crystal | Type | 4H-N Type |
| Dia | 100mm | Thickness | 350 um |
| Orientation | Off axis: 4° toward <1120> | Grade | P grade or D grade |
| Brand Name | ZMSH | Model Number | SiC Substrate |
| Place of Origin | China | ||
| High Light | 4H-N SiC Substrate ，Customized SiC Substrate ，100mm SiC Substrate | ||
- Use SiC Monocrystal to manufacture
- Support customized ones with design artwork
- Exceptional performance, wide bandgap and high electron mobility
- Superior Hardness, 9.2 Mohs scale for scratch resistance
- Widely used in technology sectors such as power electronics, LEDs, and sensors.
About 4H-N SiC
SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has excellent electrical and thermal properties.
SiC substrates are commonly used as a platform for the growth of epitaxial layers of SiC or other materials, which can be used to fabricate various electronic and optoelectronic devices, such as high-power transistors, Schottky diodes, UV photodetectors, and LEDs.
SiC substrates are preferred over other semiconductor materials, such as silicon, for high-power and high-temperature electronics applications due to their superior properties, including higher breakdown voltage, higher thermal conductivity, and higher maximum operating temperature.
SiC devices can operate at much higher temperatures than silicon-based devices, making them suitable for use in extreme environments, such as in automotive, aerospace, and energy applications.
*Further details are following:
| Grade | Production Grade | Dummy Grade | |
| Diameter | 150.0 mm +/- 0.2 mm | ||
| Thickness | 500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N | ||
| Wafer Orientation | On axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N | ||
| Micropipe Density (MPD) | 5 cm-2 | 30 cm-2 | |
| Doping Concentration | N-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3 | ||
| Primary Flat (N-type) | {10-10} +/- 5.0 deg | ||
| Primary Flat Length (N-type) | 47.5 mm +/- 2.0 mm | ||
| Notch (Semi-Insulating type) | Notch | ||
| Edge exclusion | 3 mm | ||
| TTV /Bow /Warp | 15um /40um /60um | ||
| Surface Roughness | Polish Ra 1 nm | ||
| CMP Ra 0.5 nm on the Si face | |||
More samples
Other SiC products recommend
1. Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm
2. 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 10 X 10 X 0.5mm
FAQ about 4H-N SiC
1. Q: What is the difference between 4H-N SiC and 4H-Semi SiC
A: 4H-N SiC is a high-purity, undoped silicon carbide with superior electrical performance suited for high-power and high-frequency applications,
while 4H-Semi SiC is semi-insulating with varying doping levels, designed for applications needing electrical insulation.
2. Q: How does the thermal conductivity of 4H-N SiC compare to other semiconductors?
A: 4H-N SiC has higher thermal conductivity than many other semiconductors, which helps in better heat dissipation and thermal management.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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