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SHANGHAI FAMOUS TRADE CO.,LTD

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China 12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade
China 12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade

  1. China 12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade
  2. China 12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade
  3. China 12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade
  4. China 12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade

12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade

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Payment Terms T/T
Delivery Time 4-6weeks
Material SiC Single Crystal 4h-N
Grade P/D/R Grade
Color Green
Diameter 12 inch
Brand Name ZMSH
Model Number Silicon Carbide Wafer
Certification ROHS
Place of Origin Shanghai China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Delivery Time 4-6weeks
Material SiC Single Crystal 4h-N Grade P/D/R Grade
Color Green Diameter 12 inch
Brand Name ZMSH Model Number Silicon Carbide Wafer
Certification ROHS Place of Origin Shanghai China
High Light Multiple Applications SiC Silicon Carbide Wafer12inch SiC Silicon Carbide WaferMultiple Applications SiC Silicon Carbide Wafer

12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications


 

Product introduction

 

SiC, commonly referred to as silicon carbide, is a compound formed by combining silicon and carbon. Silicon carbide seed crystal is an important form, which is widely used in semiconductor materials, ceramics, abrasives and other fields. Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool. 4H-SiC, has a hexagonal crystal structure with four layers of repeating sequences. Compared with other polycrystalline SiC such as 6H-SiC, 4H-SiC has higher thermal conductivity, larger band gap and higher electron mobility. Because of these properties, 4H-SiC is more suitable for high-power and high-frequency electronic devices.

 

 


Growth Techniques

 

At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals.

 


Product Parameters

 

Diameter 300.0 mm+0mm/-0.5mm
Surface Orientation 4°toward<11-20>±0.5°
Primary Flat Length Notch
Secondary Flat Length None
Notch Orientation <1-100>±1°
Notch Angle 90°+5/-1°
Notch Depth 1mm+0.25mm/-0mm
Orthogonal Misorientation ±5.0°
Surface Finish C-Face:Optical Polish,Si-Face:CMP
Wafer Edge Beveling
Surface Roughness
(10μm×10μm)
Si-Face:Ra≤0.2 nm C-Face:Ra≤0.5 nm
Thickness 500.0μm±25.0μm
LTV(10mmx10mm) ≤3μm
TTV ≤10μm
BOW ≤25μm
Warp ≤40μm
Surface Parameters
Chips/Indents None permitted≥0.5mm Width and Depth
Scratches²

(Si face CS8520)
≤5 and Cumulative Length≤1 Wafer Diameter
TUA²(2mm*2mm) ≥95%
Cracks None Permitted
Stain None Permitted
Edge Exclusion 3mm

 


Product key features

 

-High electrical conductivity: Nitrogen doping improves the electrical conductivity of the material and is suitable for high performance power converters.

 

-Excellent thermal performance: Good thermal conductivity enables the equipment to maintain stable performance in high temperature environments.

 

-High breakdown voltage: able to withstand higher voltages, suitable for high voltage applications.

-Environmental adaptability: Performs well in harsh environments for aerospace and military applications.

 

 


Product Applications

 

1. Power electronics

-High voltage inverters: for renewable energy systems, such as solar and wind power generation.

-Rectifier: Used in power conversion and power management.

 

2. Radio frequency device

-Wireless communication: Radio frequency amplifier for base stations and mobile devices.

-Radar systems: Used for high-frequency signal processing in aviation and military applications.

 

3. Automotive electronics

-Electric vehicles: used in electric drive systems and charging equipment to improve energy efficiency and performance.

-Smart cars: Applications in autonomous driving and connected vehicle technologies.

 

4.Photoelectric device

-LED: Used for high-brightness light-emitting diodes to improve light efficiency and durability.

-Lasers: Used in laser lighting and industrial processing.

 

The superior performance of 4H-N SiC wafer makes it have a wide range of application potential in the above fields, and promotes the development of high-efficiency and high-reliability devices.

 


Other Products We Can Provide

 

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

 

3inch HPSI Silicon Carbide SiC Substrate Thickness 500um Prime Grade Dummy Grade Research Grade

 

4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade

 


About us

 
Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, and management expertise in processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in optoelectronic materials.
 

FAQ

 

1. Q: What's the difference between 4H-SiC and 6H-SiC?

A: 4H-SiC is widely used in the field of microelectronics, especially in high frequency, high temperature, high power devices. 6H-SiC is more suitable for optoelectronics. The choice of the two polymorphs depends on the specific requirements and intended application of the semiconductor device.

 

2. Q: What are the properties of 4H SiC?

A: High electrical conductivity, excellent thermal performance, high breakdown voltage.

 

 

 

Tags: #12 inch SIC wafer, #Diameter 300mm, #SiC Silicon Carbide substrate, #4H-N Type, #Dummy/Prime/Research Grade, #Multiple Applications

 

 

 

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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