SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pc/month |
| Polytype | 6H-P |
| Mohs Hardness | ≈9.2 |
| Density | 3.0 g/cm3 |
| Resistivity | ≤0.1 Ω.cm |
| Surface Orientation | on axis 0° |
| Roughness | Polish Ra≤1 nm |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
| Application | Microwave amplifier, antenna |
| Brand Name | ZMSH |
| Model Number | SiC 6H-P |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pc/month |
| Polytype | 6H-P | Mohs Hardness | ≈9.2 |
| Density | 3.0 g/cm3 | Resistivity | ≤0.1 Ω.cm |
| Surface Orientation | on axis 0° | Roughness | Polish Ra≤1 nm |
| Packaging | Multi-wafer Cassette or Single Wafer Container | Application | Microwave amplifier, antenna |
| Brand Name | ZMSH | Model Number | SiC 6H-P |
| Certification | rohs | Place of Origin | CHINA |
| High Light | 6H-P Sic Silicon carbide substrate ，Sic Silicon carbide substrate ，Laser Device Sic Silicon carbide substrate | ||
6H-P type silicon carbide substrate is a semiconductor material grown by a special process. Its crystal structure is 6H type, indicating that its cells have hexagonal symmetry, and each cell contains a stacking sequence of six silicon atoms and six carbon atoms. P-type indicates that the substrate has been doped so that its conductivity is dominated by holes. An axis of 0° refers to the fact that the crystal orientation of the substrate is 0° in a specific direction (such as the C-axis of the crystal), which is usually related to the growth and processing of the crystal.
4 inch diameter Silicon Carbide (SiC) Substrate Specification
| 等级Grade | 精选级(Z 级) Zero MPD Production Grade (Z Grade) | 工业级(P 级) Standard Production Grade (P Grade) | 测试级(D 级) Dummy Grade (D Grade) | ||
| 直径 Diameter | 99.5 mm~100.0 mm | ||||
| 厚度 Thickness | 350 μm ± 25 μm | ||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H- | ||||
| 微管密度 ※ Micropipe Density | 0 cm-2 | ||||
| 电 阻 率 ※ Resistivity | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| 主定位边长度 Primary Flat Length | 32.5 mm ± 2.0 mm | ||||
| 次定位边长度 Secondary Flat Length | 18.0 mm ± 2.0 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 6 mm | |||
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| 表面粗糙度 ※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm | |||
| 六方空洞(强光灯测) ※ Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| 目测包裹物(日光灯观测) Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | |||
| 硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| 崩边(强光灯观测) Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
1. Q: Compared with type 4H, what are the differences in performance between type 6H-P SIC substrate axis 0°?
A: 6H type silicon carbide compared to 4H type, the crystal structure is different, which may lead to differences in electrical properties, thermal properties and mechanical strength. The 6H-P type axis of 0° generally has more stable electrical properties and higher thermal conductivity, suitable for specific high-temperature, high-frequency applications.
2. Q: What is the difference between 4H and 6H SiC?
A: The main difference between 4H and 6H silicon carbide is their crystal structure, 4H is a tetragonal hexagonal mixed crystal, and 6H is a pure hexagonal crystal.
Tag: #Sic wafer, #silicon carbide substrate, #Sic 6H-P type, #on axis 0°, #Mohs Hardness 9.2
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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