SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pc/month |
| Polytype | 6H-P |
| Density | 3.0 g/cm3 |
| Resistivity | ≤0.1 Ω.cm |
| Surface Orientation | Off axis: 2.0° toward [110] ± 0.5° |
| Roughness | Polish Ra≤1 nm |
| Edge Exclusion | 3 mm |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
| Application | Microwave amplifier, antenna |
| Brand Name | ZMSH |
| Model Number | SiC 6H-P |
| Certification | rohs |
| Place of Origin | CHINA |
View Detail Information
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pc/month |
| Polytype | 6H-P | Density | 3.0 g/cm3 |
| Resistivity | ≤0.1 Ω.cm | Surface Orientation | Off axis: 2.0° toward [110] ± 0.5° |
| Roughness | Polish Ra≤1 nm | Edge Exclusion | 3 mm |
| Packaging | Multi-wafer Cassette or Single Wafer Container | Application | Microwave amplifier, antenna |
| Brand Name | ZMSH | Model Number | SiC 6H-P |
| Certification | rohs | Place of Origin | CHINA |
| High Light | Off axis Silicon carbide wafer ，Research Grade Silicon carbide wafer ，Production Grade Silicon carbide wafer | ||
Type 6H-P Sic is made of advanced semiconductor material preparation process with specific crystal structure and doping type. Among them, "6H" represents the crystal structure type of silicon carbide, which belongs to a hexagonal crystal system; "P-type" indicates that the substrate is doped so that the holes become the main carrier type. The design with an off-axis Angle of 2.0° helps to optimize the performance of the crystal in a specific direction to meet the needs of specific application scenarios.
1. High doping concentration: 6H-P type Sic achieves a high concentration of hole carrier distribution through a specific doping process, which helps to improve the electrical conductivity and switching speed of the device.
2. Low resistivity: Due to the high doping concentration, the substrate exhibits low resistivity, which helps to reduce the energy loss of the device during operation.
3. Good thermal stability: Sic material itself has a very high melting point, making 6H-P substrate can maintain stable performance in high temperature environment.
4. Excellent mechanical properties: Sic material has high hardness, wear resistance and other characteristics, making 6H-P substrate can withstand greater mechanical stress in the manufacturing process.
5. Off-axis Angle optimization: The design of the off-axis Angle is 2.0°, so that the performance of the substrate is optimized in a specific direction, which helps to improve the overall performance of the device.
2 inch diameter Silicon Carbide (SiC) Substrate Specification
| 等级 Grade | 工业级 Production Grade (P Grade) | 研究级 Research Grade (R Grade) | 试片级 Dummy Grade (D Grade) | ||
| 直径 Diameter | 50.8mm±0.38mm | ||||
| 厚度 Thickness | 350 μm±25 μm | ||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | ||||
| 微管密度 Micropipe Density | 0 cm-2 | ||||
| 电阻率 ※Resistivity | 4H/6H-P | ≤0.1 Ω.cm | |||
| 3C-N | ≤0.8 mΩ•cm | ||||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | {10-10} ±5.0° | |||
| 3C-N | {1-10} ±5.0° | ||||
| 主定位边长度 Primary Flat Length | 15.9 mm ±1.7 mm | ||||
| 次定位边长度 Secondary Flat Length | 8.0 mm ±1.7 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 3 mm | |||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ||||
| 表面粗糙度※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | |||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | 1 allowed, ≤1 mm | |||
| 六方空洞(强光灯观测) ※ Hex Plates By High Intensity Light | Cumulative area≤1 % | Cumulative area≤3 % | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤2 % | Cumulative area≤5% | ||
| Si 面划痕(强光灯观测)# Silicon Surface Scratches By High Intensity Light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 8 scratches to 1×wafer diameter cumulative length | ||
| 崩边(强光灯观测) Edge Chips High By Intensity Light light | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
1. Q: What is Sic 6H-P off-axis to 2.0°?
A: Sic 6H-P off-axis to 2.0° refers to a P-type silicon carbide material with a 6H crystal structure, and its cutting direction deviates from the crystal spindle by 2.0°. This design is designed to optimize specific properties of silicon carbide materials, such as increasing carrier mobility and reducing defect density, to meet the manufacturing needs of high-performance semiconductor devices.
2. Q: What is the difference between P-type and N-type silicon wafers?
A: The main difference between P-type silicon wafers and N-type silicon wafers is that the doping elements are different, P-type boron and N-type phosphorus, resulting in their electrical conductivity and physical properties are different.
Tag: #Sic wafer, #silicon carbide substrate, #Sic 6H-P type, #Off axis: 2.0° toward, #Mohs Hardness 9.2
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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