SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pcs per month |
| Delivery Time | 5-8weeks |
| Packaging Details | Package in 100-grade cleaning room |
| Crystal Structure | 4H-SiC single crystal |
| Size | 4inch |
| Diameter | 100 mm (±0.1 mm) |
| Doping Type | N-type/P-type |
| Thickness | 350μm |
| Edge Exclusion | 3 mm |
| Brand Name | ZMSH |
| Model Number | 4inch SiC Epitaxial Wafer |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pcs per month |
| Delivery Time | 5-8weeks | Packaging Details | Package in 100-grade cleaning room |
| Crystal Structure | 4H-SiC single crystal | Size | 4inch |
| Diameter | 100 mm (±0.1 mm) | Doping Type | N-type/P-type |
| Thickness | 350μm | Edge Exclusion | 3 mm |
| Brand Name | ZMSH | Model Number | 4inch SiC Epitaxial Wafer |
| Certification | rohs | Place of Origin | CHINA |
| High Light | 100mm SiC Epitaxial Wafer ，Prime Grade SiC Epitaxial Wafer | ||
4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade
As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on a 4H-N-type SiC wafer, grown using chemical vapor deposition (CVD) to produce a high-uniformity, low-defect-density single-crystal thin film. Its technical advantages include:
· Crystal Structure: (0001) silicon-face orientation with a 4° offcut to optimize lattice matching and reduce micropipe/stacking fault defects.
· Electrical Performance: N-type doping concentration precisely controlled between 2×10¹⁴–2×10¹⁹ cm⁻³ (±14% tolerance), achieving resistivity adjustable from 0.015–0.15 Ω·cm via in-situ doping technology.
· Defect Control: Surface defect density <25 cm⁻² (TSD/TED), triangular defect density <0.5 cm⁻², ensured by magnetic-field-assisted growth and real-time monitoring.
Leveraging domestically developed CVD equipment clusters, ZMSH achieves full-process control from wafer processing to epitaxial growth, supporting rapid small-batch trials (minimum 50 wafers) and customized solutions for applications in new energy vehicles, photovoltaic inverters, and 5G base stations.
| Parameter | Specification |
| Diameter | 100 mm (±0.1 mm) |
| Thickness | 10–35 μm (low voltage) / 50–100 μm (HV) |
| Doping Concentration (N) | 2×10¹⁴–2×10¹⁹ cm⁻³ |
| Surface Defect Density | <25 cm⁻² (TSD/TED) |
| Resistivity | 0.015–0.15 Ω·cm (adjustable) |
| Edge Exclusion | 3 mm |
1. Material Performance
- Thermal Conductivity: >350 W/m·K, ensuring stable operation at >200°C, 3× higher than silicon.
- Breakdown Field Strength: >3 MV/cm, enabling 10kV+ high-voltage devices with optimized thickness (10–100 μm).
- Carrier Mobility: Electron mobility >900 cm²/(V·s), enhanced by gradient doping for faster switching.
2. Process Advantages
- Thickness Uniformity: <3% (9-point test) via dual-temperature zone reactors, supporting 5–100 μm thickness control.
- Surface Quality: Ra <0.5 nm (AFM), optimized by hydrogen etching and chemical mechanical polishing (CMP).
- Defect Density: Micropipe density <1 cm⁻², minimized through reverse-bias annealing.
3. Customization Capabilities
- Crystal Orientation: Supports (0001) silicon-face, (11-20) carbon-face, and quasi-homoepitaxial growth for trench MOSFETs and JBS diodes.
- Packaging Compatibility: Offers double-sided polishing (Ra <0.5 nm) and wafer-level packaging (WLP) for TO-247/DFN.
1. New Energy Vehicles
- Main Drive Inverters: 1200V epitaxial wafers for SiC MOSFET modules, improving system efficiency to 98% and reducing EV range loss by 10–15%.
- Fast Charging: 600V wafers enabling 800V platforms for 30-minute 80% charging (e.g., Tesla, NIO).
2. Industrial & Energy
- Solar Inverters: 1700V wafers for DC-AC conversion, boosting efficiency to 99% and lowering LCOE by 5–8%.
- Smart Grids: 10kV wafers for solid-state transformers (SST), reducing transmission losses to <0.5%.
3. Optoelectronics & Sensing
- UV Detectors: Utilizing 3.2 eV bandgap for 200–280 nm detection in flame monitoring and biochemical threat detection.
- GaN-on-SiC RF Devices: HEMTs on 4-inch wafers for 5G base stations, achieving 70% PA efficiency.
4. Railway & Aerospace
- Traction Inverters: High-temperature wafers (-55°C–200°C) for IGBT modules in bullet trains (AEC-Q101 certified).
- Satellite Power: Radiation-hardened wafers (>100 krad(Si)) for deep-space DC-DC converters.
1. Core Competencies
· Full-Size Coverage: 2–12-inch SiC substrates/epitaxial wafers, including 4H/6H-N, HPSI, SEMI, and 3C-N polytypes.
· Custom Fabrication: Custom cutting (through-holes, sectors), double-side polishing, and WLP.
· End-to-End Solutions: CVD epitaxy, ion implantation, annealing, and device validation.
2. Production Capacity
· 6-inch Wafers: 360,000 annual capacity; 8-inch R&D line operational.
· Certifications: IATF 16949-certified, >95% yield for automotive-grade products.
· Cost Leadership: 75% domestic CVD equipment, 25% lower costs vs. international competitors.
The following is the recommended 3C-N type for SiC substrates:
1. Q: What are the key advantages of 4-inch SiC epitaxial wafers?
A: High uniformity (<3% thickness variation) and ultra-low defect density (<0.5 cm⁻² triangles) enable reliable performance in high-voltage (10kV+) and high-temperature (>200°C) power devices.
2. Q: Which industries use 4-inch SiC epitaxial wafers?
A: Primarily automotive (EV inverters, fast charging), renewable energy (solar inverters), and 5G communications (GaN-on-SiC RF devices).
Tags: #4inch, #Customized, #Diameter 100mm, #4H-N Type, # SiC Epitaxial Wafer, #High-Temperature Sensors, #Silicon carbide, #Thickness 350μm, #Prime Grade
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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