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SHANGHAI FAMOUS TRADE CO.,LTD

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China SiC Crystal Seed Wafers Dia 205 203 208 Production Grade PVT/HTCVD Growth
China SiC Crystal Seed Wafers Dia 205 203 208 Production Grade PVT/HTCVD Growth

  1. China SiC Crystal Seed Wafers Dia 205 203 208 Production Grade PVT/HTCVD Growth
  2. China SiC Crystal Seed Wafers Dia 205 203 208 Production Grade PVT/HTCVD Growth
  3. China SiC Crystal Seed Wafers Dia 205 203 208 Production Grade PVT/HTCVD Growth

SiC Crystal Seed Wafers Dia 205 203 208 Production Grade PVT/HTCVD Growth

  1. MOQ: 25
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T
Delivery Time 2-4weeks
Polytype 4H
Diameter 205, 203, 208
Size 2inch-12inch, Customized
Resistivity 0.01~0.04Ω·cm
Surface Orientation Error 4°toward<11-20>±0.5º
Application MOSFETs, Radio frequency device
Brand Name ZMSH
Model Number SiC seed wafer
Certification rohs
Place of Origin CHINA

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  1. Product Details
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Product Specification

Payment Terms T/T Delivery Time 2-4weeks
Polytype 4H Diameter 205, 203, 208
Size 2inch-12inch, Customized Resistivity 0.01~0.04Ω·cm
Surface Orientation Error 4°toward<11-20>±0.5º Application MOSFETs, Radio frequency device
Brand Name ZMSH Model Number SiC seed wafer
Certification rohs Place of Origin CHINA
High Light HTCVD SiC crystal seed wafersDia 205 SiC crystal seed wafersPVT SiC crystal seed wafers

 

Abstract of SiC seed wafer

 

SiC crystal seed wafers Dia 205 203 208 Production Grade PVT/HTCVD growth

 

 

​​Silicon Carbide (SiC) Seed Crystal Wafers​​ are the foundational materials for SiC single-crystal growth and device fabrication, produced through cutting, grinding, and polishing of high-purity SiC crystals. These wafers exhibit ​​ultra-high thermal conductivity (4.9 W/cm·K)​​, ​​exceptional breakdown field strength (2–4 MV/cm)​​, ​​wide bandgap (3.2 eV)​​, and ​​chemical inertness​​, making them critical for applications in extreme environments such as aerospace, nuclear energy, and high-power electronics. Serving as the "seed" for crystal growth, their crystallographic orientation (e.g., 4H-SiC polytype), surface flatness, and micropipe density directly influence the quality of downstream ingots and device performance. ZMSH provides ​​2–12-inch SiC seed crystal wafers​​ with diameters of 153mm, 155mm, 203mm, 205mm, and 208mm, catering to semiconductor, renewable energy, and industrial sectors.

 

 


 

Key Features of SiC seed​ wafer

 

 

1. Physical and Chemical Superiority​​
​​- Extreme Durability​​: SiC Seed Crystal Wafers withstand temperatures exceeding 1700°C and radiation exposure, ideal for aerospace and nuclear applications.
- ​​Electrical Performance​​: High electron saturation velocity (2.7×10⁷ cm/s) enables high-frequency devices (e.g., 5G RF amplifiers).
- ​​Defect Control​​: Micropipe density <1 cm⁻² and minimal polytype defects ensure uniform ingot growth.

 


​​2. Advanced Fabrication Processes​​
​​- Crystal Growth​​: SiC Seed Crystal Wafers utilizes ​​Physical Vapor Transport (PVT)​​ or ​​High-Temperature Chemical Vapor Deposition (HTCVD)​​ to precisely control temperature gradients and precursor transport.
- ​​Processing Techniques​​: SiC Seed Crystal Wafers employs multi-wire sawing, diamond grinding, and laser stealth dicing to achieve surface roughness ≤Rz0.1μm and ±0.1mm dimensional accuracy.

 


​​3. Flexible Specifications​​
​​- Size Diversity​​: SiC Seed Crystal Wafers support 2–12-inch wafers (153–208mm diameter), adaptable to power devices, RF modules, and sensor applications.

 

 


 

Technical specifications of SiC seed wafers

 

 

Silicon carbide seed wafer

Polytype

4H

Surface orientation error

4°toward<11-20>±0.5º

Resistivity

customization

Diameter

205±0.5mm

Thickness

600±50μm

Roughness

CMP,Ra≤0.2nm

Micropipe Density

≤1 ea/cm2

Scratches

≤5,Total Length≤2*Diameter

Edge chips/indents

None

Front laser marking

None

Scratches

≤2,Total Length≤Diameter

Edge chips/indents

None

Polytype areas

None

Back laser marking

1mm (from top edge)

Edge

Chamfer

Packaging

Multi-wafer cassette

 

 


 

Primary applications of SiC seed​ wafer

 

1,Semiconductor Industry​​


· ​​Power Devices​​: Enable SiC MOSFETs and diodes for EV inverters, improving efficiency by 10–15% and reducing volume by 50%.
​​· RF Devices​​: SiC Seed Crystal Wafers​​ underpin 5G base station PAs and LNAs for millimeter-wave communication.

 


​​2,Renewables and Industry​​


​​· Solar/Storage​​: Critical for high-efficiency PV inverters, minimizing energy conversion losses.
· ​​Industrial Motors​​: High-temperature tolerance reduces cooling requirements in high-power drives.

 


3,​​Emerging Technologies​​


​​· Aerospace​​: Radiation resistance ensures reliability in space-grade electronics.
​​· Quantum Computing​​: High-purity wafers support low-temperature semiconductor quantum bits.

 

 


 

Related products

 

 

ZMSH's Competitive Edge in SiC Seed Crystal Wafers


1. ​​Integrated Technical Capabilities​​
​​Growth Mastery​​: Dominates PVT and HTCVD processes, achieving 8-inch wafer small-batch production with industry-leading yield.
​​Customization​​: Offers diameter flexibility (153–208mm) and specialized processing (e.g., trenching, coating).


2. ​​​​Strategic Roadmap​​
​​Technology Innovation​​: Developing ​​liquid-phase epitaxy (LPE)​​ to reduce defects and advancing 12-inch wafer mass production (30% cost reduction by 2025).
​​Market Expansion​​: Collaborating with EV and renewable energy sectors, integrating GaN-on-SiC heterostructures for next-gen systems.

 

 

 

SiC crystal growth furnace PVT/HTCVD method:

 

 

        

 

 

 

ZMSH's SiC crystal growth furnace PVT/HTCVD:
 

 

 

 

 


 

Q&A​

 

1. Q: What are the key advantages of silicon carbide (SiC) seed crystal wafers?​​
     A: Silicon carbide seed crystal wafers offer ​​extremely high thermal conductivity (4.9 W/cm·K)​​, ​​exceptional breakdown field strength (2–4 MV/cm)​​, and a ​​wide bandgap (3.2 eV)​​, enabling stable performance in high-temperature, high-voltage, and high-frequency applications like power electronics and RF devices .

 

 

​​2.Q: What industries use SiC seed crystal wafers?​​
    A: They are critical for ​​semiconductors​​ (MOSFETs, diodes), ​​renewables​​ (solar inverters), ​​automotive​​ (EV inverters), and ​​aerospace​​ (radiation-resistant electronics), enhancing efficiency and reliability in extreme conditions.

 

 


Tag: #SiC crystal seed wafers, #Shape and size customized, #4H-N type, #Dia 153,155, 205, 203, 208, # 2inch-12inch, #manufacturing MOSFETs, #Production Grade, #PVT/HTCVD growth

 

 

 

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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