SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4 weeks |
| Material | 99.999％ Al2O3 |
| Size | Customized |
| Vision Light Transmissivity | 90％ |
| Suraface | DSP |
| TTV | ≤ 10um |
| Industry | LED chip manufacturing, Optical Windows and sensors |
| Brand Name | ZMSH |
| Model Number | 6inch Sapphire Wafer |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4 weeks |
| Material | 99.999％ Al2O3 | Size | Customized |
| Vision Light Transmissivity | 90％ | Suraface | DSP |
| TTV | ≤ 10um | Industry | LED chip manufacturing, Optical Windows and sensors |
| Brand Name | ZMSH | Model Number | 6inch Sapphire Wafer |
| Certification | rohs | Place of Origin | CHINA |
| High Light | Power Electronics Sapphire Wafer ，150mm Sapphire Wafer ，350μm Sapphire Wafer | ||
Product Description
6inch Sapphire Wafer DSP Diameter 150mm Thickness 350μm For Power Electronics
The 6-inch sapphire wafer is a large-format optical-grade substrate fabricated from single-crystal aluminum oxide (α-Al₂O₃) via Edge-defined Film-fed Growth (EFG) or Kyropoulos (KY) methods, with standardized dimensions of 150mm±0.2mm diameter and customizable thickness (0.3-1.0mm). As a critical substrate for third-generation semiconductors, the 6-inch sapphire wafer combines high optical transmittance (>85% in visible spectrum), low lattice mismatch (13% with GaN), and exceptional mechanical stability, making it ideal for manufacturing high-brightness LEDs, Micro-LEDs, and power electronic devices. Its large-area format significantly enhances epitaxial production efficiency while reducing per-chip costs, driving advancements in optoelectronics and semiconductor industries.
Key Characteristics
1. 6inch sapphire wafer of superior Crystal Quality:
· Dislocation density <10³ cm⁻² with surface roughness Ra<0.3nm (C-plane polished), meeting atomic-level flatness requirements for GaN epitaxy.
· Crystal orientation accuracy ±0.1° (available in C-, R-, and A-plane orientations).
2. 6inch sapphire wafer of optical Performance:
· 85% transmittance in visible spectrum (400-800nm) and >80% in UV range (250-400nm), suitable for UV photonic devices.
· Customizable Double-Side Polished (DSP) or Patterned Sapphire Substrate (PSS) structures to enhance LED light extraction efficiency by >30%.
3. 6inch sapphire wafer of thermal/Mechanical Stability:
· Melting point 2040℃ with matched CTE (5.3×10⁻⁶/℃ to GaN), minimizing thermal stress cracks during epitaxy.
· Plasma-resistant for MOCVD/PECVD deposition processes.
4. 6inch sapphire wafer of large-Area Advantage:
· 50% more usable chip area per 6-inch wafer versus 4-inch equivalents, substantially reducing unit production costs.
Technical Parameters
| Property | 6inch |
| Diameter | 150±0.1mm |
| Thickness | 350±15um |
| 500 ± 15 um | |
| 1000±15um | |
| Roughness | Ra ≤ 0.2nm |
| Warp | ≤ 15um |
| TTV | ≤ 10um |
| Scratch/Dig | 20/10 |
| Polish | DSP (Double Side Polished); SSP(Single Side Polished) |
| Shape | Round, Flat 16mm；OF length 22mm; OF Length 30/32.5mm; OF Length47.5mm; NOTCH; NOTCH; |
| Edge Form | 45°,C Shape |
| Material | Sapphire crystal, Fused Quartz JGS1/JGS2; BF33, D263; EXG glass. |
| Remarks | All specifications above can be customized upon your request |
Primary Applications
1. LED Manufacturing:
6inch sapphire wafer as the primary substrate for GaN epitaxy, 6-inch sapphire wafers enable high-yield production of high-brightness LEDs and Mini/Micro-LED display chips, supporting next-gen ultra-HD displays.
2. Power Electronics:
6inch sapphire wafer is used in GaN-on-sapphire HEMT devices for 5G base stations and EV power inverters requiring high-frequency/high-power operation.
3. Optical Components:
When precision-polished, 6inch sapphire wafer serves as extreme-environment windows (spacecraft) or UV sensor substrates with radiation resistance.
4. Semiconductor Equipment:
6inch sapphire wafer utilized as corrosion-resistant, high-insulation (resistivity >10¹⁴ Ω·cm) carrier plates for etching/ion implantation systems.
FAQ
1. Q: Why choose 6inch sapphire wafers for Micro-LED production?
A: 6-inch sapphire wafers provide 50% more usable area than 4-inch wafers with Ra≤0.2nm surface finish, enabling high-yield Micro-LED manufacturing.
2. Q: Are 6inch sapphire wafers suitable for GaN power devices?
A: Yes, their low lattice mismatch (13% with GaN) and thermal stability (CTE 5.3×10⁻⁶/°C) optimize performance for power electronics.
TAG: #6inch Sapphire Wafer, #Optical Glass, #Wear-Resistant, #High Transmittance, #Customized, #90% Transmittance, #DSP, #Sapphire Glass, #Micro-LED, #Diameter 150mm, #Thickness 350μm, #Ra ≤ 0.2nm
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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