Customized SiC Ceramic End Effector For Wafer Handling

Product Specification

SiC Ceramic End Effector for Wafer Handling

The Silicon Carbide (SiC) Ceramic End Effector is a high-performance wafer handling tool designed for semiconductor manufacturing, photovoltaic production, and advanced electronics assembly. Utilizing SiC's exceptional properties—including high stiffness, low thermal expansion, and superior chemical resistance—this end effector ensures ultra-clean, stable, and precise wafer transfer in vacuum, high-temperature, and corrosive environments.

Compared to traditional materials (e.g., aluminum or quartz), SiC ceramic end effectors offer:
- Zero particle contamination (critical for EUV lithography).
- High rigidity (Young’s modulus > 400 GPa), minimizing vibration-induced wafer misalignment.
- Corrosion resistance to acids, plasmas, and reactive gases (e.g., in CVD/PVD chambers).
- Thermal stability (operating range: -200°C to 1,600°C), ideal for extreme processes.

Features of SiC Ceramic End Effector for Wafer Handling

1. Ultra-High Hardness and Wear Resistance
- Vickers hardness of 2800 HV, approaching diamond (3000 HV) and significantly exceeding quartz (820 HV) and alumina (1500 HV), enabling long-term use without generating wear debris that could scratch wafer surfaces.
- Fine grain structure (4-10 μm) ensures a smooth surface (Ra <0.2μm), meeting the ultra-clean process requirements for EUV lithography.

2. Exceptional Mechanical Strength
- Flexural strength of 450 MPa and compressive strength of 3900 MPa allow it to support 300mm wafers (weighing ~128g) without bending deformation, preventing wafer misalignment or breakage.
 

3. Outstanding Thermal Stability
- Withstands temperatures up to 1600°C in oxidizing atmospheres and 1950°C in inert gases, far exceeding the limits of metal end effectors (typically <500°C).

4. Chemical Inertness
- Resists all acids (except HF/HNO₃ mixtures) and alkalis, making it ideal for wet cleaning stations and corrosive process environments like CVD chambers (SiH₄, NH₃).
 

5. Contamination-Free Performance

- Particle generation <0.1/cm² (per SEMI F57 standards), 100x lower than aluminum end effectors.

- Density of 3.14 g/cm³ (vs. 2.7 g/cm³ for aluminum), enabling high-speed robotic handling without compromising rigidity.

6. Customization Capabilities
- Geometry: Flat, notch-aligned, or edge-gripping designs for 150mm-450mm wafers.
- Coatings: Optional anti-reflective (AR) or hydrophobic layers for specialized applications.

Specifications

Applications of SiC Ceramic End Effector

1. Semiconductor Manufacturing
✔ EUV Lithography
- Particle-free wafer handling – SiC’s smooth surface (Ra <0.02μm) prevents defects in extreme ultraviolet (EUV) lithography.
- Compatible with vacuum environments – No outgassing, ensuring clean transfers in high-end chip fabrication.

✔ High-Temperature Processes
- Diffusion furnaces & annealing – Withstands 1,600°C (oxidizing) and 1,950°C (inert) without deformation.
- Ion implantation – Radiation-resistant, maintaining structural integrity under ion bombardment.

✔ Wet & Dry Etching
- Resists acids (HF, HNO₃) and plasma – No corrosion in CVD/PVD chambers.
- No metal contamination – Critical for FinFET and 3D NAND production.

2. Power Electronics (SiC/GaN Wafer Processing)
✔ SiC Epitaxy
- Thermal expansion matching (CTE = 4.3×10⁻⁶/K) prevents wafer warpage in 1,500°C+ MOCVD reactors.
- Non-reactive with process gases (SiH₄, NH₃, HCl).

✔ GaN-on-SiC Devices
- High stiffness (420 GPa) minimizes vibration-induced misalignment.
- Electrically insulating (10⁶–10⁸ Ω·cm) for RF and power device handling.

3. Photovoltaic & LED Production
✔ Thin-Film Solar Cells
- Corrosion-resistant in CdTe and CIGS deposition environments.
- Low thermal expansion ensures stability in rapid thermal processing (RTP).

✔ Mini/Micro-LED Transfer
- Gentle handling of fragile wafers – Prevents micro-cracks in <50μm-thick epi-wafers.
- Cleanroom-compatible – Zero particle shedding (SEMI F57 compliant).

4. MEMS & Advanced Packaging
✔ 3D IC Integration
- Precise placement of chiplets with <1μm alignment accuracy.
- Non-magnetic – Safe for magnet-sensitive MEMS devices.

✔ Wafer-Level Packaging
- Resists flux and soldering fumes – No degradation in reflow ovens.

5. Industrial & Research Applications

• ### **✔ Vacuum Robotics (AMHS)**

- Replaces aluminum in **automated material handling systems (AMHS)** for 300mm fabs.
- **Lightweight (3.21 g/cm³)** yet rigid, enabling high-speed transfers.

### **✔ Quantum Computing Research**
- **Cryogenic compatibility** (–200°C) for superconducting qubit handling.
- **Non-conductive variants** prevent interference with sensitive electronics.

FAQ

Q1: Why choose SiC over aluminum or quartz end effectors?
- Aluminum: Generates particles and oxidizes in harsh environments.- Quartz: Brittle and thermally unstable compared to SiC.

Q2: Can SiC end effectors handle 450mm wafers?
Yes, with custom designs

Q3: Customization options?

- Geometry: Flat, notch-aligned, or edge-gripping designs.
- Coatings: Anti-reflective (AR) or hydrophobic layers.