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SHANGHAI FAMOUS TRADE CO.,LTD

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China 8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type
China 8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type

  1. China 8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type
  2. China 8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type
  3. China 8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type

8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type

  1. MOQ: 25
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000pcs per month
Delivery Time 2-4 weeks
Packaging Details package in 100-grade cleaning room
Diameter 200mm
Thickness 500 ±25μm
Epitaxial Thickness 5-20μm (customizable)
Surface Defect Density ≤0.5/cm²
Electron Mobility ≥1000 cm²/(V·s)
Supported Devices MOSFET, SBD, JBS, IGBT
Brand Name ZMSH
Model Number 8inch SiC Epitaxial Wafer
Certification rohs
Place of Origin CHINA

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  1. Product Details
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Product Specification

Payment Terms T/T Supply Ability 1000pcs per month
Delivery Time 2-4 weeks Packaging Details package in 100-grade cleaning room
Diameter 200mm Thickness 500 ±25μm
Epitaxial Thickness 5-20μm (customizable) Surface Defect Density ≤0.5/cm²
Electron Mobility ≥1000 cm²/(V·s) Supported Devices MOSFET, SBD, JBS, IGBT
Brand Name ZMSH Model Number 8inch SiC Epitaxial Wafer
Certification rohs Place of Origin CHINA
High Light 4H-N SiC Epitaxial Wafer ,8 inch SiC Epitaxial Wafer ,200mm SiC Epitaxial Wafer

 

Product summary of 8inch SiC epitaxial wafer

 

 

8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type

 

 

 

As a core material supplier in China's SiC industry chain, ZMSH independently develops 8-inch SiC epitaxial wafers based on a mature large-diameter wafer growth technology platform. Utilizing Chemical Vapor Deposition (CVD), a uniform single-crystal film is formed on our high-purity SiC substrate. Key features include:

 

  • Epitaxial layer thickness: 5-20μm (±3% uniformity)
  • Doping concentration deviation: <5%
  • Surface killer defect density: <0.5/cm²
  • Low background concentration: <1×10¹⁴ cm⁻³
  • BPD conversion efficiency: >99%

 

Compared to traditional 6-inch wafers, the 8-inch wafer increases usable area by 78%, reducing unit device costs by ~30% through automated production, making it ideal for EVs, industrial power supplies, and other large-scale applications.

 

 


 

Product specifications of 8inch SiC epitaxial wafer

 

 

Parameter

 

Specification

 

Diameter

 

200mm

 

Thickness

 

500 ±25μm

 

Epitaxial Thickness

 

5-20μm (customizable)

 

Thickness Uniformity

 

≤3%

 

Doping Uniformity (n-type)

 

≤5%

 

Surface Defect Density

 

≤0.5/cm²

 

Surface Roughness (Ra)

 

≤0.5 nm (10μm×10μm AFM scan)

 

Breakdown Field

 

≥3 MV/cm

 

Electron Mobility

 

≥1000 cm²/(V·s)

 

Carrier Concentration

 

5×10¹³~1×10¹⁹ cm⁻³ (n-type)

 

Crystal Orientation

 

4H-SiC (off-axis ≤0.5°)

 

Buffer Layer Resistivity

 

1×10¹⁸ Ω·cm (n-type)

 

Automotive Certification

 

IATF 16949 compliant

 

HTRB Test (175°C/1000h)

 

Parameter drift ≤0.5%

 

Supported Devices

 

MOSFET, SBD, JBS, IGBT

 

 

 


 

Key features of 8inch SiC epitaxial wafer

 

1. Precision Process Control

  • Closed-loop gas flow & real-time temperature monitoring enable nanoscale thickness/doping control, 8inch SiC epitaxial wafer supporting 600-3300V device designs.

 

2. Ultra-Low Defect Density

  • Surface defects <0.2/cm², dislocation density ~10³ cm⁻³, ensuring <1% performance degradation after 100k thermal cycles.

 

3. Material Compatibility

  • Optimized for 4H-SiC, 8inch SiC epitaxial wafer is customizable n-type/semi-insulating layers, meeting stringent requirements for R<sub>ON</sub> (<2 mΩ·cm²) and breakdown strength (>3 MV/cm).

 

4. Environmental Stability

  • Corrosion-resistant passivation maintains <0.5% electrical drift at 85°C/85% RH for 1000h.

 

 


 

​​Application of 8inch SiC epitaxial wafer

 

 

1. Electric Vehicles

  • Core material for traction inverters & OBCs, enabling 800V platforms with 95%+ efficiency and 600kW peak charging.

 

2. Solar/Energy Storage

  • 99% efficient string inverters reduce system losses by 50%, boosting project IRR by 3-5%.

 

3. Industrial Power

  • 8inch SiC epitaxial wafer is enables >100kHz switching in server PFC and traction converters, achieving 100W/in³ power density.

 

4. 5G Communications

  • Low-loss substrate for GaN RF devices, 8inch SiC epitaxial wafer is improving base station PA efficiency to 75% with multi-channel signal integrity.

 

 


 

Related product recommendations

 

 

ZMSH's 6inch SiC epitaxial wafers feature high-quality 4H-SiC single-crystal films grown via CVD on premium substrates, offering 5-30μm thickness with ≤3% uniformity and defect density <0.5/cm². Optimized for 650V-3.3kV power devices (MOSFET/SBD), they enable 20% lower Ron and 15% higher switching efficiency than silicon solutions, ideal for EV chargers and industrial converters.

 

 

 

 

 


 

FAQ of 8inch SiC epitaxial wafer

 

 

1. Q: What are the advantages of 8inch SiC epitaxial wafers over 6inch?
     A: 8-inch wafers provide 78% more usable area, reducing chip costs by ~30% through higher yield and better economies of scale for EVs and power devices.

 

 

2. Q: How does 8inch SiC wafer defect density compare to silicon?
     A: Advanced 8inch SiC epi-wafers achieve <0.5 defects/cm² vs silicon’s <0.1/cm², with BPD conversion >99% ensuring power device reliability.

 

 

 

Tags: #8inch SiC Epitaxial Wafer, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type

  

 
 

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...

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Get in touch with us

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1810,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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