SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pcs per month |
| Delivery Time | 2-4 weeks |
| Packaging Details | package in 100-grade cleaning room |
| Diameter | 200mm |
| Thickness | 500 ±25μm |
| Epitaxial Thickness | 5-20μm (customizable) |
| Surface Defect Density | ≤0.5/cm² |
| Electron Mobility | ≥1000 cm²/(V·s) |
| Supported Devices | MOSFET, SBD, JBS, IGBT |
| Brand Name | ZMSH |
| Model Number | 8inch SiC Epitaxial Wafer |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pcs per month |
| Delivery Time | 2-4 weeks | Packaging Details | package in 100-grade cleaning room |
| Diameter | 200mm | Thickness | 500 ±25μm |
| Epitaxial Thickness | 5-20μm (customizable) | Surface Defect Density | ≤0.5/cm² |
| Electron Mobility | ≥1000 cm²/(V·s) | Supported Devices | MOSFET, SBD, JBS, IGBT |
| Brand Name | ZMSH | Model Number | 8inch SiC Epitaxial Wafer |
| Certification | rohs | Place of Origin | CHINA |
| High Light | 8inch SiC Epitaxial Substrate ，8inch SiC Epitaxial ，8inch SiC MOS Grade | ||
8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter
As a pivotal enabler of third-generation semiconductor advancement, our 8-inch SiC epitaxial wafers achieve dual breakthroughs in material performance and manufacturing efficiency. With a 78% larger usable area (200mm) vs. 6-inch wafers and defect density <0.2/cm² through localized production, they reduce SiC device costs by >30%. Adopted by leading Chinese manufacturers, these wafers now power EVs and smart grids, driving domestic substitution and global competitiveness.
| Parameter
| Specification
|
| Diameter
| 200mm
|
| Thickness
| 500 ±25μm
|
| Epitaxial Thickness
| 5-20μm (customizable)
|
| Thickness Uniformity
| ≤3%
|
| Doping Uniformity (n-type)
| ≤5%
|
| Surface Defect Density
| ≤0.5/cm²
|
| Surface Roughness (Ra)
| ≤0.5 nm (10μm×10μm AFM scan)
|
| Breakdown Field
| ≥3 MV/cm
|
| Electron Mobility
| ≥1000 cm²/(V·s)
|
| Carrier Concentration
| 5×10¹³~1×10¹⁹ cm⁻³ (n-type)
|
| Crystal Orientation
| 4H-SiC (off-axis ≤0.5°)
|
| Buffer Layer Resistivity
| 1×10¹⁸ Ω·cm (n-type)
|
| Automotive Certification
| IATF 16949 compliant
|
| HTRB Test (175°C/1000h)
| Parameter drift ≤0.5%
|
| Supported Devices
| MOSFET, SBD, JBS, IGBT
|
1. Process Innovation
2. Material Breakthroughs
3. Environmental Robustness
1. Electric Vehicles
2. Ultra-Fast Charging
3. Aerospace Power
4. Quantum Computing
1. 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade
2. 6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication
1. Q: What are the key advantages of 8-inch SiC epitaxial wafers?
A: 8-inch SiC epitaxial wafers enable higher power density and lower manufacturing costs compared to 6-inch wafers, supporting 150% more die per wafer and 30% reduced material waste.
2. Q: Which industries use 8-inch SiC epitaxial wafers?
A: Critical for EV inverters, solar inverters, and 5G base stations due to 10× higher thermal conductivity and 3× wider bandgap than silicon.
Tags: #8inch SiC Epitaxial Wafer, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type, #MOS Grade, #Prime Grade, #Large Diameter
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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