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SHANGHAI FAMOUS TRADE CO.,LTD

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China 8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter
China 8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter

  1. China 8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter
  2. China 8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter
  3. China 8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter

8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter

  1. MOQ: 25
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000pcs per month
Delivery Time 2-4 weeks
Packaging Details package in 100-grade cleaning room
Diameter 200mm
Thickness 500 ±25μm
Epitaxial Thickness 5-20μm (customizable)
Surface Defect Density ≤0.5/cm²
Electron Mobility ≥1000 cm²/(V·s)
Supported Devices MOSFET, SBD, JBS, IGBT
Brand Name ZMSH
Model Number 8inch SiC Epitaxial Wafer
Certification rohs
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000pcs per month
Delivery Time 2-4 weeks Packaging Details package in 100-grade cleaning room
Diameter 200mm Thickness 500 ±25μm
Epitaxial Thickness 5-20μm (customizable) Surface Defect Density ≤0.5/cm²
Electron Mobility ≥1000 cm²/(V·s) Supported Devices MOSFET, SBD, JBS, IGBT
Brand Name ZMSH Model Number 8inch SiC Epitaxial Wafer
Certification rohs Place of Origin CHINA
High Light 8inch SiC Epitaxial Substrate ,8inch SiC Epitaxial ,8inch SiC MOS Grade

 

Product summary of 8inch SiC epitaxial wafer

 

 

8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter

 

 

 

As a pivotal enabler of third-generation semiconductor advancement, our 8-inch SiC epitaxial wafers achieve dual breakthroughs in material performance and manufacturing efficiency. With a 78% larger usable area (200mm) vs. 6-inch wafers and defect density <0.2/cm² through localized production, they reduce SiC device costs by >30%. Adopted by leading Chinese manufacturers, these wafers now power EVs and smart grids, driving domestic substitution and global competitiveness.

 

 

 


 

Product specifications of 8inch SiC epitaxial wafer

 

 

Parameter

 

Specification

 

Diameter

 

200mm

 

Thickness

 

500 ±25μm

 

Epitaxial Thickness

 

5-20μm (customizable)

 

Thickness Uniformity

 

≤3%

 

Doping Uniformity (n-type)

 

≤5%

 

Surface Defect Density

 

≤0.5/cm²

 

Surface Roughness (Ra)

 

≤0.5 nm (10μm×10μm AFM scan)

 

Breakdown Field

 

≥3 MV/cm

 

Electron Mobility

 

≥1000 cm²/(V·s)

 

Carrier Concentration

 

5×10¹³~1×10¹⁹ cm⁻³ (n-type)

 

Crystal Orientation

 

4H-SiC (off-axis ≤0.5°)

 

Buffer Layer Resistivity

 

1×10¹⁸ Ω·cm (n-type)

 

Automotive Certification

 

IATF 16949 compliant

 

HTRB Test (175°C/1000h)

 

Parameter drift ≤0.5%

 

Supported Devices

 

MOSFET, SBD, JBS, IGBT

 

 

 


 

Key features of 8inch SiC epitaxial wafer

 

 

1. Process Innovation

  • Achieves 68.66μm/h epitaxial growth rate (25% faster than imported tools) via domestic MOCVD, with <50μm warpage through low-stress bonding for automated dicing. This high-throughput process enables 20% faster production cycles compared to conventional methods.

 

2. Material Breakthroughs

  • Graded carrier concentration (5×10¹³~1×10¹⁹cm⁻³) reduces SiC MOSFET R<sub>DS(on)</sub> to <25mΩ·mm², outperforming 6-inch wafers by 18%. The optimized doping profile also enhances switching efficiency by 15% at high frequencies (>100kHz).

 

3. Environmental Robustness

  • Moisture-resistant passivation maintains electrical stability >1000h at 85°C/85% RH, enabling tropical energy storage systems. This performance is validated by MIL-STD-810G humidity testing protocols.

 

 

 

 


 

​​Application of 8inch SiC epitaxial wafer

 

1. Electric Vehicles

  • Enables 800V traction inverters with 97% efficiency, 350kW peak power, and 1000km range.

 

2. Ultra-Fast Charging

  • Integrates 1200V SiC modules in liquid-cooled chargers for 600kW/10-minute 500km recharge.

 

3. Aerospace Power

  • Radiation-hardened modules for satellites (-55°C~200°C, 200W/in³), supporting deep-space missions.

 

4. Quantum Computing

  • Stable operation at 4K in dilution fridges, extending qubit coherence >1000μs.

 

 


 

Related product recommendations

 

1. 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade

 

 

 

 

 

 

2. 6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication

 

 


 

FAQ of 8inch SiC epitaxial wafer

 

 

1. Q: ​​What are the key advantages of 8-inch SiC epitaxial wafers?​​

A​​: 8-inch SiC epitaxial wafers enable ​​higher power density​​ and ​​lower manufacturing costs​​ compared to 6-inch wafers, supporting ​​150% more die per wafer​​ and ​​30% reduced material waste​​.

 

 

2. Q: ​​Which industries use 8-inch SiC epitaxial wafers?​​ ​​

A​​: Critical for ​​EV inverters​​, ​​solar inverters​​, and ​​5G base stations​​ due to ​​10× higher thermal conductivity​​ and ​​3× wider bandgap​​ than silicon.

 

 

 

Tags: #8inch SiC Epitaxial Wafer, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type, #MOS Grade, #Prime Grade, #Large Diameter

  

 
 

Company Details

Bronze Gleitlager

,

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...

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Get in touch with us

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1810,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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