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HongAn Microwave Co., Ltd.

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MOS Capacitors

Manufacturer of a wide range of products which include 10pF 50V Bordered Single Layer Capacitor Millimeter Wave 5G E Band Capacitor For,150pF 20V MOS Capacitor Halogen Free Ceramic Chip Capacitor With S Parameter,High Breakdown Vo...

Quality 10pF 50V Bordered Single Layer Capacitor Millimeter Wave 5G E Band Capacitor For for sale

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10pF 50V Bordered Single Layer Capacitor Millimeter Wave 5G E Band Capacitor For

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Rated Voltage 50 V DC
Supply Ability
Operating Temperature -55°C to +125°C
Adhesive Process Conductive Epoxy H20E (Cure: 120°C / 30 min)
Bottom Metallization TiW-Pt-Au (≥2.5 µm Au) — Pt barrier
Delivery Time 3-5 working days for stock, 2-4 weeks for production
Capacitance 10 pF ±10%
VCC <10 ppm/V (COG/NPO)
Payment Terms L/C,D/A,D/P,T/T,
Brand Name Hoan
Model Number HACC100S15V500
Certification ISO 9001:2015
Place of Origin Shaanxi, China

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Quality 150pF 20V MOS Capacitor Halogen Free Ceramic Chip Capacitor With S Parameter for sale

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150pF 20V MOS Capacitor Halogen Free Ceramic Chip Capacitor With S Parameter

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Voltage Rating 20V DC
Backside Metallization TiW-Pt-Au, Au 1.0µm min
Mounting Type Wire Bondable / Eutectic Die Attach
Operating Temperature -55°C to +125°C
Delivery Time 5-7 working days for stock, 3-4 weeks for production
Capacitance 150pF ±10%
Supply Ability
Dielectric Thermal SiO₂, 300nm
Payment Terms L/C,D/A,D/P,T/T,
Chip Dimensions 0.50 x 0.50 x 0.15mm
Place of Origin Shannxi, China
Model Number HACC151S20V101
Brand Name Hoan
Certification ISO 9001:2015, RoHS, REACH, Halogen-Free

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Quality High Breakdown Voltage MOS Capacitors Ultra Miniature Low Leakage 50V Wire Bondable Capacitor SLC Chip for sale

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High Breakdown Voltage MOS Capacitors Ultra Miniature Low Leakage 50V Wire Bondable Capacitor SLC Chip

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Interface Trap Density 1e10 cm^-2 eV^-1
Substrate Type p-type Silicon
Structure Metal-Oxide-Semiconductor
Temperature Range -40°C to 125°C
Payment Terms L/C,D/A,D/P,T/T,
Delivery Time 3-5 working days for stock, 2-4 weeks for production
Capacitance Range 1 pF to 100 pF
Leakage Current < 1 nA
Frequency Range 1 kHz to 1 MHz
Certification ISO 9001:2015
Brand Name Hoan
Place of Origin Shannxi,China
Model Number HACC101S10V500

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Quality Custom RF Chip Capacitor Radiation Hardened Space Capacitor Flat Q Response Digital Wafer Map for sale

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Custom RF Chip Capacitor Radiation Hardened Space Capacitor Flat Q Response Digital Wafer Map

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Capacitance Range From a few pF to several nF
Structure Metal-Oxide-Semiconductor
Oxide Material Silicon dioxide (SiO2) or high-k dielectrics
Metal Gate Material Aluminum, polysilicon, or metal alloys
Delivery Time 7-10 working days space grade
Application Used in semiconductor device characterization and memory devices
Frequency Response Up to GHz range
Supply Ability
Dielectric Constant 3.9 for SiO2, higher for high-k materials
Payment Terms L/C,D/A,D/P,T/T,
Oxide Thickness Typically 5-100 nm
Brand Name Hoan
Place of Origin Shannxi,China
Model Number HACC100S10V101
Certification ISO 9001:2015, RoHS, REACH, ESA ESCC

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Quality Rapid Prototyping MOS Capacitors Flexible Customization 10 pF Capacitor Eco Friendly Supply Chain Compliant Chip for sale

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Rapid Prototyping MOS Capacitors Flexible Customization 10 pF Capacitor Eco Friendly Supply Chain Compliant Chip

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Rated Voltage 100V DC
Design Architecture Single-Sided Bordered (Margin)
Chip Size 0.50 x 0.50 x 0.15mm
Compliance RoHS, REACH, Halogen-Free
Dielectric Withstanding Voltage >250V (250% rated)
Top Metallization TiW-Au (≥2.5µm Au)
Delivery Time 3-5 working days for stock, 3-4 weeks for prototype production
Payment Terms L/C,D/A,D/P,T/T,
Capacitance 10pF ±10% (custom ±5% available)
Place of Origin Shannxi,China
Brand Name Hoan
Model Number HACC100S10V101
Certification ISO 9001:2015, RoHS, REACH

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Quality Flat Q Response Low ESR Capacitor Ultra Low Dielectric Absorption Eutectic Backside Ceramic Chip Capacitor for sale

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Flat Q Response Low ESR Capacitor Ultra Low Dielectric Absorption Eutectic Backside Ceramic Chip Capacitor

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Temperature Range -40°C to 125°C
Operating Voltage 0 to 5 V
Gate Material Polysilicon
Leakage Current 1 nA
Dielectric Material Silicon Dioxide (SiO2)
Oxide Thickness 10 nm
Payment Terms L/C,D/A,D/P,T/T,
Delivery Time 5-7 working days prototype
Substrate Type P-type Silicon
Supply Ability
Package Type Chip-scale package
Brand Name Hoan
Certification ISO 9001:2015, RoHS, REACH
Model Number HACC-CUSTOM-BM
Place of Origin Shannxi,China

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Quality Ultra Low Loss MOS Capacitors Excellent TCC VCC Stability 100pF 50V High Q Capacitor At RF for sale

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Ultra Low Loss MOS Capacitors Excellent TCC VCC Stability 100pF 50V High Q Capacitor At RF

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Rated Voltage 50V DC
Operating Temperature -55°C to +125°C
Mounting Type Wire Bondable / Conductive Epoxy / Soldering
Delivery Time 3-5 working days for stock, 2-4 weeks for production
Q Factor at 1MHz Min. 1000
Capacitance 100pF ±20%
Design Architecture Double-Sided Bordered (Margin)
Payment Terms L/C,D/A,D/P,T/T,
Place of Origin Shannxi,China
Brand Name Hoan
Model Number HACC101S10V500
Certification ISO 9001:2015

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Quality Ultra Low ESR Fine Capacitance Step Wire Bond Capacitor Precision Tuning High Capacitance Capacitor For Multi Gigabit for sale

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Ultra Low ESR Fine Capacitance Step Wire Bond Capacitor Precision Tuning High Capacitance Capacitor For Multi Gigabit

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Package Type Die form
Gate Material Polysilicon
Breakdown Voltage 10 V
Substrate Doping Concentration 1e15 cm^-3
Gate Width 10 µm
Oxide Thickness 10 nm
Dielectric Material Silicon Dioxide (SiO2)
Supply Ability
Frequency Range 1 kHz to 1 MHz
Operating Voltage 0 - 5 V
Delivery Time 5-7 working days prototype
Substrate Type P-type Silicon
Payment Terms L/C,D/A,D/P,T/T,
Leakage Current 1 nA
Capacitance 1 pF
Temperature Range -40°C to 125°C
Gate Length 1 µm
Interface Trap Density 1e10 cm^-2 eV^-1
Brand Name Hoan
Certification ISO 9001:2015, RoHS, REACH
Place of Origin Shannxi,China
Model Number HACC-CUSTOM-ES

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Quality High Current Long Life MOS Capacitors Unlimited Shelf Life 15V 220 pF Capacitor Single Layer RF Chip for sale

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High Current Long Life MOS Capacitors Unlimited Shelf Life 15V 220 pF Capacitor Single Layer RF Chip

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Chip Dimensions 0.50 x 0.50 x 0.15mm
Mounting Type Wire Bondable / Solder or Epoxy Die Attach
Supply Ability
Top / Backside Metallization TiW+Au 2.5µm / TiW-Pt-Au 1.0µm
Delivery Time 5-7 working days for stock, 3-4 weeks for production
Capacitance 220pF ±10%
Payment Terms D/A,L/C,D/P,,T/T
Operating Temperature -55°C to +125°C
Brand Name Hoan
Model Number HACC221S15V500
Certification ISO 9001:2015, RoHS
Place of Origin Shannxi, China

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Quality Extreme Voltage Dielectric Single Layer Ceramic Capacitor Wafer Level High Capacity Capacitor With Gel Pak Delivery for sale

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Extreme Voltage Dielectric Single Layer Ceramic Capacitor Wafer Level High Capacity Capacitor With Gel Pak Delivery

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wire_bond_pull_strength >3.0g Au, >2.5g Al
Supply Ability
Substrate Material Silicon (p-type or n-type)
Delivery Time 5-7 working days prototype
Gate Material Polysilicon or Metal
Payment Terms L/C,D/A,D/P,T/T,
oem_odm_capability Full OEM/ODM from dielectric to wafer delivery
TCC <30 ppm/C (NPO/COG equivalent), -55C to +125C
thickness_tolerance ±2% wafer-level, ±1% within-die, ellipsometer verified
Brand Name Hoan
Place of Origin Shannxi,China
Model Number HACC-CUSTOM-DV
Certification ISO 9001:2015, RoHS, REACH

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  • HongAn Microwave Co., Ltd.
  • F7, Building 2, Xinkai Industrial Park, Jinye 2nd Road, High-tech Zone, Xi'an
  • https://www.hoaninductor.com/

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