HongAn Microwave Co., Ltd.
Products
Manufacturer of a wide range of products which include Robust High Breakdown Voltage MOS Capacitors Ultra Miniature Low Leakage 50V Wire Bondable SLC,Custom RF Chip MOS Capacitors Radiation Hardened Space Flat Q Response Digital W...
MOQ: 10 Pieces
Price:
| Interface Trap Density | 1e10 cm^-2 eV^-1 |
| Substrate Type | p-type Silicon |
| Leakage Current | < 1 nA |
| Structure | Metal-Oxide-Semiconductor |
| Frequency Range | 1 kHz to 1 MHz |
| Temperature Range | -40°C to 125°C |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Delivery Time | 3-5 working days for stock, 2-4 weeks for production |
| Capacitance Range | 1 pF to 100 pF |
| Certification | ISO 9001:2015 |
| Brand Name | Hoan |
| Place of Origin | Shannxi，China |
| Model Number | HACC101S10V500 |
MOQ: 10 Pieces
Price:
| Capacitance Range | From a few pF to several nF |
| Structure | Metal-Oxide-Semiconductor |
| Oxide Material | Silicon dioxide (SiO2) or high-k dielectrics |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Oxide Thickness | Typically 5-100 nm |
| Metal Gate Material | Aluminum, polysilicon, or metal alloys |
| Frequency Response | Up to GHz range |
| Supply Ability | |
| Application | Used in semiconductor device characterization and memory devices |
| Delivery Time | 7-10 working days space grade |
| Dielectric Constant | 3.9 for SiO2, higher for high-k materials |
| Certification | ISO 9001:2015, RoHS, REACH, ESA ESCC |
| Model Number | HACC100S10V101 |
| Place of Origin | Shannxi，China |
| Brand Name | Hoan |
MOQ: 10 Pieces
Price:
| Rated Voltage | 100V DC |
| Design Architecture | Single-Sided Bordered (Margin) |
| Delivery Time | 3-5 working days for stock, 3-4 weeks for prototype production |
| Chip Size | 0.50 x 0.50 x 0.15mm |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Capacitance | 10pF ±10% (custom ±5% available) |
| Compliance | RoHS, REACH, Halogen-Free |
| Dielectric Withstanding Voltage | >250V (250% rated) |
| Top Metallization | TiW-Au (≥2.5µm Au) |
| Brand Name | Hoan |
| Model Number | HACC100S10V101 |
| Certification | ISO 9001:2015, RoHS, REACH |
| Place of Origin | Shannxi,China |
MOQ: 10 Pieces
Price:
| Temperature Range | -40°C to 125°C |
| Operating Voltage | 0 to 5 V |
| Gate Material | Polysilicon |
| Delivery Time | 5-7 working days prototype |
| Substrate Type | P-type Silicon |
| Package Type | Chip-scale package |
| Leakage Current | 1 nA |
| Oxide Thickness | 10 nm |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Supply Ability | |
| Dielectric Material | Silicon Dioxide (SiO2) |
| Brand Name | Hoan |
| Place of Origin | Shannxi，China |
| Certification | ISO 9001:2015, RoHS, REACH |
| Model Number | HACC-CUSTOM-BM |
MOQ: 10 Pieces
Price:
| Rated Voltage | 50V DC |
| Operating Temperature | -55°C to +125°C |
| Delivery Time | 3-5 working days for stock, 2-4 weeks for production |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Mounting Type | Wire Bondable / Conductive Epoxy / Soldering |
| Q Factor at 1MHz | Min. 1000 |
| Capacitance | 100pF ±20% |
| Design Architecture | Double-Sided Bordered (Margin) |
| Place of Origin | Shannxi，China |
| Brand Name | Hoan |
| Model Number | HACC101S10V500 |
| Certification | ISO 9001:2015 |
MOQ: 10 Pieces
Price:
| Package Type | Die form |
| Capacitance | 1 pF |
| Breakdown Voltage | 10 V |
| Substrate Doping Concentration | 1e15 cm^-3 |
| Gate Material | Polysilicon |
| Gate Width | 10 µm |
| Oxide Thickness | 10 nm |
| Dielectric Material | Silicon Dioxide (SiO2) |
| Interface Trap Density | 1e10 cm^-2 eV^-1 |
| Delivery Time | 5-7 working days prototype |
| Leakage Current | 1 nA |
| Supply Ability | |
| Frequency Range | 1 kHz to 1 MHz |
| Operating Voltage | 0 - 5 V |
| Temperature Range | -40°C to 125°C |
| Gate Length | 1 µm |
| Substrate Type | P-type Silicon |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Brand Name | Hoan |
| Certification | ISO 9001:2015, RoHS, REACH |
| Place of Origin | Shannxi，China |
| Model Number | HACC-CUSTOM-ES |
MOQ: 10 Pieces
Price:
| Chip Dimensions | 0.50 x 0.50 x 0.15mm |
| Mounting Type | Wire Bondable / Solder or Epoxy Die Attach |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Supply Ability | |
| Top / Backside Metallization | TiW+Au 2.5µm / TiW-Pt-Au 1.0µm |
| Capacitance | 220pF ±10% |
| Payment Terms | D/A,L/C,D/P,,T/T |
| Operating Temperature | -55°C to +125°C |
| Brand Name | Hoan |
| Certification | ISO 9001:2015, RoHS |
| Place of Origin | Shannxi, China |
| Model Number | HACC221S15V500 |
MOQ: 10 Pieces
Price:
| wire_bond_pull_strength | >3.0g Au, >2.5g Al |
| Gate Material | Polysilicon or Metal |
| Delivery Time | 5-7 working days prototype |
| Supply Ability | |
| thickness_tolerance | ±2% wafer-level, ±1% within-die, ellipsometer verified |
| TCC | <30 ppm/C (NPO/COG equivalent), -55C to +125C |
| Substrate Material | Silicon (p-type or n-type) |
| Payment Terms | L/C,D/A,D/P,T/T, |
| oem_odm_capability | Full OEM/ODM from dielectric to wafer delivery |
| Certification | ISO 9001:2015, RoHS, REACH |
| Place of Origin | Shannxi，China |
| Model Number | HACC-CUSTOM-DV |
| Brand Name | Hoan |
MOQ: 10 Pieces
Price:
| Voltage Rating | 15V DC |
| Mounting Type | Wire Bondable / Solder or Epoxy Die Attach |
| Operating Temperature | -55°C to +125°C |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Capacitance | 100pF ±10% |
| Supply Ability | |
| Intrinsic ESL | <0.05nH |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Model Number | HACC101S15V500 |
| Brand Name | Hoan |
| Place of Origin | Shannxi, China |
| Certification | ISO 9001:2015, RoHS |
MOQ: 10 Pieces
Price:
| Supply Ability | |
| SubstrateType | P-type or N-type Silicon |
| Payment Terms | L/C,D/A,D/P,T/T, |
| LeakageCurrent | Less than 1 nA/cm² |
| DielectricConstant | Approximately 3.9 |
| CapacitanceRange | 1 pF to 1 nF |
| PackageType | Wafer-level device |
| Delivery Time | 5-7 working days prototype |
| OxideMaterial | Silicon Dioxide (SiO2) |
| Place of Origin | Shannxi，China |
| Certification | ISO 9001:2015, RoHS, REACH |
| Brand Name | Hoan |
| Model Number | HACC-CUSTOM-GS |
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