HongAn Microwave Co., Ltd.
Products
Manufacturer of a wide range of products which include High Breakdown Voltage MOS Capacitors Ultra Miniature Low Leakage 50V Wire,Custom RF Chip Capacitor Radiation Hardened Space Capacitor Flat Q Response,10pF 50V Bordered Single...
MOQ: 10 Pieces
Price:
| Interface Trap Density | 1e10 cm^-2 eV^-1 |
| Substrate Type | p-type Silicon |
| Structure | Metal-Oxide-Semiconductor |
| Temperature Range | -40°C to 125°C |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Delivery Time | 3-5 working days for stock, 2-4 weeks for production |
| Capacitance Range | 1 pF to 100 pF |
| Leakage Current | < 1 nA |
| Frequency Range | 1 kHz to 1 MHz |
| Certification | ISO 9001:2015 |
| Brand Name | Hoan |
| Place of Origin | Shannxi，China |
| Model Number | HACC101S10V500 |
MOQ: 10 Pieces
Price:
| Capacitance Range | From a few pF to several nF |
| Structure | Metal-Oxide-Semiconductor |
| Oxide Material | Silicon dioxide (SiO2) or high-k dielectrics |
| Metal Gate Material | Aluminum, polysilicon, or metal alloys |
| Delivery Time | 7-10 working days space grade |
| Application | Used in semiconductor device characterization and memory devices |
| Frequency Response | Up to GHz range |
| Supply Ability | |
| Dielectric Constant | 3.9 for SiO2, higher for high-k materials |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Oxide Thickness | Typically 5-100 nm |
| Brand Name | Hoan |
| Place of Origin | Shannxi，China |
| Model Number | HACC100S10V101 |
| Certification | ISO 9001:2015, RoHS, REACH, ESA ESCC |
MOQ: 10 Pieces
Price:
| Rated Voltage | 50 V DC |
| Supply Ability | |
| Operating Temperature | -55°C to +125°C |
| Adhesive Process | Conductive Epoxy H20E (Cure: 120°C / 30 min) |
| Bottom Metallization | TiW-Pt-Au (≥2.5 µm Au) — Pt barrier |
| Delivery Time | 3-5 working days for stock, 2-4 weeks for production |
| Capacitance | 10 pF ±10% |
| VCC | <10 ppm/V (COG/NPO) |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Brand Name | Hoan |
| Model Number | HACC100S15V500 |
| Certification | ISO 9001:2015 |
| Place of Origin | Shaanxi, China |
MOQ: 10 Pieces
Price:
| Voltage Rating | 20V DC |
| Backside Metallization | TiW-Pt-Au, Au 1.0µm min |
| Mounting Type | Wire Bondable / Eutectic Die Attach |
| Operating Temperature | -55°C to +125°C |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Capacitance | 150pF ±10% |
| Supply Ability | |
| Dielectric | Thermal SiO₂, 300nm |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Chip Dimensions | 0.50 x 0.50 x 0.15mm |
| Place of Origin | Shannxi, China |
| Model Number | HACC151S20V101 |
| Brand Name | Hoan |
| Certification | ISO 9001:2015, RoHS, REACH, Halogen-Free |
MOQ: 10 Pieces
Price:
| Rated Voltage | 50 V DC |
| Adhesive Process | Conductive Epoxy H20E (Cure: 120°C / 30 min) |
| Self-Resonant Frequency | >25 GHz |
| Payment Terms | L/C,D/A,D/P,T/T, |
| TDDB Lifetime | >10 years @ 50V, 125°C |
| Supply Ability | |
| Delivery Time | 3-5 working days for stock, 2-4 weeks for production |
| Capacitance | 220 pF ±10% |
| Place of Origin | Shaanxi, China |
| Brand Name | Hoan |
| Model Number | HACC221S15V500 |
| Certification | ISO 9001:2015 |
MOQ: 10 Pieces
Price:
| Voltage Rating | 50V DC |
| Operating Temperature | -55°C to +125°C |
| Supply Ability | |
| Mounting Type | Wire Bondable / Eutectic Die Attach |
| Payment Terms | T/T,L/C,PayPal, |
| Top Metallization | Au, 2.5µm min |
| Capacitance | 4700pF ±10% (4.7nF) |
| Backside Metallization | Au, 1.0µm min |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Model Number | HACC472S50V500 |
| Certification | ISO 9001:2015, RoHS |
| Place of Origin | Shannxi, China |
| Brand Name | Hoan |
MOQ: 10
Price:
| Metallization Structure | Top: TiW-Au (>=2.5µm); Bottom: TiW-Pt-Au (>=2.5µm) |
| Substrate Type | P-type Silicon |
| Package Type | Chip |
| Leakage Current | 1 nA |
| Adhesive Process | Conductive Epoxy H20E (Cure: 120°C / 30 min) |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Wire Bonding Clearance | Gold wire bond position ≥25 µm from electrode edge |
| Outline Dimensions | 0.38 × 0.38 × 0.15 mm |
| Brand Name | Hoan |
| Place of Origin | china |
| Model Number | HACC220S15V500 |
MOQ: 10 Pieces
Price:
| Bond Pull Strength | >5.0 gf (MIL-STD-883 Method 2011) |
| Insulation Resistance | ≥10⁴ MΩ @ Rated Voltage |
| Adhesive Process | H20E Epoxy / AuSn Eutectic / Sintered-Ag |
| Delivery Time | 3-5 working days for stock, 2-4 weeks for production |
| Dissipation Factor | ≤1.5% @ 1kHz, 1Vrms |
| Supply Ability | |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Capacitance | 22 pF ±10% |
| Brand Name | Hoan |
| Certification | ISO 9001:2015 |
| Model Number | HACC220S15V600 |
| Place of Origin | Shaanxi, China |
MOQ: 10
Price:
| Frequency Range | 0.01 - 6.0 GHz |
| Substrate Doping Concentration | 1e15 cm^-3 |
| Gate Width | 10 µm |
| Gate Material | Polysilicon |
| Design Architecture | Symmetrical Double-Sided Bordered |
| Adhesive Process | Conductive Epoxy H20E (Cure: 120°C / 30 min) |
| Payment Terms | L/C,D/A,T/T,D/P, |
| Rated Voltage | 50 V |
| Brand Name | Hoan |
| Model Number | HACC102S30V500 |
| Place of Origin | china |
MOQ: 10Pieces
Price:
| Voltage Rating | 35V DC |
| Chip Size | 0.5 x 0.5 mm |
| Substrate | High-Resistivity Silicon |
| Dielectric Type | SiO2 (Silicon Dioxide) |
| Supply Ability | |
| Delivery Time | 3-5 working days for stock, 2-4 weeks for production |
| Payment Terms | L/C,D/A,D/P,T/T, |
| Operating Temperature | -55°C to +125°C |
| Capacitance | 1000pF |
| Place of Origin | Shaanxi, China |
| Brand Name | Hoan |
| Model Number | HACC102S35V500 |
| Certification | ISO 9001:2015 |
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