HongAn Microwave Co., Ltd.
| Rated Voltage | 200 V DC |
| Operating / Storage Temperature | -55°C to +125°C / -65°C to +150°C |
| RoHS | Compliant (EU 2015/863) |
| Supply Ability | |
| Leakage Current @ 25°C | <10 nA at 200 V DC |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Payment Terms | L/C,D/A,D/P,T/T |
| Capacitance | 100 pF ±10% (±5% available) |
| Leakage Current @ 125°C | <100 nA at 200 V DC |
| Packaging Details | |
| Model Number | HACC101S200V801 |
| Certification | ISO 9001:2015, RoHS |
| Brand Name | Hoan |
| Place of Origin | Shannxi, China |
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Product Specification
| Rated Voltage | 200 V DC | Operating / Storage Temperature | -55°C to +125°C / -65°C to +150°C |
| RoHS | Compliant (EU 2015/863) | Supply Ability | |
| Leakage Current @ 25°C | <10 nA at 200 V DC | Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Payment Terms | L/C,D/A,D/P,T/T | Capacitance | 100 pF ±10% (±5% available) |
| Leakage Current @ 125°C | <100 nA at 200 V DC | Packaging Details | |
| Model Number | HACC101S200V801 | Certification | ISO 9001:2015, RoHS |
| Brand Name | Hoan | Place of Origin | Shannxi, China |
| High Light | Low Quantum Capacitance MOS Capacitor 100pF ，200V Ultra-High Dielectric Breakdown MOS Capacitor ，Single Layer Chip HV RF MOS Capacitor | ||
Product definition: The HACC101S200V801 is a single-layer metal-oxide-semiconductor (MOS) capacitor built on a high-resistivity float-zone silicon substrate with a dense, thermally grown silicon dioxide (SiO2) dielectric. It delivers 100 pF (±10%) at a 200 V DC working voltage in a 0.50 mm × 0.50 mm × 0.15 mm wire-bondable chip. The same device family is also described as a single layer capacitor (SLC) chip, an RF chip capacitor, a wire bondable capacitor, or a MOS chip capacitor.
Its two defining characteristics are a low quantum capacitance effect and an ultra-high dielectric breakdown field (>10 MV/cm). Together they support a flat, ultra-linear C-V response and a high 200 V rating in a compact die.
In any MOS structure the measured capacitance is a series combination of the oxide capacitance (Cox) and the semiconductor capacitance, which includes the quantum capacitance (Cq) associated with the finite density of states at the silicon surface. When Cq is comparable to Cox the total capacitance becomes bias- and frequency-dependent and drops below the expected oxide value. The HACC101S200V801 is designed with a heavily doped float-zone silicon electrode and an optimized interface so that Cq stays more than 10× larger than Cox. The quantum capacitance effect is therefore negligible and the device behaves as a nearly ideal oxide capacitor: the measured value equals the geometric oxide capacitance, flat across the full bias range and stable with frequency.
The dielectric is a high-quality thermal SiO2 with low defect density and an intrinsic breakdown field exceeding 10 MV/cm. This dielectric robustness supports a continuous 200 V DC rating and a dielectric withstanding voltage above 500 V DC (250% of rated) in a compact 20 mil wire-bondable chip, providing generous headroom for high-voltage RF signal chains, bias injection, and transient events. The dielectric withstanding voltage is verified on 100% of production units.
Temperature coefficient of capacitance is approximately +35 ppm/°C, nearly linear from -55°C to +125°C, with a low DC bias coefficient (<10 ppm/V). Q exceeds 2000 at 1 MHz, ESL is below 0.05 nH, and leakage current stays below 10 nA at 200 V, making the device suitable for precision RF bypass, DC blocking, and matching networks.
| Parameter | Value | Test Condition |
|---|---|---|
| Capacitance | 100 pF ±10% | 1 MHz, 1.0 Vrms |
| Rated DC Voltage | 200 V | Continuous |
| Dielectric Breakdown Field | >10 MV/cm | Intrinsic, thermal SiO2 |
| Dielectric Withstanding Voltage | >500 V DC | 1 minute, 25°C, 100% tested |
| Quantum Capacitance Effect | Negligible (Cq >10× Cox) | — |
| TCC | +35 ppm/°C | -55°C to +125°C |
| DC Bias Coefficient | <10 ppm/V | 0 V to rated voltage |
| Q Factor | >2000 @ 1 MHz | Typical |
| Dissipation Factor | ≤0.15% | 1 kHz, 1 Vrms |
| ESL | <0.05 nH | De-embedded |
| SRF | >8 GHz | Chip-level, typical |
| Leakage Current | <10 nA | 200 V DC, 25°C |
| Chip Dimensions | 0.50 × 0.50 × 0.15 mm | ±25 µm |
| Operating Temperature | -55°C to +125°C | — |
| RoHS | Compliant | EU 2015/863 |
| Test | Condition | Result |
|---|---|---|
| Wire Bond Pull | 25 µm Au wire, destructive | >6 gf |
| Moisture Sensitivity | J-STD-020 | MSL 1 |
| TDDB (time-dependent dielectric breakdown) | 125°C, rated voltage | >10 years lifetime |
| Temperature Range | -55°C to +125°C | Full parametric compliance |
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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