HongAn Microwave Co., Ltd.
| Packaging Details | |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| Payment Terms | L/C,D/A,D/P,T/T |
| Supply Ability | |
| Mounting Type | Wire Bondable / AuSn Eutectic / Solder / Conductive Epoxy |
| Testing | 100% production tested (C, DF, leakage, DWV); KGD wafer map per lot |
| Chip Dimensions | 0.65 × 0.65 × 0.20 mm (±25 µm); custom geometry up to 4:1 aspect ratio |
| ESD Tolerance | >2 kV HBM, Class 2 (JESD22-A114) |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Metallization | TiW-Au top (≥2.5 µm Au) / oxygen-free pure-Au ohmic backside (AuSn / solder / silver epoxy) |
| Brand Name | Hoan |
| Place of Origin | Shaanxi, China |
| Model Number | HACC471S100V701 |
| Certification | ISO 9001:2015, RoHS |
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Product Specification
| Packaging Details | Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C | |
| Payment Terms | L/C,D/A,D/P,T/T | Supply Ability | |
| Mounting Type | Wire Bondable / AuSn Eutectic / Solder / Conductive Epoxy | Testing | 100% production tested (C, DF, leakage, DWV); KGD wafer map per lot |
| Chip Dimensions | 0.65 × 0.65 × 0.20 mm (±25 µm); custom geometry up to 4:1 aspect ratio | ESD Tolerance | >2 kV HBM, Class 2 (JESD22-A114) |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production | Metallization | TiW-Au top (≥2.5 µm Au) / oxygen-free pure-Au ohmic backside (AuSn / solder / silver epoxy) |
| Brand Name | Hoan | Place of Origin | Shaanxi, China |
| Model Number | HACC471S100V701 | Certification | ISO 9001:2015, RoHS |
| High Light | oxygen-free MOS capacitor 470pF ，low ESR MOS capacitor 100V ，single layer chip capacitor energy harvesting | ||
The HACC471S100V701 is a 470 pF ±10% single-layer MOS capacitor rated at 100 V DC, fabricated on a conductive silicon substrate with an oxygen-free pure-gold ohmic backside contact. By eliminating interfacial oxide at the backside metal-to-silicon junction, the device achieves low interfacial and series resistance, which directly improves discharge efficiency in energy-harvesting storage and pulsed-power applications. A MOS capacitor is a single-layer capacitor formed by a metal-oxide-semiconductor structure (thermal silicon dioxide on a conductive silicon substrate), storing energy as ½CV². Low ESR and high Q ensure that stored charge is delivered to the load with minimal loss.
| Nominal Capacitance | 470 pF ±10% (1 kHz, 1.0 Vrms); tighter tolerance and matched sets available |
| Rated Voltage | 100 V DC |
| Dielectric Withstanding Voltage | 250 V DC (250% rated, 5 s, 100% tested) |
| Temperature Coefficient (TCC) | +35 ppm/°C over -55°C to +200°C |
| Dissipation Factor | ≤0.15% at 1 kHz, 1.0 Vrms |
| Q Factor | >2000 at 1 MHz |
| ESR | <0.1 Ω @ 1 GHz (low interfacial resistance design) |
| Intrinsic Chip ESL | <0.05 nH (de-embedded) |
| Chip-Level SRF | >1 GHz (470 pF) |
| Leakage Current | <10 nA at 25°C; <500 nA at 200°C (at rated voltage) |
| Insulation Resistance | ≥104 MΩ at rated voltage, 25°C |
| ESD Tolerance | >2 kV HBM, Class 2 per JESD22-A114 |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| Standard Die Size | 0.65 × 0.65 × 0.20 mm (±25 µm); custom geometry, aspect ratio up to 4:1 |
| Metallization | TiW-Au top (≥2.5 µm Au, wire bondable); oxygen-free pure-Au ohmic backside |
Energy-harvesting storage and pulsed discharge in piezo, photovoltaic and thermoelectric systems; snubber and clamp networks of power converters; gate-drive decoupling in GaN and SiC modules; RF power amplifier bias networks; wireless sensor nodes and self-powered IoT modules requiring low-leakage, high-efficiency charge delivery.
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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