HongAn Microwave Co., Ltd.
| Temperature Coefficient (TCC) | +35 ppm/°C (-55°C to +200°C) |
| Payment Terms | L/C,D/A,D/P,T/T |
| Voltage Rating | 50 V DC |
| Mounting Type | Wire Bondable / Eutectic Die Attach (AuSn or conductive epoxy) |
| Dielectric Withstanding Voltage | 125 V DC (250% rated, 5 s, 100% tested) |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Dissipation Factor | ≤0.15% @ 1 kHz, 1.0 Vrms |
| Testing | 100% production tested (C, DF, leakage, DWV); KGD wafer map per lot |
| Capacitance | 470 pF ±10% (±5% or matched sets available on request) |
| Model Number | HACC471S50V402 |
| Brand Name | Hoan |
| Place of Origin | Shaanxi, China |
| Certification | ISO 9001:2015, RoHS |
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Product Specification
| Temperature Coefficient (TCC) | +35 ppm/°C (-55°C to +200°C) | Payment Terms | L/C,D/A,D/P,T/T |
| Voltage Rating | 50 V DC | Mounting Type | Wire Bondable / Eutectic Die Attach (AuSn or conductive epoxy) |
| Dielectric Withstanding Voltage | 125 V DC (250% rated, 5 s, 100% tested) | Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Dissipation Factor | ≤0.15% @ 1 kHz, 1.0 Vrms | Testing | 100% production tested (C, DF, leakage, DWV); KGD wafer map per lot |
| Capacitance | 470 pF ±10% (±5% or matched sets available on request) | Model Number | HACC471S50V402 |
| Brand Name | Hoan | Place of Origin | Shaanxi, China |
| Certification | ISO 9001:2015, RoHS | ||
| High Light | MOS capacitor 470pF 50V dielectric ，single layer chip MOS capacitor ，rugged MOS capacitor ESD protection | ||
The HACC471S50V402 is a 470 pF ±10% single-layer MOS (metal-oxide-semiconductor) capacitor rated at 50 V DC, fabricated on float-zone silicon (>1000 Ω·cm) with an amorphous thermal SiO2 dielectric and TiW-Au / TiW-Pt-Au metallization. A MOS capacitor is a single-layer capacitor formed by a metal-oxide-semiconductor structure (thermal silicon dioxide grown on a conductive silicon substrate), valued in RF and power hybrid circuits for its low ESL, stable capacitance and high insulation resistance.
This device is designed for hybrid microcircuits and power modules exposed to repetitive voltage transients and humid operating environments, where stable capacitance, high insulation resistance and arc-over-free operation under DC bias are required. Standard chip outline is 0.60 mm × 0.60 mm × 0.18 mm (±25 µm); custom capacitance, voltage rating, die geometry and metallization are available on request.
Overvoltage robustness of a MOS capacitor is defined by measurable, production-verified parameters. The HACC471S50V402 is qualified and 100% production tested as follows:
| Nominal Capacitance | 470 pF ±10% (1 kHz, 1.0 Vrms); tighter tolerance ±5% or matched sets on custom orders |
| Rated Voltage | 50 V DC |
| Dielectric Withstanding Voltage | 125 V DC (250% rated, 5 s, 100% tested) |
| Temperature Coefficient (TCC) | +35 ppm/°C over -55°C to +200°C |
| Dissipation Factor | ≤0.15% at 1 kHz, 1.0 Vrms |
| Q Factor | >2000 at 1 MHz; >200 at 1 GHz |
| ESR at 1 GHz | <0.1 Ω |
| Intrinsic Chip ESL | <0.05 nH (de-embedded); chip-level SRF >1 GHz for 470 pF |
| Leakage Current | <10 nA at 25°C; <500 nA at 200°C (at rated voltage) |
| Insulation Resistance | ≥104 MΩ at rated voltage, 25°C |
| ESD Tolerance | >2 kV HBM, Class 2 per JESD22-A114 |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| Standard Die Size | 0.60 × 0.60 × 0.18 mm (±25 µm); custom geometry, aspect ratio up to 4:1 |
| Metallization | TiW-Au top (≥2.5 µm Au, wire bondable); TiW-Pt-Au backside for AuSn eutectic / conductive epoxy |
DC bias decoupling and transient suppression in GaN and SiC gate driver stages; snubber and clamp networks of motor drives and industrial power converters; RF power amplifier bias networks; outdoor wireless and base-station modules exposed to humidity; avionics and satellite payload hybrid microcircuits requiring transient and moisture robustness.
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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