HongAn Microwave Co., Ltd.
| Chip Dimensions | 0.55 × 0.55 × 0.18 mm (±25 µm); custom geometry up to 4:1 aspect ratio |
| Payment Terms | L/C,D/A,D/P,T/T |
| CTE Match | Silicon 2.6 ppm/°C, matched to GaN/SiC power substrates |
| Mounting Type | Wire Bondable / AuSn Eutectic / Solder / Conductive Epoxy |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Capacitance Matching | Sub-1% matched sets across wafer / wafer-to-wafer (digital wafer map) |
| Metallization | TiW-Au top (≥2.5 µm Au) / TiW-Pt-Au backside (Au-only available) |
| Place of Origin | Shaanxi, China |
| Brand Name | Hoan |
| Certification | ISO 9001:2015, RoHS |
| Model Number | HACC221S100V502 |
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Product Specification
| Chip Dimensions | 0.55 × 0.55 × 0.18 mm (±25 µm); custom geometry up to 4:1 aspect ratio | Payment Terms | L/C,D/A,D/P,T/T |
| CTE Match | Silicon 2.6 ppm/°C, matched to GaN/SiC power substrates | Mounting Type | Wire Bondable / AuSn Eutectic / Solder / Conductive Epoxy |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C | Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Capacitance Matching | Sub-1% matched sets across wafer / wafer-to-wafer (digital wafer map) | Metallization | TiW-Au top (≥2.5 µm Au) / TiW-Pt-Au backside (Au-only available) |
| Place of Origin | Shaanxi, China | Brand Name | Hoan |
| Certification | ISO 9001:2015, RoHS | Model Number | HACC221S100V502 |
| High Light | Sub-1% capacitance matched MOS capacitor ，220pF 100V MOS capacitor ，CTE optimized single layer chip capacitor | ||
The HACC221S100V502 is a 220 pF ±10% single-layer MOS (metal-oxide-semiconductor) capacitor rated at 100 V DC, fabricated on float-zone silicon (>1000 Ω·cm) with 300 nm-class thermal SiO2 dielectric and TiW-Au / TiW-Pt-Au metallization. Standard chip outline is 0.55 mm × 0.55 mm × 0.18 mm (±25 µm). It is engineered for wide-bandgap power modules where pair-to-pair capacitance symmetry and thermo-mechanical reliability under power cycling determine circuit performance.
Because the silicon MOS structure is formed directly on a single-crystal silicon substrate, its coefficient of thermal expansion (CTE, 2.6 ppm/°C) is inherently close to that of silicon-carbide and GaN-on-SiC power devices — an advantage over alumina-based ceramic capacitors when co-packaged on power substrates.
| Nominal Capacitance | 220 pF ±10% (1 kHz, 1.0 Vrms); matched sets with <1% spread available |
| Rated Voltage | 100 V DC |
| Dielectric Withstanding Voltage | 250 V DC (250% rated, 5 s, 100% tested) |
| Temperature Coefficient (TCC) | +35 ppm/°C over -55°C to +200°C |
| Dissipation Factor | ≤0.15% at 1 kHz, 1.0 Vrms |
| Q Factor | >2000 at 1 MHz; >200 at 1 GHz |
| ESR at 1 GHz | <0.1 Ω |
| Intrinsic Chip ESL | <0.05 nH (de-embedded); chip-level SRF >1.5 GHz; system SRF >500 MHz with 0.5 mm Au bond wire |
| Leakage Current | <10 nA at 25°C; <500 nA at 200°C (at rated voltage) |
| Insulation Resistance | ≥104 MΩ at rated voltage, 25°C |
| ESD Tolerance | >2 kV HBM, Class 2 per JESD22-A114 |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| Standard Die Size | 0.55 × 0.55 × 0.18 mm (±25 µm); custom geometry, aspect ratio up to 4:1 |
| Metallization | TiW-Au top (≥2.5 µm Au, wire bondable); TiW-Pt-Au backside (AuSn / solder / silver epoxy) or Au-only backside |
Gate drive and snubber decoupling in GaN and SiC power modules; hybrid power modules and traction inverters; on-board chargers and high-density DC-DC converters; RF power amplifier bias networks; and any co-packaged power assembly where CTE match, matched capacitance and low inductance are required.
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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