HongAn Microwave Co., Ltd.
| Chip Dimensions | 0.75 × 0.75 × 0.20 mm (±25µm) |
| Supply Ability | |
| Voltage Rating | 100V DC |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Testing | 100% production tested (C, DF, leakage, DWV); KGD wafer map per lot |
| Packaging Details | |
| SRF | >1.5GHz chip-level; >600MHz with 0.5mm Au bond wire |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| TCC | +35 ppm/°C (-55°C to +200°C) |
| Intrinsic Chip ESL | <0.05nH (de-embedded) |
| Capacitance | 1000pF ±10% (±5% available) |
| Payment Terms | L/C,D/A,D/P,T/T |
| Model Number | HACC102S100V301 |
| Certification | ISO 9001:2015 |
| Brand Name | Hoan |
| Place of Origin | Shannxi, China |
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Product Specification
| Chip Dimensions | 0.75 × 0.75 × 0.20 mm (±25µm) | Supply Ability | |
| Voltage Rating | 100V DC | Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| Testing | 100% production tested (C, DF, leakage, DWV); KGD wafer map per lot | Packaging Details | |
| SRF | >1.5GHz chip-level; >600MHz with 0.5mm Au bond wire | Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| TCC | +35 ppm/°C (-55°C to +200°C) | Intrinsic Chip ESL | <0.05nH (de-embedded) |
| Capacitance | 1000pF ±10% (±5% available) | Payment Terms | L/C,D/A,D/P,T/T |
| Model Number | HACC102S100V301 | Certification | ISO 9001:2015 |
| Brand Name | Hoan | Place of Origin | Shannxi, China |
| High Light | dielectric passivation MOS capacitors ，1000 pF MOS capacitors ，100V single layer chip capacitors | ||
The HACC102S100V301 is a 1000pF ±10% single-layer MOS capacitor rated at 100V DC, fabricated on float-zone silicon (>1000 Ω·cm) with an amorphous thermal SiO2 dielectric and TiW-Au / TiW-Pt-Au metallization. Standard chip dimensions are 0.75mm × 0.75mm × 0.20mm (±25µm), with custom capacitance, voltage rating, die geometry (aspect ratio up to 4:1), and backside metallization available on request. It is engineered for hybrid microcircuits where humidity exposure, high DC bias, and reduced-pressure operation demand more from a chip capacitor than standard devices can deliver.
The exposed thermal SiO2 surface of a bare MOS capacitor is hydrophilic and can adsorb moisture and ionic contamination during assembly, which creates a surface leakage path and shifts the effective capacitance of the device. The HACC102S100V301 applies an advanced dielectric passivation layer over the full dielectric surface to suppress moisture adsorption and keep the device electrically stable:
High-voltage DC bias networks and decoupling in RF power amplifiers, DC blocking in microwave modules, satellite and space payload electronics, defense hybrid microcircuits, high-altitude avionics, and harsh-environment industrial controls where moisture, temperature extremes, and high bias voltage are present.
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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