Ultra Low Total Harmonic Distortion MOS Capacitors Zero Dielectric Dispersion

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Custom Options	0.5pF-4700pF, 15V-200V, die geometry to 4:1 aspect ratio, metallization, GDSII layout
Dielectric Absorption	<0.1% @ 1kHz
Voltage Rating	50V DC
Supply Ability
Intrinsic Chip ESL	<0.05nH (de-embedded)
Operating / Storage Temperature	-55°C to +125°C / -65°C to +150°C
Packaging Details
SRF	>10GHz chip-level; >1.5GHz with 0.5mm Au bond wire
Delivery Time	5-7 working days for stock, 3-4 weeks for production
Payment Terms	L/C,D/A,D/P,T/T
Capacitance	100pF ±10% (±5% available)
Chip Dimensions	0.50 × 0.50 × 0.15 mm (±25µm)
Brand Name	Hoan
Certification	ISO 9001:2015, RoHS
Place of Origin	Shannxi, China
Model Number	HACC101S50V601

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Product Specification


Custom Options	0.5pF-4700pF, 15V-200V, die geometry to 4:1 aspect ratio, metallization, GDSII layout	Dielectric Absorption	<0.1% @ 1kHz
Voltage Rating	50V DC	Supply Ability
Intrinsic Chip ESL	<0.05nH (de-embedded)	Operating / Storage Temperature	-55°C to +125°C / -65°C to +150°C
Packaging Details		SRF	>10GHz chip-level; >1.5GHz with 0.5mm Au bond wire
Delivery Time	5-7 working days for stock, 3-4 weeks for production	Payment Terms	L/C,D/A,D/P,T/T
Capacitance	100pF ±10% (±5% available)	Chip Dimensions	0.50 × 0.50 × 0.15 mm (±25µm)
Brand Name	Hoan	Certification	ISO 9001:2015, RoHS
Place of Origin	Shannxi, China	Model Number	HACC101S50V601
High Light	Ultra Low THD MOS Capacitors ，Zero Dielectric Dispersion MOS Capacitors ，100 pF 50V Single Layer Chip Capacitors

HACC101S50V601 100pF 50V MOS Capacitor Ultra Low Total Harmonic Distortion Zero Dielectric Dispersion Paraelectric SiO2 Single Layer Chip

The HACC101S50V601 is a 100pF ±10% single-layer MOS capacitor rated at 50V DC, fabricated on float-zone silicon (>1000 Ω·cm) with an amorphous paraelectric thermal SiO₂ dielectric and TiW-Au / TiW-Pt-Au metallization. Standard chip dimensions are 0.50mm × 0.50mm × 0.15mm (±25µm). Because thermal SiO₂ is paraelectric (no ferroelectric domains), the device exhibits an ultra-linear capacitance-versus-voltage characteristic and a frequency-independent permittivity, making it suitable for precision analog and mixed-signal circuits where capacitor-induced distortion and value shift cannot be tolerated.

Ultra-Low Total Harmonic Distortion for Analog Signal Paths

Any voltage-dependent capacitance modulates the signal passing through it and generates harmonic distortion. Ferroelectric ceramic dielectrics (X7R, X5R classes) change value by 30-80% under DC bias and therefore distort analog signals measurably. The paraelectric SiO₂ dielectric of the HACC101S50V601 has no ferroelectric domains and keeps the capacitance virtually constant versus bias voltage:

Ultra-linear CV characteristic: Capacitance change from 0V to the full 50V rating is below 0.05% (voltage coefficient <10 ppm/V), so the device adds no measurable C(V) nonlinearity to the signal path.
Low dissipation factor: ≤0.15% at 1kHz (1.0Vrms) and tanδ <0.001 at 1GHz, keeping resistive losses far below the level that would affect distortion or noise performance in precision circuits.
Low dielectric absorption: <0.1% at 1kHz. The dielectric stores negligible charge memory, so sample-and-hold circuits, integrators, and precision filters recover to true zero without voltage-error residue.
No aging drift: The paraelectric dielectric has no ferroelectric domain relaxation, so capacitance does not decay with time and does not require aging compensation in long-life instrumentation.

Electrical Characteristics and Reliability

Capacitance: 100pF ±10% (±5% available on custom orders)
Temperature coefficient (TCC): +35 ppm/°C over -55°C to +125°C
Q factor: >2000 at 1MHz, >300 at 1GHz
ESR at 1GHz: <0.08Ω; intrinsic chip ESL: <0.05nH (de-embedded)
SRF: >10GHz chip-level (de-embedded); >1.5GHz with 0.5mm Au bond wire
Leakage current: <10nA at 25°C at 50V DC; insulation resistance ≥10⁴ MΩ at rated voltage, 25°C
Wire bond pull strength: >6gf for 25µm Au wire (MIL-STD-883 Method 2011.7)
Moisture sensitivity: MSL 1 (unlimited floor life per J-STD-020)
ESD rating: Class 0 (HBM) per JESD22-A114 — handle with standard ESD precautions
Operating temperature: -55°C to +125°C; storage: -65°C to +150°C
Testing: 100% die tested per wafer lot (capacitance, DF, leakage, DWV), KGD wafer map available

Typical Applications

Precision analog and mixed-signal circuits: high-end audio signal paths, ADC/DAC reference decoupling and anti-alias filtering, active filters and equalizers, sample-and-hold circuits, precision instrumentation, servo and measurement systems, and wideband analog front ends that span audio through microwave frequencies.

Company Details

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Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...

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HongAn Microwave Co., Ltd.
F7, Building 2, Xinkai Industrial Park, Jinye 2nd Road, High-tech Zone, Xi'an
https://www.hoaninductor.com/

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