Ultra-Low Leakage 150pF 100V MOS Capacitor High Dielectric Breakdown Strength

Product Specification

HACC151S100V200 Ultra-Low Leakage MOS Capacitor: 150pF 100V with High Dielectric Breakdown Strength and Extreme Thermal Endurance

The HACC151S100V200 is a 150pF ±10% single-layer MOS capacitor rated at 100V DC, engineered for continuous operation at temperatures up to 200°C. Fabricated on float-zone silicon (>1000Ω·cm) with 300nm thermally-grown SiO2 dielectric, this device delivers industry-leading <10nA leakage current at 25°C along with >250V dielectric withstanding voltage. Chip dimensions are 0.50 x 0.50 x 0.15mm with TiW-Au top metallization (2.5µm minimum Au) and TiW-Pt-Au backside (1.0µm minimum Au, Pt diffusion barrier).

1. Ultra-Low Leakage Current - Sub-Nanoampere Performance

Leakage current in MOS capacitors is dominated by trap-assisted tunneling through the SiO2 dielectric and surface leakage along the chip edges. The HACC151S100V200 minimizes both mechanisms through optimized thermal oxidation and advanced passivation:

• Leakage at 25°C: <10nA at 100V DC - Exceptionally low compared to the industry-typical <10nA for equivalent-capacitance MOS capacitors. Achieved through ultra-low interface trap density from optimized dry oxidation with nitrogen annealing.
• Leakage at 200°C: <500nA at 100V DC - Maintained low leakage even at the extreme 200°C operating temperature. The thermal SiO2 dielectric wide bandgap (8.9eV) provides inherent high-temperature leakage suppression.
• Guard-ring edge passivation suppresses surface leakage currents along chip sidewalls, maintaining insulation integrity after 1000-hour HAST (130°C/85%RH) with less than 10% leakage degradation.

2. High Dielectric Breakdown Strength - 250% Margin for Mission-Critical Reliability

Dielectric breakdown is a leading field failure mechanism in high-voltage chip capacitors. The HACC151S100V200 eliminates this risk through conservative design margins:

• Rated Voltage: 100V DC continuous - Suitable for GaN power amplifier drain bias networks (28-50V) with 2-3x headroom, high-voltage DC-DC converter filtering, and pulsed power energy storage.
• Dielectric Withstanding Voltage (DWV): >250V DC (250% rated) - 100% production tested on every die with 5-second dwell. This 2.5x margin exceeds the standard 2x derating guideline recommended for high-reliability aerospace and defense applications.
• Intrinsic Dielectric Strength: >10MV/cm - The 300nm thermal SiO2 provides uniform field distribution without the internal electrode edge concentration effects that limit MLCC breakdown voltage. TDDB lifetime exceeds 10 years at 125°C and rated voltage.

3. Extreme Thermal Endurance - Continuous Operation from -55°C to +200°C

Conventional MOS capacitors are rated to 125°C maximum. The HACC151S100V200 extends this by 75°C through materials engineering:

• 200°C continuous operation - Qualified through 1000-hour HTOL at 200°C with 100V DC bias. Acceptance criteria: less than 2% capacitance shift, less than 2x initial leakage current. TiW diffusion barrier prevents Au-Si interdiffusion to >250°C, verified by Auger depth profiling.
• TCC: +35ppm/°C across -55°C to +200°C - Capacitance variation below ±0.9% across the full 255°C temperature span.
• AuSn eutectic recommended for >175°C - Conductive silver epoxy acceptable to 175°C; AuSn eutectic solder (280°C melting point) provides reliable die attach with zero degradation at 200°C.

Key Features

• Ultra-Low Leakage: <10nA at 25°C/100V, <500nA at 200°C/100V - ideal for precision bias networks and charge-sensitive circuits
• Insulation Resistance: ≥10⁴ MΩ at rated voltage — ensures reliable DC blocking in high-impedance circuits
• Storage Temperature: -65°C to +150°C — wide non-operating temperature range supports logistics and storage in uncontrolled environments
• High Breakdown Strength: >250V DWV (250% rated) with uniform field distribution - eliminates MLCC edge-concentration failure modes
• Extreme Thermal Endurance: 200°C continuous operation, 1000-hour HTOL qualified with less than 2% parametric shift
• SiO2 Dielectric Stability: Paraelectric with zero ferroelectric aging, near-zero dielectric absorption (<0.1%), and linear C-V characteristics
• Harsh Environment Qualified: 100% wafer-level tested for capacitance, leakage, and breakdown; MSL 1 unlimited floor life

Electrical Specifications (T = 25°C unless noted)

Typical Applications

• Downhole drilling and logging tools (150-200°C ambient) requiring DC blocking and bypass with stable parametric performance at formation temperatures
• Aerospace engine monitoring electronics operating in uncooled engine bay environments
• GaN-on-SiC power amplifier high-voltage drain bias decoupling (28-50V) with substantial voltage headroom
• High-voltage DC-DC converter output filtering where leakage current directly impacts conversion efficiency
• Industrial furnace and process control sensor electronics operating continuously at 175-200°C
• Scientific instrumentation for high-temperature physics experiments requiring sub-nA leakage and stable capacitance

Assembly Quick Reference

Die Attach: AuSn eutectic solder (300-320°C, N2/H2 forming gas) for >175°C operation. Conductive Ag epoxy (Epotek H20E, 120°C/30min) acceptable to 175°C. AuGe or AuSi pre-forms for highest-temperature applications.

Wire Bonding: 25µm Au thermosonic ball bonding (120-150°C stage, 15-35gf force, >6gf pull strength). Al wedge bonding not recommended for continuous 200°C operation.

Storage: Waffle pack or gel-pak, vacuum-sealed with nitrogen purge. MSL 1 unlimited floor life at 30°C/85%RH.

Contact us today with your voltage, capacitance, and environmental requirements. Standard 150pF 100V evaluation samples ship within 2-3 weeks. Custom values from 10pF to 1000pF, voltage ratings up to 200V, and extended temperature qualification to 225°C available with 4-6 week prototyping lead time.