Beijing Silk Road Enterprise Management Services Co., Ltd.
| Power Dissipation | - |
| Output Current | 600mA |
| Operating Temperature | -40℃~+100℃ |
| Isolation voltage(Vrms) | 3.75kV |
| Propagation Delay(tpd) | 200ns;200ns |
| Reverse Voltage | 5V |
| Load Type | MOSFET;IGBT |
| Rise Time | 35ns |
| Voltage - Supply | 10V~30V |
| Fall Time | 15ns |
| Voltage - Forward(Vf) | 1.57V |
| CMTI(kV/us) | 20kV/us |
| Number of Channels | 1 |
| Description | 600mA 5V 35ns 10V~30V 15ns 1.57V SO-6 Isolators - Gate Drivers RoHS |
| Mfr. Part # | TLP155 |
| Package | SO-6 |
| Model Number | TLP155 |
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Product Specification
| Power Dissipation | - | Output Current | 600mA |
| Operating Temperature | -40℃~+100℃ | Isolation voltage(Vrms) | 3.75kV |
| Propagation Delay(tpd) | 200ns;200ns | Reverse Voltage | 5V |
| Load Type | MOSFET;IGBT | Rise Time | 35ns |
| Voltage - Supply | 10V~30V | Fall Time | 15ns |
| Voltage - Forward(Vf) | 1.57V | CMTI(kV/us) | 20kV/us |
| Number of Channels | 1 | Description | 600mA 5V 35ns 10V~30V 15ns 1.57V SO-6 Isolators - Gate Drivers RoHS |
| Mfr. Part # | TLP155 | Package | SO-6 |
| Model Number | TLP155 |
The TLP155 is a gate driver photocoupler comprising a GaAlAs infrared LED and an integrated high-gain, high-speed photodetector. Packaged in SO6, it features an internal Faraday shield for 20kV/s common-mode transient immunity. This device is ideal for direct gate driving of IGBTs or power MOSFETs, offering buffered logic-type (push-pull) output with a peak output current of 0.6A.
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
| Maximum Ratings | ||||||
| Input Forward Current | IF | 20 | mA | |||
| Peak Transient Input Forward Current | IFPT | 1 | A | Pulse width 1s, 300pps | ||
| Input Power Dissipation | PD | 40 | mW | |||
| Input Junction Temperature | Tj | 125 | ||||
| Peak High-Level Output Current | IOPH | -0.6 | A | TA=-40 to 100 | ||
| Peak Low-Level Output Current | IOPL | 0.6 | A | TA=-40 to 100 | ||
| Output Voltage | VO | 35 | V | |||
| Supply Voltage | VCC | 35 | V | |||
| Output Power Dissipation | PO | 80 | mW | |||
| Output Junction Temperature | Tj | 125 | ||||
| Operating Temperature | Topr | -40 | 100 | |||
| Storage Temperature | Tstg | -55 | 125 | |||
| Lead Solder Temperature (10s) | Tsol | 260 | ||||
| Isolation Voltage (AC, 60s) | BVS | 3750 | Vrms | R.H.60% | ||
| Recommended Operating Conditions | ||||||
| Input Threshold Current (L/H) | IFLH | 10 | 15 | mA | ||
| Input Threshold Voltage (H/L) | VFHL | 0 | 0.8 | V | ||
| Supply Voltage | VCC | 10 | 30 | V | ||
| Peak High-Level Output Current | IOPH | -0.2 | A | |||
| Peak Low-Level Output Current | IOPL | 0.2 | A | |||
| Operating Temperature | Topr | -40 | 100 | |||
| Operating Frequency | f | 250 | kHz | |||
| Electrical Characteristics | ||||||
| Input Forward Voltage | VF | 1.40 | 1.57 | 1.80 | V | IF=10mA, TA=25 |
| Forward Voltage Temperature Coefficient | VF/TA | -1.8 | mV/ | IF=10mA | ||
| Input Reverse Current | IR | 10 | uA | VR=5V, TA=25 | ||
| Input Capacitance | Ct | 60 | pF | V=0V, f=1MHz, TA=25 | ||
| High-Level Output Voltage | VOH | 9.8 | 9.9 | V | IF=10mA, VCC=10V, IO=-100mA | |
| Low-Level Output Voltage | VOL | 0.06 | 0.2 | V | VF=0.8V, VCC=10V, IO=100mA | |
| High-Level Supply Current | ICCH | 1.7 | 3.0 | mA | IF=10mA, VCC=10 to 30V, VO=Open | |
| Low-Level Supply Current | ICCL | 2.1 | 3.0 | mA | IF=0mA, VCC=10 to 30V, VO=Open | |
| Input Threshold Current (L/H) | IFLH | 1.0 | 7.5 | mA | VCC=15V, VO>1V | |
| Input Threshold Voltage (H/L) | VFHL | 0.8 | V | VCC=15V, VO1V | ||
| Supply Voltage | VCC | 10 | 30 | V | ||
| Under Voltage Lockout Threshold+ | VUVLO+ | 7.9 | V | IF=10mA, VO>5V | ||
| Under Voltage Lockout Threshold- | VUVLO | 7 | V | IF=10mA, VO<5V | ||
| Under Voltage Lockout Hysteresis | UVLOHYS | 0.9 | V | |||
| Switching Characteristics | ||||||
| High-Level Propagation Delay | tPLH | 50 | 120 | 200 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF |
| Low-Level Propagation Delay | tPHL | 50 | 120 | 200 | ns | IF=100mA, VCC=20V, Rg=30, Cg=1nF |
| Propagation Delay Skew | tpsk | -85 | 85 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF | |
| Pulse Width Distortion | |tPHL-tPLH| | 5 | 50 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF | |
| Output Rise Time | tR | 35 | ns | IF=010mA, VCC=20V, Rg=30, Cg=1nF | ||
| Output Fall Time | tF | 15 | ns | IF=100mA, VCC=20V, Rg=30, Cg=1nF | ||
| Common Mode Rejection High-Level | CMH | 20 | kV/s | VCM=1000VP-P, IF=10mA, VCC=20V, TA=25, VO(MIN)=16V | ||
| Common Mode Rejection Low-Level | CML | 20 | kV/s | VCM=1000VP-P, IF=0mA, VCC=20V, TA=25, VO(MAX)=1V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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