| Power Dissipation | 295mW |
| Output Current | 3A |
| Operating Temperature | -40℃~+110℃ |
| Isolation voltage(Vrms) | 5kV |
| Propagation Delay(tpd) | 62ns;94ns |
| Reverse Voltage | 5V |
| Load Type | MOSFET |
| Voltage - Supply | 10V~30V |
| Rise Time | 30ns |
| Fall Time | 20ns |
| Voltage - Forward(Vf) | 1.4V |
| CMTI(kV/us) | 50kV/us |
| Description | 3A 5V 10V~30V 30ns 20ns 1.4V DIP-8 Isolators - Gate Drivers RoHS |
| Mfr. Part # | MP3182-G(B) |
| Package | DIP-8 |
| Model Number | MP3182-G(B) |
View Detail Information
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Product Specification
| Power Dissipation | 295mW | Output Current | 3A |
| Operating Temperature | -40℃~+110℃ | Isolation voltage(Vrms) | 5kV |
| Propagation Delay(tpd) | 62ns;94ns | Reverse Voltage | 5V |
| Load Type | MOSFET | Voltage - Supply | 10V~30V |
| Rise Time | 30ns | Fall Time | 20ns |
| Voltage - Forward(Vf) | 1.4V | CMTI(kV/us) | 50kV/us |
| Description | 3A 5V 10V~30V 30ns 20ns 1.4V DIP-8 Isolators - Gate Drivers RoHS | Mfr. Part # | MP3182-G(B) |
| Package | DIP-8 | Model Number | MP3182-G(B) |
The MP3182 Series is a high-speed MOSFET Gate Drive Optocoupler designed for efficient power switching applications. It features a 3.0A output current capability and high noise immunity, characterized by 50kV/s common mode rejection. With a wide operating temperature range of -40C to 110C and a flexible VDD input range of 10V to 30V, it offers optimized dynamic power dissipation and under-voltage lockout (UVLO) protection with hysteresis. This device is ideal for driving MOSFETs in applications such as Plasma Display Panels, high-performance DC/DC converters, UPS systems, and switching power supplies.
| Parameter | Symbol | Minimum | Typical | Maximum | Unit | Test Condition | Note |
|---|---|---|---|---|---|---|---|
| Features | |||||||
| Common Mode Rejection | 50 | kV/s | @ VCM = 2,000V | ||||
| Operating Temperature Range | Topr | -40 | 110 | C | |||
| Operating VDD Range | VDD-VSS | 10 | 30 | V | |||
| Maximum Switching Speed | 250 | kHz | |||||
| Description | |||||||
| Output Current | 3.0 | A | |||||
| Absolute Maximum Ratings | |||||||
| Forward Current | IF | 25 | mA | ||||
| Peak Transient Input Current | IF(TRAN) | 1.0 | A | 1s P.W, 300pps | 1 | ||
| Reverse Voltage | VR | 5 | V | ||||
| Input Power Dissipation | PI | 45 | mW | ||||
| Supply Voltage | VDD-VSS | 35 | V | ||||
| Output Voltage (Peak) | VO(PEAK) | VDD | V | ||||
| High Peak Output Current | IOH(PEAK) | 3.0 | A | 2 | |||
| Low Peak Output Current | IOL(PEAK) | 3.0 | A | 2 | |||
| Output Power Dissipation | PO | 250 | mW | ||||
| Total Power Dissipation | Ptot | 295 | mW | ||||
| Isolation Voltage | Viso | 5000 | Vrms | AC For 1 Minute, R.H. = 40 ~ 60% | 3 | ||
| Storage Temperature | Tstg | -55 | 125 | C | |||
| Soldering Temperature | Tsol | 260 | C | For 10 seconds | 4 | ||
| Recommended Operation Conditions | |||||||
| Operating Temperature | TA | -40 | 100 | C | |||
| Supply Voltage | VDD-VSS | 10 | 30 | V | |||
| Input Current (ON) | IF(ON) | 10 | 16 | mA | |||
| Input Voltage (OFF) | VF(OFF) | -3.6 | 0.8 | V | |||
| Electrical Optical Characteristics (VDD=30V, VSS=GND, TA=25C unless specified otherwise) | |||||||
| Forward Voltage | VF | 1.1 | 1.4 | 1.8 | V | IF=10mA | |
| Reverse Current | IR | 0.01 | 1 | A | VR=5V | ||
| Reverse Breakdown Voltage | BVR | 5 | V | IR=10A | |||
| Input Threshold Current | IFLH | 2.6 | 7.5 | mA | IO= 0mA, VO> 5V | ||
| Input Threshold Voltage | VFHL | 0.8 | 1.3 | V | IO= 0mA, VO< 5V | ||
| Input Capacitance | Cin | 60 | pF | VF=0, f=1MHz | |||
| High Level Supply Current | IDDH | 1.7 | 3.0 | mA | IF=10mA,VO=Open | ||
| Low Level Supply Current | IDDL | 2.0 | 3.0 | mA | VF=0.8V,VO= Open | ||
| High Level Output Voltage | VOH | VDD-0.3 | VDD-0.1 | V | IF=10mA,IO=-100mA | ||
| Low Level Output Voltage | VOL | 0.06 | 0.5 | V | IF= 0mA, IO= 100mA | ||
| High Level Output Current | IOH | -0.9 | -0.5 | A | VO= VDD-1V | 1 | |
| -2.5 | A | VO= VDD-6V | 2 | ||||
| Low Level Output Current | IOL | 0.5 | 1.2 | A | VO=VSS+1V | 1 | |
| 2.5 | A | VO=VSS+6V | 2 | ||||
| Under Voltage Lockout Threshold + | VUVLO+ | 7.1 | 7.9 | 8.5 | V | IF= 10mA, VO> 5V | |
| Under Voltage Lockout Threshold - | VUVLO- | 6.0 | 6.8 | 7.5 | V | IF= 10mA, VO< 5V | |
| UVLO Hysteresis | UVLOHYS | 1.1 | V | ||||
| Isolation Resistance | Riso | 10^9 | DC500V, 40 ~ 60%R.H. | ||||
| Switching Characteristics (VDD=30V, VSS=GND, TA=25C unless specified otherwise) | |||||||
| Propagation Delay Time to Output Low Level | TPHL | 50 | 94 | 200 | ns | IF=10mA, Cg= 10nF, Rg= 10, f= 250kHz, Duty = 50% | |
| Propagation Delay Time to Output High Level | TPLH | 50 | 62 | 200 | ns | ||
| Pulse Width Distortion | PWD | 32 | 65 | ns | |||
| Propagation Delay Difference Between Any Two Parts | PDD | -90 | 90 | ns | |||
| Rise Time | tr | 30 | ns | ||||
| Fall Time | tf | 20 | ns | ||||
| UVLO Turn On Delay | tUVLO+ | 2.0 | s | IF= 10mA, VO> 5V | |||
| UVLO Turn Off Delay | tUVLO- | 0.3 | s | IF= 10mA, VO< 5V | |||
| Common Mode Transient Immunity at Logic High | CMH | 35 | 50 | kV/s | IF=10mA, VDD=30V,VCM=2.0kV | ||
| Common Mode Transient Immunity at Logic Low | CML | 35 | 50 | kV/s | VF=0V VDD=30V,VCM=2.0kV | ||
| Package Dimensions (Dimensions in mm unless otherwise stated) | |||||||
| Standard DIP Through Hole (DIP Type) | mm | ||||||
| Gullwing (400mil) | mm | ||||||
| Lead Forming Through Hole (M Type) | mm | ||||||
| Surface Mount Lead Forming (S Type) | mm | ||||||
| Surface Mount (Low Profile) Lead Forming (SL Type) | mm | ||||||
| Recommended Solder Mask (Dimensions in mm unless otherwise stated) | |||||||
| Surface Mount Lead Forming & Surface Mount (Low Profile) Lead Forming | mm | ||||||
| Surface Mount (Gullwing) Lead Forming | mm | ||||||
| Carrier Tape Specifications (Dimensions in mm unless otherwise stated) | |||||||
| Option S(T1) | mm | ||||||
| Option S(T2) | mm | ||||||
| Option SL(T1) | mm | ||||||
| Option SL(T2) | mm | ||||||
| Reel Specifications (Dimensions in mm unless otherwise stated) | |||||||
| Option S & SL | mm | ||||||
| Reflow Information | |||||||
| Profile Feature | Sn-Pb Assembly Profile | Pb-Free Assembly Profile | |||||
| Temperature Min. (Tsmin) | 100 | 150C | C | ||||
| Temperature Max. (Tsmax) | 150 | 200C | C | ||||
| Time (ts) from (Tsmin to Tsmax) | 60-120 seconds | 60-120 seconds | seconds | ||||
| Ramp-up Rate (tL to tP) | 3C/second max. | 3C/second max. | C/second | ||||
| Liquidous Temperature (TL) | 183C | 217C | C | ||||
| Time (tL) Maintained Above (TL) | 60 150 seconds | 60 150 seconds | seconds | ||||
| Peak Body Package Temperature | 235C +0C / -5C | 260C +0C / -5C | C | ||||
| Time (tP) within 5C of Peak Temp | 20 seconds | 30 seconds | seconds | ||||
| Ramp-down Rate (TP to TL) | 6C/second max | 6C/second max | C/second | ||||
| Time 25C to Peak Temperature | 6 minutes max. | 8 minutes max. | minutes | ||||
Notes:
1. 1s P.W, 300pps
2. Maximum pulse width = 10s.
3. AC For 1 Minute, R.H. = 40 ~ 60%.
4. For 10 seconds.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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