| Power Dissipation | 745mW |
| Operating Temperature | -40℃~+105℃ |
| Isolation voltage(Vrms) | 5kV |
| Propagation Delay(tpd) | 200ns;200ns |
| Reverse Voltage | 5V |
| Load Type | IGBT;MOSFET |
| Voltage - Supply | 15V~30V |
| Rise Time | 35ns |
| Fall Time | 35ns |
| Voltage - Forward(Vf) | 1.37V |
| CMTI(kV/us) | 35kV/us |
| Description | 5V 15V~30V 35ns 35ns 1.37V SO-6 Isolators - Gate Drivers RoHS |
| Mfr. Part # | LTV-341P-TA1-H |
| Package | SO-6 |
| Model Number | LTV-341P-TA1-H |
View Detail Information
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Product Specification
| Power Dissipation | 745mW | Operating Temperature | -40℃~+105℃ |
| Isolation voltage(Vrms) | 5kV | Propagation Delay(tpd) | 200ns;200ns |
| Reverse Voltage | 5V | Load Type | IGBT;MOSFET |
| Voltage - Supply | 15V~30V | Rise Time | 35ns |
| Fall Time | 35ns | Voltage - Forward(Vf) | 1.37V |
| CMTI(kV/us) | 35kV/us | Description | 5V 15V~30V 35ns 35ns 1.37V SO-6 Isolators - Gate Drivers RoHS |
| Mfr. Part # | LTV-341P-TA1-H | Package | SO-6 |
| Model Number | LTV-341P-TA1-H |
The LTV-341 series Photocoupler is designed for driving power IGBTs and MOSFETs in motor control inverter applications and power supply inverters. It features an AlGaAs LED coupled to an integrated circuit with a power output stage, capable of directly driving IGBTs up to 1200 V/200 A with a 2.5A peak output current. For higher-rated IGBTs, it can drive a discrete power stage. The device operates reliably within a temperature range of -40C to +105C.
| Parameter | Symbol | LTV-341P | LTV-341W | Unit | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|---|
| ELECTRICAL OPTICAL CHARACTERISTICS | ||||||||
| Input Forward Voltage | VF | V | IF = 10mA | 1.2 | 1.37 | 1.8 | ||
| Input Forward Voltage Temperature Coefficient | VF/ T | mV/OC | IF = 10mA | -1.237 | ||||
| Input Reverse Voltage | BVR | V | IR = 10A | 5 | ||||
| Input Threshold Current (Low to High) | IFLH | mA | VCC = 30 V, VO > 5V | 1.8 | 5 | |||
| Input Threshold Voltage (High to Low) | VFHL | V | VCC = 30 V, VO < 5V | 0.8 | ||||
| Input Capacitance | CIN | pF | f = 1 MHz, VF = 0 V | 33 | ||||
| Output High Level Supply Current | ICCH | mA | IF = 10 mA, VCC = 30V, VO = Open | 2.4 | 3.5 | |||
| Output Low Level Supply Current | ICCL | mA | IF = 0 mA, VCC = 30V, VO = Open | 2.5 | 3.5 | |||
| High level output current | IOH | -1.0 | -3.0 | A | VO = (VCC 1.5 V) | |||
| Low level output current | IOL | 1.0 | 3.0 | A | VO = (VEE + 1.5 V) | |||
| High level output voltage | VOH | V | IF = 10mA, IO = -100mA | VCC - 0.3 | VCC - 0.1 | |||
| Low level output voltage | VOL | V | IF = 0mA, IO = 100mA | VEE + 0.1 | VEE + 0.25 | |||
| UVLO Threshold + | VUVLO+ | V | VO > 5V, IF = 10 mA | 11.0 | 12.7 | 13.5 | ||
| UVLO Threshold - | VUVLO- | V | VO < 5V, IF = 10 mA | 9.5 | 11.2 | 12.0 | ||
| UVLO Hysteresis | UVLOHYS | V | 1.5 | |||||
| SWITCHING SPECIFICATION | ||||||||
| Propagation Delay Time to High Output Level | tPLH | ns | Rg = 10, Cg = 25nF, f = 10 kHz, Duty Cycle = 50% IF = 7 to 16 mA, VCC = 15 to 30V VEE = ground | 50 | 130 | 200 | ||
| Propagation Delay Time to Low Output Level | tPHL | ns | 50 | 130 | 200 | |||
| Pulse Width Distortion | PWD | ns | 5 | 70 | ||||
| Propagation delay difference between any two parts or channels | PDD | ns | -100 | 100 | ||||
| Output Rise Time (10 to 90%) | Tr | ns | 35 | 20 | ||||
| Output Fall Time (90 to 10%) | Tf | ns | 35 | |||||
| Common mode transient immunity at high level output | |CMH| | kV/s | TA = 25C, IF = 10 to 16 mA, VCM = 1500 V, VCC = 30 V | 35 | 50 | |||
| Common mode transient immunity at low level output | |CML| | kV/s | TA = 25C, VF = 0 V, VCM = 1500 V, VCC = 30 V | 35 | 50 | |||
| INSULATION AND SAFETY RELATED SPECIFICATION | ||||||||
| Climatic Classification | 55/100/21 | 55/100/21 | ||||||
| Pollution Degree (DIN VDE 0110/1.89) | 2 | 2 | ||||||
| Maximum Working Insulation Voltage | VIORM | 891 | 1140 | Vpeak | ||||
| Input to Output Test Voltage, Method b* | VPR | 1671 | 2137 | Vpeak | VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial discharge < 5 pC | |||
| Input to Output Test Voltage, Method a* | VPR | 1426 | 1824 | Vpeak | VIORM x 1.6 = VPR, Type and Sample Test, tm = 10 sec, Partial discharge < 5 pC | |||
| Highest Allowable Overvoltage (Transient Overvoltage tini = 60 sec) | VIOTM | 6000 | 8000 | Vpeak | ||||
| Case Temperature | TS | 175 | 175 | oC | ||||
| Input Current | IS, INPUT | 150 | 150 | mA | ||||
| Output Power | PS, OUTPUT | 600 | 600 | mW | ||||
| Insulation Resistance at TS, VIO = 500 V | RS | >109 | >109 | |||||
| Minimum External Air Gap (External Clearance) | L(101) | 7.0 | 8.0 | mm | Measured from input terminals to output terminals, shortest distance through air. | |||
| Minimum External Tracking (External Clearance) | L(102) | 8.0 | 8.0 | mm | Measured from input terminals to output terminals, shortest distance | |||
| Tracking Resistance (Comparative Tracking Index) | CTI | >175 | >175 | V | DIN EN 60112 (VDE 0303 Teil 11) | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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